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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD40N2LH5

Name: STD40N2LH5
Brand: STMicroelectronics
SKU: STD40N2LH5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD40N2LH5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD40N2LH5.pdf

Description:: MOSFET N-CH 25V 40A DPAK

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Product details

Overview

STD40N2LH5 from STMicroelectronics is an N-channel 25 V, 40 A DPAK Power MOSFET with R_DS(on) = 0.0118 Ω (V_GS = 10 V, I_D = 20 A), Q_g = 6.3 nC, and high avalanche ruggedness (E_AS = 110 mJ). It delivers low conduction and switching losses in DC-DC converters, motor drivers, and load switches operating at ≤25 V rail voltages.

For engineers reviewing the STD40N2LH5 datasheet, STD40N2LH5 pinout, STD40N2LH5 application, or STD40N2LH5 equivalent, this device is selected for high-current, low-voltage switching where gate drive efficiency, thermal robustness, and avalanche energy handling are critical design constraints.

Technical Context

This STripFET™ V MOSFET uses trench-gate technology to achieve ultra-low R_DS(on) while maintaining fast switching (t_d(on) = 4.8 ns, t_f = 3.5 ns) and low gate charge (Q_g = 6.3 nC, Q_gd = 2.7 nC). Its SOA is rated for 40 A continuous at T_C = 25 °C and derates linearly to 28 A at T_C = 100 °C.

The device integrates a robust body diode with t_rr = 17.6 ns and Q_rr = 9.2 nC under I_SD = 40 A, dI/dt = 100 A/µs conditions, enabling reliable synchronous rectification and inductive load control without external freewheeling diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum drain-source blocking voltage; suitable for 12–24 V system rails with margin against transients.
R_DS(on)	0.0118 Ω @ V_GS = 10 V, I_D = 20 A - Enables <1 W conduction loss at 40 A, reducing heatsink requirements.
I_D (cont)	40 A @ T_C = 25 °C - Supports high-current loads such as BLDC motor phases or battery protection FETs.
Q_g	6.3 nC - Low gate charge reduces driver power loss and enables efficient operation at >500 kHz switching frequencies.
E_AS	110 mJ - Confirmed single-pulse avalanche energy at T_j = 25 °C, ID = 24 A, V_DD = 12 V; enhances reliability in inductive switching.
R_thj-case	4.3 °C/W - Junction-to-case thermal resistance enables direct mounting to heatsinks for sustained 35 W dissipation.

Pinout & Package

DPAK (TO-252) package with exposed drain pad for thermal and electrical connection; 3-terminal surface-mount configuration optimized for PCB heat spreading and low-inductance layout.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Source terminal (S)	Low-side return path; connects to ground or current-sense resistor; electrically tied to source metallization.
2 (Gate)	Control input (G)	High-impedance MOSFET gate; requires 10 V for full enhancement; driven via series resistor (e.g., 4.7 Ω) to damp ringing.
3 (Drain)	Power output (D)	Exposed copper pad on bottom surface; primary current path and thermal interface; must be soldered to large copper pour.

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g figure of merit	0.074 nΩ·F - Industry benchmark for 25 V MOSFETs, minimizing combined conduction and switching loss.
High avalanche ruggedness	110 mJ single-pulse E_AS - Eliminates need for external clamping in flyback or H-bridge inductive switching.
Low gate drive power requirement	Q_g = 6.3 nC at V_GS = 10 V - Reduces driver IC stress and allows use of low-power gate drivers (e.g., STSPIN family).
Robust body diode	t_rr = 17.6 ns, Q_rr = 9.2 nC - Enables efficient synchronous rectification in buck converters without reverse recovery spikes.

Applications

DC-DC Buck Converter

Automotive Load Switch

Use Scenario: High-efficiency 12 V → 3.3 V/5 V point-of-load conversion in infotainment systems.

IC Role / Device Role: Synchronous high-side switch with integrated body diode used as low-side rectifier.

Use Value: 0.0118 Ω R_DS(on) limits conduction loss to <0.5 W at 30 A, enabling compact thermally constrained designs.

Use Scenario: Smart battery disconnect in 12 V automotive subsystems (e.g., ADAS camera modules).

IC Role / Device Role: Low-side load switch controlling power delivery with overcurrent and short-circuit protection.

Use Value: 110 mJ E_AS withstands inductive kickback during hot-plug events, eliminating external TVS diodes.

BLDC Motor Phase Driver

Industrial Solid-State Relay

Use Scenario: 3-phase inverter stage for 24 V brushless fans or pumps in HVAC equipment.

