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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD4NK60Z-1

Name: STD4NK60Z-1
Brand: STMicroelectronics
SKU: STD4NK60Z-1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD4NK60Z-1

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: STD4NK60Z-1.pdf

Description:: MOSFET N-CH 600V 4A IPAK

Quantity:: RFQ Add To RFQ list

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Inventory:28

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Product details

Overview

STD4NK60Z-1 from STMicroelectronics is a Zener-protected N-channel SuperMESH Power MOSFET in DPAK (TO-252) package, rated for 600 V drain-source voltage, 2 Ω max R_DS(on) at V_GS = 10 V and I_D = 2 A, and 4 A continuous drain current at T_C = 25 °C. It delivers high dv/dt capability and 100% avalanche-tested ruggedness for high-reliability switching in offline SMPS and AC-DC adapters.

For engineers reviewing the STD4NK60Z-1 datasheet, STD4NK60Z-1 pinout, STD4NK60Z-1 application, or STD4NK60Z-1 equivalent, key selection criteria include its 600 V breakdown voltage, low gate charge (18.8–26 nC), Zener-protected gate, 120 mJ single-pulse avalanche energy, and DPAK thermal resistance (R_thJC = 1.79 °C/W).

Technical Context

This device implements ST's SuperMESH process - an evolution of PowerMESH - to reduce on-resistance while maintaining robust avalanche performance and high dv/dt immunity (4.5 V/ns). Its integrated gate Zener diode clamps transient overvoltage, eliminating external protection in many designs.

The MOSFET features low intrinsic capacitance (C_iss = 510 pF typ., C_oss = 67 pF typ.) and fast switching (t_d(off) = 29 ns typ., t_f = 16.5 ns typ.), enabling high-frequency operation in flyback and PFC stages without sacrificing EMI control or efficiency.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Supports universal-input (85–265 V_AC) offline converters with margin against line surges.
R_DS(on) max	2 Ω @ V_GS = 10 V, I_D = 2 A - Enables low conduction loss in 4 A-rated power stages at room temperature.
Q_g	18.8–26 nC - Reduces gate drive power and enables use with low-current controllers or integrated drivers.
E_AS	120 mJ - Withstands unclamped inductive switching stress without failure, critical for PFC and flyback snubberless designs.
dv/dt	4.5 V/ns - Ensures noise-immune operation in high-noise environments like industrial motor drives and lighting ballasts.
R_thJC	1.79 °C/W - Allows 70 W dissipation at T_C = 25 °C; supports compact heatsinking in space-constrained DPAK layouts.
V_GS(th)	3.0–4.5 V - Compatible with standard 5 V or 3.3 V logic-level gate drivers without level-shifting.

Pinout & Package

DPAK (TO-252) package: surface-mount, single-ended heat sink via exposed tab; thermally optimized for PCB copper area mounting. Mechanical outline conforms to type C3 and type E variants per DS2818 Rev 10.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; Zener-protected (±30 V rating); low input capacitance enables fast turn-on/turn-off.
2 (TAB)	Drain	High-voltage power terminal; electrically connected to exposed metal tab for thermal and electrical path to heatsink/PCB pour.
3 (S)	Source	Power return and reference node; ties gate drive ground; forms source-drain body diode (V_SD = 1.6 V @ 4 A).

Key Features

Feature	Design Value
100% avalanche tested	Guarantees minimum 120 mJ single-pulse energy handling under unclamped inductive load conditions.
Zener-protected gate	Integrated ±30 V clamp eliminates need for external gate protection diodes in most AC-DC applications.
Minimized gate charge	Total Q_g ≤ 26 nC reduces driver losses and simplifies gate drive design for high-frequency (>100 kHz) topologies.
Very low intrinsic capacitance	C_iss = 510 pF and C_rss = 13 pF limit Miller effect, improving switching controllability and reducing EMI generation.
High dv/dt immunity	Rated 4.5 V/ns ensures reliable operation during fast voltage transients common in hard-switched converters.

Applications

Offline AC-DC Adapters

LED Driver Power Stages

Use Scenario: 65 W universal-input flyback converter powering USB-C PD chargers.

IC Role / Device Role: Primary-side high-voltage switch handling 600 V DC link and delivering 4 A peak primary current.

Use Value: Zener protection and 100% avalanche testing eliminate external gate clamping and improve field reliability under output short-circuit events.

Use Scenario: Constant-current buck-boost LED driver for street lighting with 300–400 V DC bus.

IC Role / Device Role: Main switching transistor regulating LED string current up to 4 A in high-side configuration.

