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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD55N4F5

Name: STD55N4F5
Brand: STMicroelectronics
SKU: STD55N4F5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD55N4F5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD55N4F5.pdf

Description:: MOSFET N-CH 40V 55A DPAK

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Product details

Overview

STD55N4F5 from STMicroelectronics is a N-channel 40 V, 7.3 mΩ R_DS(on), 55 A continuous drain current DPAK Power MOSFET using STripFET™ V technology. It delivers low conduction loss and high avalanche ruggedness for automotive switching applications including motor control and DC-DC conversion.

For engineers reviewing the STD55N4F5 datasheet, STD55N4F5 pinout, STD55N4F5 application, or STD55N4F5 equivalent, key selection criteria include its 40 V V_DS, 7.3 mΩ on-resistance at 10 V gate drive, 100% avalanche-tested reliability, DPAK thermal performance (R_thj-case = 2.5 °C/W), and automotive-grade qualification.

Technical Context

This MOSFET employs STripFET™ V planar trench technology optimized for low R_DS(on) × Q_g figure of merit and fast switching with controlled dv/dt (15 V/ns). Its gate threshold voltage (2–4 V) enables standard logic-level drive compatibility without dedicated level-shifting circuitry.

The device integrates a robust body diode with 55 A continuous source-drain current capability, 1.5 V forward voltage at 55 A, and 40 ns reverse recovery time under harsh inductive switching conditions (di/dt = 100 A/µs, T_j = 150 °C).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 12 V automotive systems and 24 V industrial rails.
R_DS(on) max	8.5 mΩ at V_GS = 10 V, I_D = 27.5 A - Enables <1 W conduction loss at 40 A, reducing heatsink requirements.
I_D (continuous)	55 A at T_C = 25 °C - Supports high-current loads such as starter solenoids and power window motors.
E_AS	100 mJ single-pulse avalanche energy - Ensures reliable operation during inductive load turn-off transients without external snubbers.
R_thj-case	2.5 °C/W - Allows direct mounting to PCB copper pour or heatsink for efficient thermal management in space-constrained modules.
Q_g	25 nC total gate charge - Balances switching speed and gate driver stress for 100 kHz+ PWM operation.

Pinout & Package

Package: DPAK (TO-252), surface-mount, single-die configuration with exposed drain pad for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side return path; electrically tied to PCB ground plane via multiple vias for low-inductance routing.
Pin 2 (Gate)	Control input	High-impedance MOSFET gate requiring <100 nA leakage current; sensitive to ESD and layout parasitics.
Pin 3 (Drain)	Power output / Drain	Exposed metal tab connected internally to drain; must be soldered to large copper area for thermal dissipation and current conduction.

Key Features

Feature	Design Value
Standard threshold drive	V_GS(th) = 2–4 V enables direct interface with 3.3 V or 5 V microcontrollers without gate drivers.
100% avalanche tested	Each unit validated to withstand 100 mJ unclamped inductive energy-critical for automotive load dump survival.
STripFET™ V technology	Optimized trench geometry achieves best-in-class R_DS(on) × Q_g FOM for reduced switching + conduction losses.
DPAK thermal performance	R_thj-case = 2.5 °C/W supports >40 W continuous power dissipation with minimal heatsinking.

Applications

Automotive Motor Control

DC-DC Converter Primary Switch

Use Scenario: Driving brushed DC motors in power seats, sunroofs, and HVAC blowers in 12 V vehicle architectures.

IC Role / Device Role / Timing Role: High-side or low-side power switch handling 30–50 A peak currents with PWM frequencies up to 20 kHz.

Use Value: Low R_DS(on) minimizes I²R heating during extended duty cycles; avalanche rating prevents failure during motor stall or back-EMF spikes.

Use Scenario: Primary-side synchronous rectifier or main switch in 12 V to 5 V/3.3 V buck converters for ADAS ECUs and infotainment systems.

IC Role / Device Role / Timing Role: Fast-switching power transistor operating at 200–500 kHz with tight dead-time control.

Use Value: 25 nC Q_g and 15 V/ns dv/dt enable efficient high-frequency operation while maintaining EMI compliance.

Automotive Lighting Driver

Industrial Solenoid Interface

Use Scenario: PWM dimming and on/off control of LED headlamps and daytime running lights (DRL) with overvoltage protection.

IC Role / Device Role / Timing Role: Low-side switch interfacing between MCU GPIO and LED string, supporting 1–10 kHz PWM modulation.

