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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD3NM50T4

Name: STD3NM50T4
Brand: STMicroelectronics
SKU: STD3NM50T4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD3NM50T4

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD3NM50T4.pdf

Description:: MOSFET N-CH 550V 3A DPAK

Quantity:: RFQ Add To RFQ list

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Inventory:6,367

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Product details

Overview

STD3NM50T4 from STMicroelectronics is an N-channel 550 V, 2.5 Ω (typ), 3 A Zener-protected MDmesh™MOSFET in DPAK (TO-252) package, designed for high-voltage flyback and resonant converters requiring robust avalanche capability and low gate charge. It delivers 130 mJ single-pulse avalanche energy and operates up to 150 °C junction temperature.

For engineers reviewing the STD3NM50T4 datasheet, STD3NM50T4 pinout, STD3NM50T4 application, or STD3NM50T4 equivalent, key selection criteria include R_DS(on) ≤ 3 Ω at V_GS = 10 V, 15 V/ns dv/dt rating, integrated gate-source Zener protection, and DPAK thermal resistance of 2.73 °C/W.

Technical Context

This MOSFET employs ST's MDmesh™M technology-combining Multiple Drain process with PowerMESH™ horizontal layout-to achieve low on-resistance while maintaining high voltage ruggedness. Its 500 V minimum breakdown voltage (V_(BR)DSS) and 1 A repetitive avalanche current (I_AR) support unclamped inductive switching in offline SMPS.

The device integrates back-to-back gate-source Zener diodes rated at ±30 V, enabling direct gate drive without external clamping. Low input capacitance (C_iss = 140 pF) and total gate charge (Q_g = 5.5 nC) reduce switching losses in high-frequency converters operating up to several hundred kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	550 V - supports 400 V AC mains-derived DC bus with margin for surge and ringing
R_DS(on) (max)	3 Ω @ V_GS = 10 V, T_C = 25 °C - enables <1.5 W conduction loss at 1.5 A continuous drain current
I_D (cont)	3 A @ T_C = 25 °C - suitable for <100 W primary-side switching in DPAK-mounted designs
E_AS	130 mJ - withstands unclamped inductive energy in flyback snubberless operation
Q_g	5.5 nC - reduces gate driver power demand and enables efficient 300–500 kHz switching
dv/dt (peak)	15 V/ns - ensures reliable operation during fast voltage transients in hard-switched topologies
R_thj-case	2.73 °C/W - allows ~16 W dissipation at ΔT = 46 °C case-to-junction rise

Pinout & Package

STD3NM50T4 is housed in a surface-mount DPAK (TO-252) package with exposed drain pad for thermal and electrical performance. The three-terminal configuration supports standard PCB layout practices for high-voltage power stages.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Power return path for drain current	Low-inductance connection point for source loop; tied to ground plane in flyback primary
2 (Gate)	Control terminal for channel conduction	High-impedance input requiring <5.5 nC charge; protected by integrated ±30 V Zener
3 (Drain)	Main high-voltage power output node	Exposed copper pad on bottom side; electrically and thermally connected to PCB copper pour

Key Features

Feature	Design Value
Zener-protected gate	Integrated back-to-back Zener diodes clamp V_GS to ±30 V, eliminating need for external TVS in most gate-drive circuits
MDmesh™M technology	Combines low R_DS(on) (2.5 Ω typ) with high V_DSS (550 V) via optimized cell pitch and trench geometry
Enhanced ESD rating	4 kV HBM (Human Body Model) ensures robust handling during SMT assembly and board-level testing
Low Crss	4 pF reverse transfer capacitance minimizes Miller effect, improving turn-off controllability in high-dv/dt environments

Applications

AC-DC Adapter Primary Switch

Flyback Converter Main Switch

Use Scenario: 36–75 W universal-input offline adapter powering consumer electronics.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer into transformer during ON-time.

Use Value: 130 mJ E_AS safely absorbs leakage inductance spikes without snubber, reducing BOM count and board area.

Use Scenario: Isolated 12 V/3 A output for industrial control power supply.

IC Role / Device Role / Timing Role: Main switching element in discontinuous conduction mode (DCM) flyback topology.

Use Value: 5.5 nC Q_g enables efficient 350 kHz operation, increasing power density while maintaining <1% gate loss.

