STMicroelectronics STD4N62K3

Overview

STD4N62K3 from STMicroelectronics is an N-channel 620 V, 2.0 Ω (max) MDmesh K3 Power MOSFET in DPAK (TO-252) package, rated for 3.8 A continuous drain current at TC = 25 °C and 115 mJ single-pulse avalanche energy. It features 12 V/ns peak diode recovery dv/dt capability, 7 pF reverse transfer capacitance, and Zener-protected gate, making it suitable for high-voltage flyback and resonant SMPS primary-side switching.

For engineers reviewing the STD4N62K3 datasheet, STD4N62K3 pinout, STD4N62K3 application, or STD4N62K3 equivalent, key selection criteria include its 1.79 °C/W junction-to-case thermal resistance, 22 nC total gate charge, improved diode reverse recovery (trr = 220 ns @ TJ = 25 °C), and 100% avalanche-tested ruggedness for reliable operation in unclamped inductive load conditions.

Technical Context

This device employs ST's optimized vertical MDmesh K3 structure to achieve ultra-low RDS(on) × area trade-off while maintaining high voltage blocking. Its dynamic performance is defined by low Crss (7 pF) and Coss eq. (27 pF), enabling fast, low-loss switching in hard- and soft-switching topologies.

The integrated Zener-protected gate ensures ±30 V VGS rating and 2.5 kV HBM ESD robustness. Diode recovery characteristics are enhanced via controlled carrier lifetime, delivering 1.4 µC Qrr and 13 A IRRM under standard 100 A/µs di/dt test conditions - critical for reducing snubber losses in PFC and LLC stages.

Key Specifications

Pinout & Package

DPAK (TO-252) package with exposed drain tab for low thermal resistance (RthJC = 1.79 °C/W) and mechanical mounting compatibility with industry-standard PCB footprints.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP4N62K3, STD4N62K3 delivers superior thermal performance and compact layout via DPAK; versus FQP4N60, it provides 20 V higher breakdown, 0.5 Ω lower RDS(on), and certified avalanche ruggedness - essential for mission-critical power conversion.

Availability

STD4N62K3 is available at Aetrix Electronics and suitable for AC-DC adapters, industrial LED drivers, server PSUs, and EV onboard chargers requiring stable component supply across multi-year production cycles.

Supply support for STD4N62K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, and analog/mixed-signal ICs for industrial, automotive, and consumer markets.

STD4N62K3 belongs to the MDmesh K3 high-voltage MOSFET product line, engineered specifically for high-efficiency, high-reliability switched-mode power supplies operating above 400 V DC input.

FAQ

What is the maximum safe operating temperature for STD4N62K3?

The absolute maximum junction temperature (TJ) is 150 °C, and the storage temperature range is –55 °C to +150 °C. Derating begins at TC = 100 °C, where continuous drain current drops to 2 A. Thermal design must maintain TJ ≤ 150 °C under worst-case ambient and power dissipation conditions, using the specified RthJC = 1.79 °C/W value with proper heatsinking.

Does STD4N62K3 require external gate protection?

No - STD4N62K3 integrates a Zener diode between gate and source, clamping VGS to ±20 V under transient overvoltage. This eliminates the need for external gate protection components in most designs, provided gate drive circuitry respects the ±30 V absolute maximum rating and limits peak current to avoid bond wire damage.

How does the body diode performance compare to standard MOSFETs?

STD4N62K3 features improved body diode reverse recovery: trr = 220 ns (TJ = 25 °C), Qrr = 1.4 µC, and IRRM = 13 A under standardized 100 A/µs di/dt conditions. These values are 30–40% better than prior-generation MDmesh K2 devices, reducing commutation loss and EMI in PFC and resonant topologies.

Can STD4N62K3 be used in synchronous rectification?

No - STD4N62K3 is an N-channel high-side switch intended for primary-side high-voltage switching, not low-side synchronous rectification. Its 620 V VDS rating, 2.0 Ω RDS(on), and body diode characteristics are optimized for hard-switched or resonant high-voltage applications, not for secondary-side 12–48 V rectification where low RDS(on) and fast diode recovery are prioritized.