STMicroelectronics STD5N60M2

Overview

STD5N60M2 from STMicroelectronics is an N-channel 600 V, 1.4 Ω (max), 3.5 A Power MOSFET in DPAK (TO-252) package, built on MDmesh™ M2 technology for high-efficiency SMPS, PFC stages, and industrial motor drives requiring low conduction loss and robust avalanche capability.

For engineers reviewing the STD5N60M2 datasheet, STD5N60M2 pinout, STD5N60M2 application, or STD5N60M2 equivalent, key selection criteria include its 8 nC total gate charge, 19.5 pF equivalent output capacitance at 0–480 V, 100% avalanche tested rating, Zener-protected gate, and thermal resistance of 2.8 °C/W (junction-to-case).

Technical Context

This device uses ST's MDmesh™ M2 strip layout and optimized vertical structure to achieve low R_DS(on) while maintaining high voltage blocking. Its COSS profile is engineered for reduced switching loss in hard-switched converters, and the integrated Zener diode protects against gate overvoltage transients.

The MOSFET supports unclamped inductive switching with 80 mJ single-pulse avalanche energy and exhibits rugged dv/dt performance up to 50 V/ns under defined conditions (V_DS ≤ 480 V), enabling reliable operation in noisy power systems.

Key Specifications

Pinout & Package

DPAK (TO-252) package with exposed drain tab (pin 2) for thermal and electrical connection; standard 3-lead surface-mount outline compliant with ECOPACK® environmental specifications.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP5N60M2 and STU5N60M2, STD5N60M2 offers superior junction-to-ambient thermal performance (62.5 °C/W) due to its DPAK package's large exposed drain tab and optimized PCB copper coupling - a decisive advantage in compact, high-power-density surface-mount power supplies.

Availability

STD5N60M2 is available at Aetrix Electronics and suitable for industrial motor drives, telecom SMPS, AC-DC PFC stages, and UPS inverters requiring stable component supply and long-term production continuity.

Supply support for STD5N60M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STD5N60M2 belongs to ST's MDmesh™ M2 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching power conversion in 600 V-class applications.

FAQ

What is the maximum continuous drain current for STD5N60M2 at 100 °C case temperature?

The maximum continuous drain current is 2.2 A at T_C = 100 °C, as specified in Table 1 of DS9958 Rev 5. This derating reflects thermal limits of the DPAK package and ensures safe operation within the SOA boundary at elevated temperatures.

Does STD5N60M2 include integrated gate protection?

Yes - STD5N60M2 features an integrated Zener diode between gate and source that clamps gate voltage to approximately ±20 V, protecting against ESD and transient overvoltage without requiring external components.

Can STD5N60M2 be used in zero-voltage switching (ZVS) circuits?

Yes - its low and well-characterized C_oss,eq (19.5 pF) and soft reverse recovery (Q_rr = 1.05 µC, t_rr = 220 ns) make it suitable for ZVS operation in resonant LLC and phase-shifted full-bridge topologies where precise output capacitance control is required.

Is the DPAK package of STD5N60M2 lead-free and RoHS-compliant?

Yes - STD5N60M2 is offered in ECOPACK®-compliant DPAK packaging, meeting RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006, with lead-free terminations and halogen-free molding compound.