LED Driver High-Voltage Switch

Industrial SMPS Input Stage

Use Scenario: Constant-current LED driver for street lighting using 400 V DC bus.

IC Role / Device Role / Timing Role: High-side switch in buck-boost or SEPIC-derived constant-power stage.

Use Value: 15 V/ns dv/dt rating prevents false turn-on during bus transients, ensuring stable dimming control.

Use Scenario: 60 W auxiliary power supply in PLC or motor drive system.

IC Role / Device Role / Timing Role: Primary switch in quasi-resonant (QR) flyback with valley switching.

Use Value: Tight R_DS(on) distribution (2.5–3 Ω) ensures consistent efficiency across production lots and temperature range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP3NK50ZFP	500 V V_DSS, 3.3 Ω R_DS(on), TO-220FP package, no integrated Zener	Requires external gate protection; higher R_thj-amb (62.5 °C/W vs. 2.73 °C/W case)	Preferred where through-hole mounting and higher peak power (>60 W) are required
IPP60R190C6	600 V V_DSS, 0.19 Ω R_DS(on), TO-220, CoolMOS™ C6, no Zener	Lower conduction loss but needs discrete gate clamp; higher cost and larger footprint	Selected when >100 W output and <0.5 Ω R_DS(on) are mandatory, with gate-driver redesign

Compared with STP3NK50ZFP and IPP60R190C6, STD3NM50T4 offers optimal balance of ruggedness, integrated protection, and DPAK thermal performance for compact 36–75 W offline converters-without requiring gate-clamp components or sacrificing manufacturability.

Availability

STD3NM50T4 is available at Aetrix Electronics and suitable for AC-DC adapters, flyback converters, LED drivers, and industrial auxiliary power supplies requiring stable component supply and long-term sourcing continuity.

Supply support for STD3NM50T4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, microcontrollers, and automotive ICs.

STD3NM50T4 belongs to the MDmesh™M series-a family of high-voltage superjunction MOSFETs engineered for high-efficiency, high-power-density offline SMPS in consumer, industrial, and lighting applications.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STD3NM50T4 supports 1.89 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the DPAK package and ensures safe operation within SOA boundaries under sustained load conditions.

Does STD3NM50T4 require external gate protection?

No. The device integrates back-to-back Zener diodes between gate and source with ±30 V breakdown rating, providing inherent protection against overvoltage transients. External clamping is unnecessary unless gate drive exceeds ±30 V or involves unusually high-energy coupling.

Can STD3NM50T4 be used in zero-voltage switching (ZVS) topologies?

Yes-its low C_oss (40 pF) and Crss (4 pF), combined with 15 V/ns dv/dt capability, support reliable ZVS operation in resonant LLC or phase-shifted full-bridge designs up to 300 kHz, provided gate timing accounts for its 7 ns t_d(on) and 8 ns t_r(Voff).

What is the recommended PCB layout for thermal performance?

Maximize copper area under the exposed drain pad (Pin 3) using multiple thermal vias to inner ground planes. Maintain ≥1.5 mm creepage/clearance to other traces per IEC 62368-1. Route gate traces short and away from drain paths to minimize coupling; use 10–22 Ω gate resistor for controlled turn-on/turn-off.

STD3NM50T4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 550 V

Current - Continuous Drain (Id) @ 25°C:: 3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 5.5 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 140 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 46W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD3NM50T4 FAQ

1.How can I place an order for STD3NM50T4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD3NM50T4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD3NM50T4 reliable?

The price and inventory of STD3NM50T4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD3NM50T4 is usually 5 days.

3.What payment methods are accepted for STD3NM50T4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD3NM50T4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD3NM50T4?

STD3NM50T4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD3NM50T4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD3NM50T4?

For technical support, including STD3NM50T4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD3NM50T4 requirements.

6.How does Aetrix verify that STD3NM50T4 is sourced from the original manufacturer or authorized distributors?

All STD3NM50T4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD3NM50T4 meets industry standards.

7.What is the process for return or replacement of STD3NM50T4?

All STD3NM50T4 units undergo pre-shipment inspection (PSI). If there is an issue with STD3NM50T4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD3NM50T4 part is unused and in its original packaging.

Return procedure for STD3NM50T4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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