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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD5N52U

Name: STD5N52U
Brand: STMicroelectronics
SKU: STD5N52U
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD5N52U

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD5N52U.pdf

Description:: MOSFET N-CH 525V 4.4A DPAK

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Product details

Overview

STD5N52U from STMicroelectronics is an N-channel 525 V, 1.25 Ω typ., 4.4 A UltraFASTmesh™ Power MOSFET in DPAK (TO-252) package, designed for high-voltage switching applications with fast body-diode recovery and integrated Zener gate protection. It delivers 70 W total dissipation at T_C = 25 °C, 20 V/ns dv/dt capability, and 55 ns reverse recovery time (T_J = 25 °C).

For engineers reviewing the STD5N52U datasheet, STD5N52U pinout, STD5N52U application, or STD5N52U equivalent, key selection criteria include R_DS(on) stability over temperature, avalanche energy rating (170 mJ), low gate charge (16.9 nC), and DPAK thermal resistance (1.79 °C/W junction-to-case).

Technical Context

This device employs ST's UltraFASTmesh™ process to simultaneously minimize R_DS(on), intrinsic capacitances (C_iss = 529 pF, C_oss = 71 pF), and gate charge while enhancing dv/dt immunity. Its built-in back-to-back Zener diodes provide ±30 V gate-source ESD protection without external components.

The integrated fast-recovery body diode achieves t_rr = 55 ns at I_SD = 4.4 A and di/dt = 100 A/μs, enabling efficient hard-switching in flyback and resonant converters. Safe operating area (SOA) is defined up to 4.4 A continuous drain current at T_C = 25 °C and supports unclamped inductive switching with 170 mJ single-pulse avalanche energy.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	525 V - supports primary-side switching in offline SMPS up to 380 V DC bus with margin.
R_DS(on) max	1.5 Ω @ V_GS = 10 V, I_D = 2.2 A - ensures low conduction loss in medium-power 4–5 A applications.
I_D cont.	4.4 A @ T_C = 25 °C - defines maximum continuous current under heatsink-cooled conditions.
t_rr	55 ns @ I_SD = 4.4 A, di/dt = 100 A/μs - enables high-frequency operation with minimal switching loss in diode-commutated topologies.
Q_g	16.9 nC - determines gate drive power requirement and influences turn-on/turn-off timing control.
E_AS	170 mJ - quantifies ruggedness against inductive load transients without external snubbers.
dv/dt	20 V/ns - allows reliable operation in noisy high-dV/dt environments like motor drives and PFC stages.

Pinout & Package

STD5N52U is housed in a surface-mount DPAK (TO-252) package with three terminals: Gate (G), Drain (D), and Source (S). The exposed drain tab (pin 2) serves as both electrical connection and thermal path to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
G (Pin 1)	Gate control input	Accepts 10 V logic-level drive; protected by integrated ±30 V Zener clamp.
D (Pin 2 / Tab)	Drain output / heat sink interface	High-voltage switching node; tab must be connected to PCB thermal pad for R_thj-pcb = 50 °C/W performance.
S (Pin 3)	Source reference / return path	Common source node for gate drive and current sensing; ties to power ground in low-side configurations.

Key Features

Feature	Design Value
UltraFASTmesh™ process integration	Simultaneously reduces R_DS(on), C_iss, and Q_g - improves efficiency and switching speed without trade-offs.
Integrated Zener gate protection	±30 V breakdown voltage - eliminates need for external gate clamps in cost-sensitive designs.
Fast body-drain diode	t_rr = 55 ns, Q_rr = 95 nC - minimizes commutation loss in quasi-resonant and LLC converters.
Enhanced dv/dt immunity	20 V/ns rated slope - prevents spurious turn-on in high-noise industrial power stages.

Applications

AC-DC Adapter Primary Switch

Flyback Converter Main Switch

Use Scenario: 36 W universal-input offline adapter powering consumer electronics.

IC Role / Device Role / Timing Role: High-side N-channel switch controlling primary current in discontinuous conduction mode (DCM) flyback.

Use Value: Low R_DS(on) (1.25 Ω typ.) reduces conduction loss at 4.4 A peak; fast t_rr avoids cross-conduction during zero-voltage switching transitions.

Use Scenario: Isolated 24 V/2 A industrial power supply with tight EMI requirements.

IC Role / Device Role / Timing Role: Primary-side power switch in fixed-frequency flyback with synchronous rectification on secondary.

Use Value: 525 V V_DS rating provides 25% margin above 400 V DC link; 170 mJ E_AS withstands transformer leakage inductance spikes.

LED Driver Bulk Switch

Industrial HV DC-DC Pre-regulator

Use Scenario: Constant-current LED driver for street lighting with 300–450 V DC input.

