STMicroelectronics STD5N62K3

Overview

STD5N62K3 from STMicroelectronics is an N-channel 620 V, 1.28 Ω typ. (1.6 Ω max), 4.2 A MDmesh™ K3 Power MOSFET in DPAK (TO-252) package, optimized for high-voltage switching in offline SMPS, PFC stages, and industrial motor drives where avalanche ruggedness and low gate charge are critical.

For engineers reviewing the STD5N62K3 datasheet, STD5N62K3 pinout, STD5N62K3 application, or STD5N62K3 equivalent, key selection criteria include its 12 V/ns dv/dt capability, 26 nC total gate charge, Zener-protected gate, and 120 mJ single-pulse avalanche energy - all confirmed in DS6792 Rev 3.

Technical Context

This device employs ST's MDmesh™ K3 vertical superjunction architecture to achieve ultra-low R_DS(on) while maintaining high breakdown voltage and fast switching. Its optimized cell layout reduces intrinsic capacitance (C_iss = 680 pF, C_oss = 50 pF) and improves diode reverse recovery (t_rr = 290 ns at T_j = 25 °C).

The integrated back-to-back gate-source Zener diodes provide ±30 V clamping, eliminating external ESD protection components. Thermal design is enabled by a 1.79 °C/W junction-to-case resistance and 50 °C/W junction-to-PCB (1 inch² FR-4, 2 oz Cu) rating.

Key Specifications

Pinout & Package

DPAK (TO-252) package with exposed drain tab on underside for thermal and electrical connection; standard 3-pin surface-mount footprint compatible with automated assembly and reflow.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP5N62K3 and FDPF5N62WT, STD5N62K3 delivers superior thermal performance in surface-mount layouts and eliminates external gate protection, making it optimal for high-density, automated production of mid-power SMPS.

Availability

STD5N62K3 is available at Aetrix Electronics and suitable for AC-DC power supplies, industrial motor drives, LED drivers, and telecom DC-DC converters requiring stable component supply and long-term manufacturability.

Supply support for STD5N62K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and power applications since 1987.

STD5N62K3 belongs to the MDmesh™ K3 Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 600 V-class offline power conversion systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous drain current (I_D) at T_C = 100 °C is 3 A, as specified in Table 1 of DS6792 Rev 3. This derating reflects thermal limits of the DPAK package and ensures safe operation within the SOA boundary at elevated temperatures.

Does STD5N62K3 require external gate protection?

No. STD5N62K3 integrates back-to-back Zener diodes between gate and source with ±30 V breakdown voltage, providing inherent ESD and overvoltage protection without external components, as confirmed in Table 8 and the Features section.

How does its avalanche capability compare to standard 600 V MOSFETs?

STD5N62K3 is 100% avalanche tested to 120 mJ (E_AS) at T_j = 25 °C, exceeding typical 600 V MOSFETs rated at 40–80 mJ. This enables reliable unclamped inductive switching in flyback and resonant converters without snubbers.

Can it be used in synchronous rectification topologies?

Yes - its low Q_rr (1.9 µC) and fast t_rr (290 ns) minimize reverse recovery losses in secondary-side synchronous rectification, though its 620 V rating makes it more suitable for primary-side or high-input-voltage secondary-side applications.