STMicroelectronics STD4NK80Z-1

Overview

STD4NK80Z-1 from STMicroelectronics is an N-channel 800 V, 3 Ω, 3 A SuperMESH™ MOSFET in IPAK (TO-251) package with integrated gate-source Zener protection. It serves as a high-voltage switching device in offline SMPS, AC-DC adapters, and lighting ballasts, delivering 190 mJ single-pulse avalanche energy and 4.5 V/ns dv/dt capability under defined conditions.

For engineers reviewing the STD4NK80Z-1 datasheet, STD4NK80Z-1 pinout, STD4NK80Z-1 application, or STD4NK80Z-1 equivalent, key selection criteria include its 800 V drain-source breakdown voltage, 3 Ω R_DS(on) at V_GS = 10 V, 1.56 °C/W junction-to-case thermal resistance, built-in Zener-protected gate, and IPAK package suitability for through-hole mounting with moderate power dissipation.

Technical Context

This MOSFET employs ST's optimized strip-based PowerMESH™ layout to achieve low on-resistance while maintaining robust dv/dt immunity-critical for hard-switched flyback and resonant converters operating near line transients. Its Zener-protected gate structure eliminates external clamping components and supports reliable gate drive up to ±30 V.

The device features 100% avalanche-tested ruggedness, 3000 V HBM ESD rating, and a source-drain diode with 400 ns reverse recovery time and 7.6 A peak reverse recovery current at 150 °C-enabling stable operation in discontinuous conduction mode (DCM) topologies without snubber dependency.

Key Specifications

Pinout & Package

STD4NK80Z-1 uses the IPAK (TO-251) package: a 3-lead, through-hole, single-ended leadframe variant of DPAK with gull-wing leads bent downward for PCB insertion. It provides mechanical robustness and thermal performance comparable to TO-220 but with smaller footprint and lower profile.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET switching applications.

Compared with STP4NK80Z and STD4NK80ZT4, STD4NK80Z-1 offers identical electrical performance in a through-hole IPAK package-providing mechanical stability and simplified thermal interface for mid-volume industrial power supplies where SMT infrastructure is unavailable or TO-220 is oversized.

Availability

STD4NK80Z-1 is available at Aetrix Electronics and suitable for AC-DC adapters, flyback SMPS, and industrial power supplies requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for STD4NK80Z-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to ST's SuperMESH™ high-voltage MOSFET product line-engineered specifically for rugged, high-efficiency offline switching applications demanding high dv/dt immunity, avalanche robustness, and Zener-integrated gate protection.

FAQ

What is the maximum continuous drain current for STD4NK80Z-1 at 100°C case temperature?

The maximum continuous drain current is 1.89 A at T_C = 100 °C, as specified in Table 1 of the datasheet. This derating reflects thermal limitations of the IPAK package and ensures junction temperature remains within the −55 to 150 °C operating range under sustained load.

Does STD4NK80Z-1 require an external gate resistor for ESD protection?

No. The device integrates back-to-back Zener diodes between gate and source with 30 V breakdown voltage, providing inherent ESD protection up to 3000 V HBM. An external gate resistor is still recommended for switching speed control and ringing suppression-but not for basic ESD clamping.

Can STD4NK80Z-1 replace STD4NK80ZT4 in a design?

Electrically yes, but mechanically no: both share identical die and R_DS(on), but STD4NK80Z-1 uses through-hole IPAK leads while STD4NK80ZT4 uses surface-mount DPAK. PCB layout, assembly process, and thermal interface must be redesigned to accommodate the different package form factor and mounting method.

What is the safe operating area (SOA) limitation at 400 V drain-source voltage?

At V_DS = 400 V, the SOA curve (Figure 1) limits continuous DC current to approximately 1.2 A for unlimited pulse width, based on thermal constraints. For pulsed operation (≤10 ms), it supports up to 3 A-enabling use in short-duty-cycle applications like LED drivers or burst-mode SMPS.