IC Role / Device Role / Timing Role: Buck-derived primary switch regulating bulk voltage before constant-current stage.

Use Value: DPAK package enables compact layout with 50 °C/W R_thj-pcb; low C_oss (71 pF) reduces capacitive turn-off loss at 100 kHz switching.

Use Scenario: 48 V to 380 V boost pre-regulator in telecom rectifier systems.

IC Role / Device Role / Timing Role: High-efficiency boost switch handling 4.4 A average current in continuous conduction mode (CCM).

Use Value: 20 V/ns dv/dt rating prevents false triggering from bus transients; Zener gate protection sustains reliability across 10-year field life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5N52FD	Same V_DS (525 V), higher R_DS(on) (1.8 Ω max), TO-220 package, no integrated Zener	Requires external gate clamp; better suited for through-hole prototyping or lower-density layouts	Select when board space permits TO-220 and gate drive circuit already includes Zener protection.
IPP50R190C7	Lower V_DS (500 V), lower R_DS(on) (0.19 Ω), CoolMOS™ technology, 8-pin PG-TO220FP-3	Higher efficiency at >100 kHz but reduced voltage margin; requires optimized gate drive for fast switching	Prefer for high-frequency (>200 kHz) designs where 500 V rating suffices and thermal budget is tighter.

Compared with STP5N52FD and IPP50R190C7, STD5N52U uniquely balances 525 V rating, integrated gate protection, DPAK footprint, and 55 ns t_rr-making it optimal for cost-sensitive, medium-frequency (60–130 kHz), surface-mount flyback and adapter designs requiring robustness without added components.

Availability

STD5N52U is available at Aetrix Electronics and suitable for AC-DC adapters, flyback converters, LED drivers, and industrial HV DC-DC pre-regulators requiring stable component supply, long-term lifecycle support, and RoHS-compliant DPAK packaging.

Supply support for STD5N52U includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, delivering intelligent power, microcontrollers, sensors, and analog solutions for industrial, automotive, and consumer markets.

STD5N52U belongs to ST's UltraFASTmesh™ Power MOSFET product line, engineered specifically for high-voltage, medium-current switching in compact, cost-optimized offline power supplies and lighting drivers.

FAQ

What is the maximum continuous drain current for STD5N52U at 100 °C case temperature?

The maximum continuous drain current is 2.8 A at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limits of the DPAK package and ensures safe operation within its SOA curve without exceeding 150 °C junction temperature.

Does STD5N52U require an external gate resistor for typical flyback applications?

Yes-a gate resistor (typically 4.7 Ω) is recommended to control dV/dt and prevent oscillation, as shown in Figure 16 of the datasheet. The device's low Q_g (16.9 nC) allows moderate gate resistance without excessive switching loss, balancing EMI and efficiency.

Can STD5N52U replace STF5N52U in a design using TO-220FP?

No-STD5N52U uses DPAK (TO-252) while STF5N52U uses TO-220FP; they differ in thermal resistance (1.79 vs. 5 °C/W), mounting method (SMD vs. through-hole), and mechanical footprint. Direct replacement requires PCB redesign and thermal re-evaluation due to 2.8× higher R_thj-case in TO-220FP.

Is the body diode in STD5N52U suitable for synchronous rectification?

No-the body diode is optimized for fast recovery in freewheeling roles (e.g., flyback snubberless operation), not bidirectional conduction. Its V_SD = 1.6 V and Q_rr = 95 nC make it inefficient for synchronous rectification; discrete Schottky or MOSFETs with dedicated low-V_f diodes are preferred.

STD5N52U Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: UltraFASTmesh™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 525 V

Current - Continuous Drain (Id) @ 25°C:: 4.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.5Ohm @ 2.2A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 16.9 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 529 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 70W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD5N52U FAQ

1.How can I place an order for STD5N52U through Aetrix?

Please submit a Request for Quotation (RFQ) for STD5N52U on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD5N52U reliable?

The price and inventory of STD5N52U are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD5N52U is usually 5 days.

3.What payment methods are accepted for STD5N52U?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD5N52U transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD5N52U?

STD5N52U orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD5N52U order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD5N52U?

For technical support, including STD5N52U datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD5N52U requirements.

6.How does Aetrix verify that STD5N52U is sourced from the original manufacturer or authorized distributors?

All STD5N52U products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD5N52U meets industry standards.

7.What is the process for return or replacement of STD5N52U?

All STD5N52U units undergo pre-shipment inspection (PSI). If there is an issue with STD5N52U, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD5N52U part is unused and in its original packaging.

Return procedure for STD5N52U:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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