STMicroelectronics STD47N10F7AG

Overview

STD47N10F7AG from STMicroelectronics is an automotive-grade N-channel enhancement-mode power MOSFET using STripFET™ F7 trench technology, rated for 100 V drain-source voltage, 12.5 mΩ typical R_DS(on) at V_GS = 10 V, and 45 A continuous drain current at T_C = 25 °C. It delivers high avalanche ruggedness and low Cr_ss/C_iss ratio for EMI immunity in high-frequency switching power supplies.

For engineers reviewing the STD47N10F7AG datasheet, STD47N10F7AG pinout, STD47N10F7AG application, or STD47N10F7AG equivalent, key selection criteria include its AEC-Q101 qualification, 2.5 °C/W junction-to-case thermal resistance, 25 nC total gate charge, and DPAK (TO-252) package suitability for thermally demanding motor control and DC-DC converter designs.

Technical Context

This MOSFET employs an enhanced trench-gate structure that reduces both on-resistance and internal capacitances-C_iss = 1640 pF typ., C_oss = 360 pF typ., Cr_ss = 25 pF typ.-enabling fast switching with t_d(on) = 15 ns and t_f = 8 ns under standard test conditions. Its low R_DS(on) × Q_g figure of merit improves efficiency in hard-switched topologies.

The integrated source-drain diode supports synchronous rectification and inductive load handling, with V_SD = 1.1 V at I_SD = 45 A and t_rr = 53 ns at di/dt = 100 A/µs. Junction temperature range spans –55 to +175 °C, supporting under-hood automotive environments.

Key Specifications

Pinout & Package

STD47N10F7AG is housed in a DPAK (TO-252) type A2 package with exposed drain tab for thermal and electrical connection. The package features gull-wing leads, surface-mount compatibility, and a recommended footprint per Figure 20 (DocID027183 Rev 3, p.12).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Compared with IRF540NPBF and IXTH50N10L2, STD47N10F7AG uniquely combines AEC-Q101 compliance, DPAK form factor, and best-in-class FoM (R_DS(on) × Q_g) for space- and reliability-constrained automotive and industrial power stages.

Availability

STD47N10F7AG is available at Aetrix Electronics and suitable for automotive body control modules, industrial 48 V DC-DC converters, onboard chargers, and motor drive half-bridges requiring stable component supply across multi-year production cycles.

Supply support for STD47N10F7AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

STD47N10F7AG belongs to ST's STripFET™ F7 power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in automotive and industrial power conversion where thermal density, EMI robustness, and qualification rigor are critical.

FAQ

Is STD47N10F7AG suitable for 48 V battery system applications?

Yes. With 100 V V_DS, 45 A continuous current, and AEC-Q101 qualification, it supports 48 V nominal systems including transient overvoltage events up to 80 V. Its 12.5 mΩ R_DS(on) keeps conduction losses below 2.5 W at 45 A, making it ideal for high-current battery disconnect switches and DC-DC pre-regulators.

What is the maximum gate-source voltage rating?

The absolute maximum V_GS is ±20 V. Operation beyond this risks irreversible gate oxide damage. For reliable 3.3 V or 5 V logic-level drive, a gate resistor (e.g., 10 Ω) and optional Zener clamp (e.g., 12 V) are recommended to limit overshoot during fast switching transitions.

Does STD47N10F7AG have an integrated body diode?

Yes. It features a monolithic source-drain diode with 45 A continuous forward current rating, 1.1 V forward voltage at 45 A, and 53 ns reverse recovery time. This enables freewheeling in inductive loads and simplifies half-bridge designs without external diodes.

Can STD47N10F7AG be used in parallel configurations?

Yes, but with careful layout. Its positive temperature coefficient of R_DS(on) promotes current sharing. Use matched gate resistors, symmetrical PCB traces, and shared thermal pad to minimize imbalance. Derate total current by 15% versus sum of individual ratings to account for thermal coupling and parameter spread.