STMicroelectronics STD4N80K5

Overview

STD4N80K5 from STMicroelectronics is an N-channel 800 V, 2.5 Ω (max) MDmesh K5 Power MOSFET in DPAK package, rated for 3 A continuous drain current at 25 °C and 100% avalanche tested. It delivers ultra-low gate charge (10.5 nC), 74.5 mJ single-pulse avalanche energy, and 4.5 V/ns diode recovery dv/dt ruggedness for high-voltage flyback and PFC stages.

For engineers reviewing the STD4N80K5 datasheet, STD4N80K5 pinout, STD4N80K5 application, or STD4N80K5 equivalent, key selection criteria include R_DS(on) × area efficiency, Zener-protected gate robustness, 2.08 °C/W junction-to-case thermal resistance, and DPAK-compatible layout for industrial SMPS designs.

Technical Context

This device implements ST's MDmesh K5 vertical superjunction architecture to achieve industry-leading figure of merit (R_DS(on) × Q_g = 26.3 Ω·nC) and low C_iss (175 pF) at 100 V. Its Zener-protected gate enables ±30 V V_GS tolerance without external clamping.

The integrated body diode features 242 ns reverse recovery time (T_J = 25 °C) and 1.42 µC Q_rr, with guaranteed 12 A pulsed source-drain current and 50 V/ns MOSFET dv/dt ruggedness under V_DS ≤ 640 V conditions.

Key Specifications

Pinout & Package

DPAK (TO-252) package with exposed drain tab for thermal and electrical connection; 3-terminal surface-mount outline measuring 6.20 mm × 6.60 mm × 1.50 mm (L × W × H), ECOPACK® compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP4N80K5 and FQP4N80, STD4N80K5 delivers superior power density via DPAK thermal performance, eliminates external protection components due to integrated Zener gate, and guarantees avalanche survival - making it optimal for compact, high-reliability industrial SMPS.

Availability

STD4N80K5 is available at Aetrix Electronics and suitable for industrial flyback converters, AC-DC PFC boost stages, and high-voltage LED driver power stages requiring stable component supply and long-term lifecycle support.

Supply support for STD4N80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STD4N80K5 belongs to the MDmesh K5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-power-density offline SMPS and industrial power conversion where R_DS(on) × Q_g FoM and avalanche ruggedness are critical.

FAQ

What is the maximum continuous drain current for STD4N80K5 at 100 °C case temperature?

The maximum continuous drain current is 1.7 A at T_C = 100 °C, as specified in Table 1 of DS14549. This derating reflects thermal limitations of the DPAK package and must be applied in thermal design calculations when ambient temperature exceeds 50 °C or airflow is restricted.

Does STD4N80K5 require external gate protection?

No - STD4N80K5 integrates Zener protection on the gate terminal, rated for ±30 V V_GS. This eliminates the need for external gate-clamp diodes in typical 10–15 V gate-drive configurations, reducing BOM count and PCB area in industrial power supplies.

How does the 50 V/ns dv/dt ruggedness specification apply in practice?

This rating means the device remains immune to spurious turn-on when subjected to voltage transients up to 50 V/ns across drain-source, provided V_DS ≤ 640 V. It is validated per test condition 3 in Table 1 and enables reliable operation in noisy industrial environments without additional gate resistors or RC snubbers.

Can STD4N80K5 replace older STD3NK80Z or STP3NK80Z in existing designs?

Yes - STD4N80K5 offers lower R_DS(on) (2.5 Ω vs 3.5 Ω), lower Q_g (10.5 nC vs 18 nC), and enhanced avalanche rating (74.5 mJ vs 45 mJ). Pin-compatible in DPAK, it improves efficiency and thermal margin but requires verification of gate-drive strength due to reduced Miller plateau voltage.