Use Value: 40 V V_DS accommodates load dump transients up to ±60 V; 1.5 V body diode V_SD ensures safe freewheeling during PWM off-time.

Use Scenario: Driving 24 V industrial solenoids and valves in PLC I/O modules and factory automation controllers.

IC Role / Device Role / Timing Role: Robust power switch handling inductive kickback up to 220 A pulsed current during de-energization.

Use Value: 220 A I_DM and 100 mJ E_AS eliminate need for external flyback diodes in compact designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF540NPBF	R_DS(on) = 44 mΩ @ 10 V, V_DS = 100 V, TO-220 package	Higher voltage rating but 6× higher on-resistance; requires larger heatsink and cannot match STD55N4F5's efficiency in 12 V systems.	Select only if 100 V blocking is required and thermal budget allows higher conduction loss.
STP55NF06L	R_DS(on) = 12 mΩ @ 10 V, V_DS = 60 V, TO-220FP package	Higher R_DS(on) and through-hole mounting; lacks 100% avalanche testing per STD55N4F5 spec.	Prefer STD55N4F5 for surface-mount automotive designs where avalanche ruggedness and thermal density are critical.

Compared with IRF540NPBF and STP55NF06L, STD55N4F5 offers superior power density (55 A in DPAK), lower conduction loss, and guaranteed avalanche immunity-making it the optimal choice for space- and reliability-constrained 12 V automotive switching.

Availability

STD55N4F5 is available at Aetrix Electronics and suitable for automotive motor control, DC-DC converter primary switching, and industrial solenoid interface applications requiring stable component supply across production lifecycles.

Supply support for STD55N4F5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, digital, and mixed-signal ICs and discrete devices for automotive, industrial, and consumer markets.

STD55N4F5 belongs to ST's STripFET™ V Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in automotive powertrain and body electronics where low R_DS(on), avalanche robustness, and surface-mount thermal performance are essential.

FAQ

What is the maximum junction temperature for continuous operation?

The STD55N4F5 has a specified operating junction temperature range of –55 °C to +175 °C. For continuous operation at rated current, thermal design must ensure T_j remains ≤175 °C, typically achieved by limiting case temperature to ≤100 °C using the 2.5 °C/W R_thj-case and appropriate PCB copper area or heatsinking.

Does this MOSFET require a gate resistor for automotive PWM applications?

Yes-a gate resistor (typically 4.7 Ω as used in the datasheet test circuit) is recommended to dampen ringing, limit peak gate current, and control switching speed. This improves EMI behavior and prevents shoot-through in half-bridge configurations, especially when driving inductive loads like motors or solenoids in automotive environments.

Can STD55N4F5 replace older STP55NF06L in existing designs?

Direct replacement is possible only with layout and thermal review: STD55N4F5 uses DPAK (surface-mount) vs. TO-220FP (through-hole), has lower R_DS(on) (7.3 mΩ vs. 12 mΩ), and higher avalanche rating. PCB footprint, solder reflow profile, and gate drive strength must be verified; no changes to gate drive voltage or logic levels are needed due to matching V_GS(th) range.

Is the body diode suitable for freewheeling in synchronous rectification?

The integrated body diode supports freewheeling with V_SD = 1.5 V at 55 A and t_rr = 40 ns, but it is not optimized for synchronous rectification. For high-efficiency DC-DC converters, an external Schottky or MOSFET-based synchronous rectifier is preferred; however, the body diode provides safe, robust clamping during transient events without external components.

STD55N4F5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ V

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 55A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 8.5mOhm @ 27.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1600 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 60W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD55N4F5 FAQ

1.How can I place an order for STD55N4F5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD55N4F5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD55N4F5 reliable?

The price and inventory of STD55N4F5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD55N4F5 is usually 5 days.

3.What payment methods are accepted for STD55N4F5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD55N4F5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD55N4F5?

STD55N4F5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD55N4F5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD55N4F5?

For technical support, including STD55N4F5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD55N4F5 requirements.

6.How does Aetrix verify that STD55N4F5 is sourced from the original manufacturer or authorized distributors?

All STD55N4F5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD55N4F5 meets industry standards.

7.What is the process for return or replacement of STD55N4F5?

All STD55N4F5 units undergo pre-shipment inspection (PSI). If there is an issue with STD55N4F5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD55N4F5 part is unused and in its original packaging.

Return procedure for STD55N4F5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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