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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD4N90K5

Name: STD4N90K5
Brand: STMicroelectronics
SKU: STD4N90K5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD4N90K5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD4N90K5.pdf

Description:: MOSFET N-CH 900V 3A DPAK

Quantity:: RFQ Add To RFQ list

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Inventory:4,299

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Product details

Overview

STD4N90K5 from STMicroelectronics is a high-voltage N-channel Power MOSFET using MDmesh™ K5 vertical structure, rated for 900 V V(BR)DSS, 1.90 Ω typ. RDS(on) at VGS = 10 V and ID = 1.5 A, with 5.3 nC total gate charge and 100% avalanche tested. It operates in switching power supplies, PFC stages, and industrial inverters requiring high efficiency and ruggedness.

For engineers reviewing the STD4N90K5 datasheet, STD4N90K5 pinout, STD4N90K5 application, or STD4N90K5 equivalent, key selection criteria include its ultra-low gate charge (5.3 nC), Zener-protected gate (±30 V rating), 900 V breakdown voltage, and DPAK thermal resistance of 50 °C/W on FR-4 PCB.

Technical Context

This device implements ST's MDmesh™ K5 proprietary vertical superjunction architecture to minimize conduction and switching losses simultaneously. Its 173 pF input capacitance (Ciss), 29 pF time-related output capacitance (Co(tr)), and 2.8 nC gate-drain charge (Qgd) enable fast, low-loss hard-switching up to 100 kHz in offline SMPS.

The integrated back-to-back gate-source Zener diodes provide ±30 V clamping without external components, while the 160 mJ single-pulse avalanche energy (EAS) and 1 A repetitive avalanche current (IAR) support unclamped inductive turn-off robustness in flyback and resonant topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V(BR)DSS	900 V - supports direct rectified mains input in universal AC-DC converters up to 380 VAC.
RDS(on) typ.	1.90 Ω @ VGS = 10 V, ID = 1.5 A - enables low conduction loss in 3 A continuous switching applications.
Qg	5.3 nC - reduces driver power requirement and switching transition time in high-frequency designs.
EAS	160 mJ @ Tj = 25 °C - ensures reliable operation during unclamped inductive switching events.
Rthj-pcb	50 °C/W on 1 in² FR-4, 2 oz Cu - allows 60 W dissipation with ≤30 °C rise above PCB temperature.
VSD	1.5 V @ ISD = 3 A - defines forward drop of integrated body diode used in synchronous rectification or freewheeling.

Pinout & Package

The STD4N90K5 is housed in a DPAK (TO-252) surface-mount package with three terminals: drain (tab), source (pin 1), and gate (pin 2). The exposed drain pad provides low-inductance, high-current path and primary thermal conduction to the PCB.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying terminal, electrically connected to package heat slug	Serves as high-side switch node and primary thermal interface; requires soldered copper area for thermal management.
Source (Pin 1)	Reference node for gate drive and current return path	Connects to power ground or low-side switch node; carries full load current and must minimize trace inductance.
Gate (Pin 2)	Control terminal for channel modulation	Requires low-impedance drive due to 15.5 Ω intrinsic gate resistance; protected by integrated ±30 V Zener diodes.

Key Features

Feature	Design Value
MDmesh™ K5 vertical structure	Reduces RDS(on) × area by >40% vs prior-generation superjunction MOSFETs, enabling higher power density.
Ultra-low Qg (5.3 nC)	Lowers gate drive loss and enables use with low-power drivers in space-constrained 3 A systems.
Zener-protected gate	Integrated ±30 V gate-source clamping eliminates need for external TVS, reducing BOM count and layout area.
100% avalanche tested	Guarantees single-pulse ruggedness to 160 mJ and repetitive capability to 1 A, critical for PFC and flyback reliability.

Applications

Industrial Motor Drives

Server PSU Primary Switch

Use Scenario: Half-bridge IGBT gate driver auxiliary supply with 380 VDC bus.

IC Role / Device Role / Timing Role: High-side N-channel switch in isolated DC-DC converter operating at 65 kHz.

Use Value: 900 V rating withstands reflected transients; 1.90 Ω RDS(on) limits conduction loss to <1.7 W at 3 A.

Use Scenario: Active clamp forward converter primary switch in 1 kW telecom PSU.

IC Role / Device Role / Timing Role: Main power switch handling 400 VDC input with 5.3 nC Qg enabling efficient 100 kHz operation.

