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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD5N52K3

Name: STD5N52K3
Brand: STMicroelectronics
SKU: STD5N52K3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD5N52K3

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD5N52K3.pdf

Description:: MOSFET N-CH 525V 4.4A DPAK

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Product details

Overview

STD5N52K3 from STMicroelectronics is an N-channel 525 V, 1.2 Ω (typ), 4.4 A SuperMESH3™ Power MOSFET in DPAK (TO-252) package, designed for high-voltage switching in offline SMPS, lighting ballasts, and AC-DC adapters. It features 100% avalanche tested ruggedness, 12 V/ns dv/dt capability, and integrated gate Zener protection.

For engineers reviewing the STD5N52K3 datasheet, STD5N52K3 pinout, STD5N52K3 application, or STD5N52K3 equivalent, key selection criteria include its 525 V V_DS, low 1.2 Ω R_DS(on) at V_GS = 10 V, 70 W P_TOT (T_C = 25 °C), Zener-protected gate, and enhanced diode reverse recovery (t_rr = 210 ns, Q_rr = 1.3 µC).

Technical Context

This device uses ST's SuperMESH3™ vertical structure-evolved from SuperMESH™-to achieve ultra-low on-resistance while maintaining high avalanche energy (E_AS = 100 mJ) and robust dv/dt immunity. Its optimized capacitance profile (C_iss = 545 pF, C_rss = 8 pF) supports fast, low-loss switching in hard-switched topologies.

The built-in back-to-back gate-source Zener diodes clamp transients to ±30 V (BVGSO), eliminating external protection components. The source-drain diode exhibits improved reverse recovery (t_rr = 210 ns at T_J = 25 °C, 12 A peak IRRM) for reduced switching losses in flyback and resonant converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	525 V - Withstands full mains voltage surges in 230 VAC systems without derating.
R_DS(on) max	1.5 Ω @ V_GS = 10 V, I_D = 2.2 A - Enables low conduction loss in 4.4 A continuous applications.
I_D (cont)	4.4 A @ T_C = 25 °C - Supports compact heatsink designs in space-constrained adapters.
E_AS	100 mJ - Ensures reliable unclamped inductive switching in flyback and PFC stages.
t_rr	210 ns @ I_SD = 4.4 A, di/dt = 100 A/µs - Reduces turn-on loss of synchronous rectifiers and snubberless designs.
dv/dt	12 V/ns - Prevents spurious turn-on in high-noise industrial and lighting environments.
Q_g	17 nC @ V_DD = 420 V, I_D = 4.4 A - Enables efficient gate drive with standard 1-A drivers.

Pinout & Package

STD5N52K3 is housed in a surface-mount DPAK (TO-252) package with exposed drain pad for thermal performance. The package complies with ECOPACK® environmental standards and supports automated reflow assembly.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; Zener-protected to ±30 V; requires <4.7 Ω series resistance for EMI suppression.
2 (D)	Drain	Main power output; electrically connected to exposed copper pad for low R_th(j-pcb) (50 °C/W).
3 (S)	Source	Power return and reference node; ties to PCB ground plane for stable switching and EMI control.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse E_AS = 100 mJ reliability without screening failure risk.
Extremely high dv/dt capability	12 V/ns rating prevents false triggering in noisy high-side switch configurations.
Gate charge minimized	Q_g = 17 nC enables <100 ns switching transitions with low-power gate drivers.
Very low intrinsic capacitance	C_rss = 8 pF reduces Miller effect, improving noise immunity and gate drive efficiency.
Zener-protected gate	Integrated ±30 V BVGSO eliminates need for external TVS, saving BOM cost and board area.

Applications

Offline AC-DC Adapters

LED Lighting Ballasts

Use Scenario: 230 VAC input, 65 W flyback converter powering USB-C PD chargers.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch operating at 65–130 kHz with discontinuous conduction mode (DCM).

Use Value: 525 V V_DS and 100 mJ E_AS ensure robustness against line surges and transformer leakage spikes without snubbers.

Use Scenario: Constant-current LED driver for street lighting using quasi-resonant buck-boost topology.

IC Role / Device Role / Timing Role: Main power switch controlling current through high-brightness LED strings at 50–100 kHz.

Use Value: Low 1.2 Ω R_DS(on) minimizes conduction loss at 4.4 A, enabling >90% efficiency at full load.