IC Role / Device Role: Low-side switching element in 6-FET half-bridge topology.

Use Value: 40 A continuous rating at T_C = 25 °C supports peak motor currents up to 160 A pulsed (IDM), matching typical BLDC surge demands.

Use Scenario: Replacement for electromechanical relays in programmable logic controller (PLC) output modules.

IC Role / Device Role: Solid-state switching element driving resistive/inductive loads up to 250 W.

Use Value: 4.3 °C/W R_thj-case enables direct heatsink mounting for stable 35 W operation without forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 25 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6242PBF	R_DS(on) = 0.0085 Ω @ 4.5 V, but Q_g = 10.5 nC; higher gate charge increases switching loss.	Better for low-V_GS drive (e.g., 3.3 V microcontrollers), less optimal for high-frequency PWM.	Select when gate drive voltage is limited to ≤4.5 V and switching frequency is <200 kHz.
DMN2020LFG-7	R_DS(on) = 0.0135 Ω @ 4.5 V, Q_g = 4.8 nC; lower gate charge but higher on-resistance than STD40N2LH5.	Optimized for 3.3 V/5 V logic-level drive with minimal gate drive power, not for 10 V gate bias.	Prefer for space-constrained designs requiring logic-level compatibility and moderate current (<30 A).

Compared with IRLHS6242PBF and DMN2020LFG-7, STD40N2LH5 offers the lowest R_DS(on) × Q_g product among 25 V DPAK MOSFETs, making it optimal for high-current, high-frequency 10 V gate-driven applications where thermal management and efficiency are prioritized.

Availability

STD40N2LH5 is available at Aetrix Electronics and suitable for DC-DC converters, automotive load switches, and BLDC motor drivers requiring stable component supply across industrial and transportation programs.

Supply support for STD40N2LH5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for industrial, automotive, and consumer markets.

STD40N2LH5 belongs to ST's STripFET™ V Power MOSFET product line, engineered specifically for high-efficiency, high-current switching in 12–24 V power systems where low R_DS(on), fast switching, and avalanche reliability are essential.

FAQ

What is the maximum continuous drain current for STD40N2LH5 at 100 °C case temperature?

The maximum continuous drain current is 28 A at T_C = 100 °C, per Table 2 of the official datasheet (Doc ID 14919 Rev 3). This derating reflects thermal limitations of the DPAK package and ensures safe junction temperature operation within the -55 to 175 °C range.

Does STD40N2LH5 support logic-level gate drive?

No - STD40N2LH5 is specified for full enhancement at V_GS = 10 V, with V_GS(th) = 1 V (min). While it conducts at 4.5 V, R_DS(on) rises to 0.0155 Ω (typ), increasing conduction loss significantly; it is not classified as a logic-level MOSFET.

What is the safe operating area (SOA) limitation at DC operation?

At DC, the SOA is bounded by R_DS(on) and package thermal resistance. With R_DS(on) = 0.0118 Ω and R_thj-case = 4.3 °C/W, the device sustains 40 A continuously only if case temperature remains ≤25 °C; above that, current must be reduced per the 0.23 W/°C derating factor.

Is STD40N2LH5 RoHS-compliant and halogen-free?

Yes - STD40N2LH5 is offered in ECOPACK®-compliant DPAK packaging, meeting RoHS Directive 2011/65/EU and halogen-free requirements per ST's environmental specifications, as confirmed in Section 4 of the datasheet (Doc ID 14919 Rev 3).

STD40N2LH5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ V

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 11.8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 6.3 nC @ 5 V

Vgs (Max):: ±22V

Input Capacitance (Ciss) (Max) @ Vds:: 700 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 35W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD40N2LH5 FAQ

1.How can I place an order for STD40N2LH5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD40N2LH5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD40N2LH5 reliable?

The price and inventory of STD40N2LH5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD40N2LH5 is usually 5 days.

3.What payment methods are accepted for STD40N2LH5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD40N2LH5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD40N2LH5?

STD40N2LH5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD40N2LH5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD40N2LH5?

For technical support, including STD40N2LH5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD40N2LH5 requirements.

6.How does Aetrix verify that STD40N2LH5 is sourced from the original manufacturer or authorized distributors?

All STD40N2LH5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD40N2LH5 meets industry standards.

7.What is the process for return or replacement of STD40N2LH5?

All STD40N2LH5 units undergo pre-shipment inspection (PSI). If there is an issue with STD40N2LH5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD40N2LH5 part is unused and in its original packaging.

Return procedure for STD40N2LH5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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