Use Value: Low R_DS(on) (1.7 Ω typ.) minimizes conduction loss at high ambient temperatures, extending thermal margin in sealed luminaires.

Industrial SMPS

Appliance Motor Control

Use Scenario: 100 W auxiliary supply in PLC backplane with wide input range and high EMC requirements.

IC Role / Device Role: High-voltage switch in quasi-resonant forward converter operating at 65 kHz.

Use Value: Low C_rss (13 pF) and fast trr (400 ns) reduce switching losses and simplify EMI filter design.

Use Scenario: Fan or pump motor drive in HVAC systems using discrete half-bridge topology.

IC Role / Device Role: Low-side switch in 24–48 V DC-fed H-bridge controlling brushed DC motor direction/speed.

Use Value: Robust 16 A pulsed drain current (I_DM) and 4.5 V/ns dv/dt rating prevent false triggering during commutation spikes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP4NK60ZFP	TO-220FP package; identical electrical specs but higher R_thJC (2.5 °C/W vs. 1.79 °C/W); no exposed drain tab on leadframe.	Better suited for through-hole prototyping or lower-power (<50 W) designs where heatsink attachment differs.	Select when mechanical compatibility with legacy TO-220FP footprints is required and thermal budget allows +40% junction rise.
FQP4N60	No integrated gate Zener; R_DS(on) = 2.5 Ω max; lower E_AS (85 mJ); C_iss = 550 pF.	Lacks built-in gate protection - requires external Zener/clamp; less rugged in surge-prone mains-connected equipment.	Choose only for cost-sensitive, non-safety-critical applications where external protection is acceptable and thermal margin is ample.

Compared with STP4NK60ZFP and FQP4N60, STD4NK60Z-1 provides superior thermal performance in surface-mount layouts, guaranteed gate protection without added components, and higher avalanche energy - making it optimal for compact, high-reliability AC-DC power supplies.

Availability

STD4NK60Z-1 is available at Aetrix Electronics and suitable for offline AC-DC adapters, industrial SMPS, and LED driver power stages requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STD4NK60Z-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STD4NK60Z-1 belongs to ST's SuperMESH Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 600 V-class offline power conversion applications.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STD4NK60Z-1 supports 2.5 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS2818 Rev 10. This derating reflects thermal limits of the DPAK package and must be applied in thermally constrained designs such as enclosed LED drivers or sealed power supplies.

Does this MOSFET include an integrated body diode, and what are its recovery characteristics?

Yes - it integrates a source-drain body diode with 4 A continuous rating and 16 A pulsed capability. Its reverse recovery time (t_rr) is 400 ns at I_SD = 4 A, di/dt = 100 A/µs, and T_J = 150 °C, and it delivers 1.7 µC reverse recovery charge (Q_rr), enabling efficient operation in discontinuous conduction mode (DCM) flyback converters.

Can STD4NK60Z-1 replace STD4NK60ZT4 in existing designs?

Yes - STD4NK60Z-1 and STD4NK60ZT4 share identical electrical specifications, package (DPAK), pinout, and thermal performance. The "-1" suffix denotes a later revision with updated documentation and packaging compliance (ECOPACK2), but no functional or parametric differences exist per ST's revision history in DS2818 Rev 10.

What is the safe operating area (SOA) limitation at 480 V drain voltage?

At V_DS = 480 V, the maximum allowable pulse width is limited by SOA to approximately 10 µs for 4 A pulses (per Figure 1 in DS2818), due to secondary breakdown constraints. For reliable operation, designers must ensure pulse duration and duty cycle remain within the bounded SOA curve, especially in unclamped inductive switching.

STD4NK60Z-1 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH™

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2Ohm @ 2A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 26 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 510 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 70W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK

STD4NK60Z-1 FAQ

1.How can I place an order for STD4NK60Z-1 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD4NK60Z-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD4NK60Z-1 reliable?

The price and inventory of STD4NK60Z-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD4NK60Z-1 is usually 5 days.

3.What payment methods are accepted for STD4NK60Z-1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD4NK60Z-1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD4NK60Z-1?

STD4NK60Z-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD4NK60Z-1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD4NK60Z-1?

For technical support, including STD4NK60Z-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD4NK60Z-1 requirements.

6.How does Aetrix verify that STD4NK60Z-1 is sourced from the original manufacturer or authorized distributors?

All STD4NK60Z-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD4NK60Z-1 meets industry standards.

7.What is the process for return or replacement of STD4NK60Z-1?

All STD4NK60Z-1 units undergo pre-shipment inspection (PSI). If there is an issue with STD4NK60Z-1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD4NK60Z-1 part is unused and in its original packaging.

Return procedure for STD4NK60Z-1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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