Industrial SMPS

Appliance Power Supplies

Use Scenario: 48 V/5 A isolated DC-DC module for PLC I/O modules with wide input range (85–265 VAC).

IC Role / Device Role / Timing Role: Primary-side MOSFET in dual-switch forward converter with synchronous rectification.

Use Value: Fast t_rr = 210 ns and low Q_rr = 1.3 µC reduce cross-conduction loss during dead-time transitions.

Use Scenario: Embedded power supply in washing machine main control board handling motor drive and MCU logic rails.

IC Role / Device Role / Timing Role: High-side switch in auxiliary 12 V/1 A standby supply with burst-mode operation.

Use Value: Zener-protected gate withstands repeated hot-plug events and ESD during service, eliminating field failures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5N52K3	Same die, TO-220 package; R_th(j-case) = 1.79 °C/W vs DPAK's 5 °C/W; higher P_TOT = 70 W (same T_C).	Requires through-hole assembly and larger heatsink; better for high-power, low-volume industrial units.	Select when thermal budget allows larger footprint and mechanical mounting is preferred over SMT.
FQP5N50	500 V V_DS, 1.4 Ω R_DS(on), no integrated Zener; lower E_AS (not specified), higher C_iss (720 pF).	Lacks gate protection and avalanche rating; unsuitable for surge-prone mains-connected designs.	Only consider for cost-sensitive, low-risk 115 VAC-only applications with external gate clamping.

Compared with STP5N52K3, STD5N52K3 trades thermal performance for SMT manufacturability and board density; versus FQP5N50, it delivers verified ruggedness, lower dynamic losses, and gate-level protection-critical for certified power supplies.

Availability

STD5N52K3 is available at Aetrix Electronics and suitable for offline AC-DC adapters, LED lighting ballasts, and industrial SMPS requiring stable component supply across production lifecycles.

Supply support for STD5N52K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STD5N52K3 belongs to ST's SuperMESH3™ Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in universal-input offline power converters.

FAQ

What is the maximum safe operating temperature for STD5N52K3?

The junction temperature must not exceed 150 °C under continuous operation. At T_C = 25 °C, the device dissipates up to 70 W; derating is required above 25 °C per R_th(j-case) = 5 °C/W. PCB layout with ≥200 mm² copper pour under the drain pad is essential to maintain thermal performance.

Does STD5N52K3 require external gate protection?

No. STD5N52K3 integrates back-to-back Zener diodes between gate and source with ±30 V breakdown voltage (BVGSO), providing inherent protection against ESD and gate transients. External TVS devices are unnecessary unless system-level surge requirements exceed IEC 61000-4-5 Level 4.

How does the SuperMESH3™ technology improve performance over prior generations?

SuperMESH3™ combines an optimized vertical trench structure with refined cell pitch and epitaxial layer doping, reducing R_DS(on) by ~15% versus SuperMESH™ while improving dv/dt immunity and lowering C_rss. This yields higher efficiency in 65–130 kHz SMPS and greater ruggedness in unclamped inductive switching.

Can STD5N52K3 be used in synchronous rectification?

No. STD5N52K3 is a standard N-channel enhancement-mode MOSFET with a body diode optimized for reverse recovery (t_rr = 210 ns), not a dedicated synchronous rectifier. Its gate threshold (V_GS(th) = 3–4.5 V) and lack of logic-level drive compatibility make it unsuitable for low-voltage secondary-side switching.

STD5N52K3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH3™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 525 V

Current - Continuous Drain (Id) @ 25°C:: 4.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.5Ohm @ 2.2A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 545 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 70W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD5N52K3 FAQ

1.How can I place an order for STD5N52K3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD5N52K3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD5N52K3 reliable?

The price and inventory of STD5N52K3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD5N52K3 is usually 5 days.

3.What payment methods are accepted for STD5N52K3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD5N52K3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD5N52K3?

STD5N52K3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD5N52K3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD5N52K3?

For technical support, including STD5N52K3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD5N52K3 requirements.

6.How does Aetrix verify that STD5N52K3 is sourced from the original manufacturer or authorized distributors?

All STD5N52K3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD5N52K3 meets industry standards.

7.What is the process for return or replacement of STD5N52K3?

All STD5N52K3 units undergo pre-shipment inspection (PSI). If there is an issue with STD5N52K3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD5N52K3 part is unused and in its original packaging.

Return procedure for STD5N52K3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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