Use Value: Low Co(tr) (29 pF) minimizes capacitive turn-on loss; 50 °C/W Rthj-pcb sustains 60 W dissipation on standard PCB.

LED Streetlight Driver

EV Charger PFC Stage

Use Scenario: Buck-boost LED driver for outdoor lighting with 277 VAC input.

IC Role / Device Role / Timing Role: Switching element in continuous conduction mode (CCM) PFC pre-regulator.

Use Value: 160 mJ EAS handles line surges; Zener protection avoids gate overstress during EMI-induced spikes.

Use Scenario: Boost PFC stage in 7.4 kW AC/DC onboard charger for electric vehicles.

IC Role / Device Role / Timing Role: High-voltage switch in interleaved boost topology operating at 50–70 kHz.

Use Value: 900 V V(BR)DSS accommodates 600 VDC bus + 30% margin; 1.90 Ω RDS(on) maintains >98% efficiency at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP4NK90Z	900 V, 2.2 Ω max RDS(on), 6.5 nC Qg, TO-220 package	Higher thermal resistance (62.5 °C/W junction-to-ambient), through-hole mounting	Prefer when board-level heat sinking is impractical and manual assembly is acceptable.
IXTP4N90P	900 V, 2.0 Ω max RDS(on), 7.0 nC Qg, TO-220FP package	No integrated Zener protection; lower avalanche rating (100 mJ EAS)	Select only if external gate protection is already implemented and cost sensitivity outweighs ruggedness needs.

Compared with STP4NK90Z and IXTP4N90P, the STD4N90K5 delivers superior power density via DPAK packaging, lowest gate charge (5.3 nC), and guaranteed Zener protection-making it optimal for compact, high-reliability 3 A switching applications where PCB area and surge immunity are critical.

Availability

STD4N90K5 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, LED streetlight drivers, and EV charger PFC stages requiring stable component supply and long-term manufacturing continuity.

Supply support for STD4N90K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

The STD4N90K5 belongs to ST's MDmesh™ K5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-power-density offline SMPS, PFC, and industrial switching applications demanding 800–1000 V blocking capability.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STD4N90K5 supports 1.9 A continuous drain current at TC = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limitations of the DPAK package under sustained high-temperature operation and must be validated against actual PCB layout and airflow conditions.

Does the STD4N90K5 require an external gate resistor for safe operation?

A gate resistor is required to control dv/dt and suppress oscillation, but no minimum value is mandated. Typical designs use 4.7 Ω (per Figure 14 test circuit) to achieve 10.5 ns turn-on delay and 26.4 ns turn-off delay. Lower values increase switching speed but risk ringing; higher values reduce EMI at the cost of increased switching loss.

Can the built-in body diode be used for synchronous rectification?

No-the body diode has 1.5 V forward voltage at 3 A and 289 ns reverse recovery time at 25 °C, making it unsuitable for synchronous rectification. It is designed for freewheeling and clamping only. External Schottky or MOSFET-based synchronous rectifiers are required for high-efficiency secondary-side conversion.

Is the STD4N90K5 compliant with RoHS and REACH regulations?

Yes-STD4N90K5 is manufactured in ST's ECOPACK®-compliant DPAK package, meeting RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. Full compliance documentation, including substance declarations and material content reports, is available via ST's official product page and quality portal.

STD4N90K5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 900 V

Current - Continuous Drain (Id) @ 25°C:: 3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.1Ohm @ 1A, 10V

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 5.3 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 173 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 60W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD4N90K5 FAQ

1.How can I place an order for STD4N90K5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD4N90K5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD4N90K5 reliable?

The price and inventory of STD4N90K5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD4N90K5 is usually 5 days.

3.What payment methods are accepted for STD4N90K5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD4N90K5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD4N90K5?

STD4N90K5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD4N90K5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD4N90K5?

For technical support, including STD4N90K5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD4N90K5 requirements.

6.How does Aetrix verify that STD4N90K5 is sourced from the original manufacturer or authorized distributors?

All STD4N90K5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD4N90K5 meets industry standards.

7.What is the process for return or replacement of STD4N90K5?

All STD4N90K5 units undergo pre-shipment inspection (PSI). If there is an issue with STD4N90K5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD4N90K5 part is unused and in its original packaging.

Return procedure for STD4N90K5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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