STMicroelectronics STD4LN80K5

Overview

STD4LN80K5 from STMicroelectronics is an N-channel 800 V, 2.1 Ω typ. R_DS(on), 3 A MDmesh™ K5 Power MOSFET in DPAK (TO-252) package, designed for high-voltage switching in offline SMPS, PFC stages, and industrial AC-DC converters.

For engineers reviewing the STD4LN80K5 datasheet, STD4LN80K5 pinout, STD4LN80K5 application, or STD4LN80K5 equivalent, key selection criteria include 800 V V_DS, ultra-low 3.7 nC Q_g, Zener-protected gate, 100% avalanche tested ruggedness, and DPAK thermal performance with R_thj-case = 2.08 °C/W.

Technical Context

This device employs ST's proprietary MDmesh™ K5 vertical superjunction structure to achieve industry-leading R_DS(on) × area and FoM, enabling high power density in compact layouts. Its 15 V/ns diode recovery dv/dt rating and 50 V/ns MOSFET dv/dt ruggedness support reliable operation in hard-switched topologies.

The integrated back-to-back gate-source Zener diodes (V_(BR)GSO = 30 V) provide ESD protection without external components, while the 1.6 V source-drain forward voltage at 2.5 A supports efficient synchronous rectification or freewheeling in flyback and LLC resonant converters.

Key Specifications

Pinout & Package

DPAK (TO-252) package: surface-mount, single-die layout with exposed drain pad for thermal enhancement and mechanical stability. Standard three-terminal configuration optimized for high-current, high-voltage switching.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP4NK80ZFP and FQP8N80C, STD4LN80K5 delivers superior power density via 2.1 Ω R_DS(on) and DPAK thermal performance, while its integrated Zener and 100% avalanche test ensure reliability in unregulated industrial environments without added BOM cost.

Availability

STD4LN80K5 is available at Aetrix Electronics and suitable for industrial AC-DC adapters, server PSU PFC stages, and LED streetlight drivers requiring stable component supply and long-term production continuity.

Supply support for STD4LN80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

STD4LN80K5 belongs to ST's MDmesh™ K5 high-voltage MOSFET product line, engineered specifically for high-efficiency, high-power-density offline power conversion where low R_DS(on), low Q_g, and rugged avalanche capability are mandatory.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STD4LN80K5 supports 1.9 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This value reflects thermal derating due to junction-to-case resistance (2.08 °C/W) and safe operating area limits - not ambient temperature alone. Designers must verify PCB copper area and airflow to sustain this rating in final layout.

Does the built-in Zener protection cover both positive and negative gate transients?

Yes - the device integrates back-to-back gate-source Zener diodes with ±30 V breakdown voltage (V_(BR)GSO), providing symmetrical clamping for both positive overvoltage and negative undershoot events. This eliminates external bidirectional TVS requirements in most industrial switching circuits, though layout inductance must still be minimized to avoid overshoot beyond 30 V.

Can STD4LN80K5 replace STD3NK80Z in an existing design?

Direct replacement is possible only with layout review: STD4LN80K5 offers lower R_DS(on) (2.1 Ω vs 3.5 Ω) and higher V_DS rating (800 V vs 800 V), but its DPAK footprint differs from STD3NK80Z's TO-92. Thermal and gate drive behavior improve, yet PCB rework is required for pad geometry and thermal relief. No electrical compatibility issues exist if gate resistor and snubber values are retained.

What is the significance of the 230 ns reverse recovery time (t_rr) at 25 °C?

The 230 ns t_rr (measured at T_j = 25 °C, I_SD = 2.5 A, di/dt = 100 A/µs) quantifies how quickly the body diode recovers after conduction - critical for synchronous rectification and zero-voltage switching. At 150 °C, t_rr increases to 368 ns, so designs operating near thermal limits must adjust dead-time to prevent shoot-through in half-bridge configurations.