STMicroelectronics STD5N95K5

Overview

STD5N95K5 from STMicroelectronics is a high-voltage N-channel Power MOSFET using MDmesh K5 vertical structure technology, rated for 950 V V_DS, 2.5 Ω max R_DS(on) at 10 V V_GS, and 3.5 A continuous drain current at T_C = 25 °C. It delivers ultra-low gate charge (12.5 nC), 100% avalanche tested performance, and Zener-protected gate, targeting high-efficiency flyback and resonant converters in industrial power supplies.

For engineers reviewing the STD5N95K5 datasheet, STD5N95K5 pinout, STD5N95K5 application, or STD5N95K5 equivalent, key selection criteria include its 950 V breakdown voltage, 2.5 Ω on-resistance, 12.5 nC total gate charge, 1.47 °C/W junction-to-case thermal resistance, and DPAK (TO-252) package compatibility with FR-4 PCB layouts.

Technical Context

This device implements ST's MDmesh K5 proprietary vertical superjunction architecture to minimize specific on-resistance (R_{DS(on)} × area) and figure of merit (FoM). Its optimized cell layout enables 950 V blocking capability while maintaining low capacitance (Ciss = 220 pF, Coss = 17 pF) and fast switching (td(off) = 32 ns, tf = 25 ns).}

The integrated Zener-protected gate ensures ±30 V V_GS tolerance, and the source-drain diode supports self-commutated topologies with 330 ns reverse recovery time (T_J = 25 °C) and 2.2 µC Q_rr. Avalanche ruggedness is validated to 1 A repetitive I_AR and 70 mJ E_AS under defined test conditions.

Key Specifications

Pinout & Package

DPAK (TO-252) package: 3-terminal surface-mount outline with exposed drain tab (Pin 2/TAB) for thermal and electrical connection. Standard footprint per Figure 21 (DS9663 Rev 5, p.12), compatible with automated reflow assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Compared with STP5N95K5, STD5N95K5 trades 0.47 °C/W higher junction-to-case resistance for SMT manufacturability and lower profile; versus FDPF10N95, it offers superior gate ruggedness and lower switching loss at the cost of reduced current headroom.

Availability

STD5N95K5 is available at Aetrix Electronics and suitable for industrial flyback converters, AC-DC adapters, and LED driver power stages requiring stable component supply, consistent parametric performance, and long-term production continuity.

Supply support for STD5N95K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STD5N95K5 belongs to ST's MDmesh K5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-power-density offline SMPS and resonant converters where low R_DS(on) × Q_g FoM is critical.

FAQ

What is the maximum safe operating voltage for STD5N95K5 in continuous DC operation?

The absolute maximum V_DS is 950 V, verified by V(BR)_DSS testing at 1 mA drain current. For reliable long-term operation, ST recommends limiting steady-state V_DS to ≤80% of rating (760 V) to accommodate voltage spikes and derating across temperature and lifetime.

Does STD5N95K5 require external gate protection when driven by a standard 15 V PWM controller?

No external gate protection is required. The integrated Zener diode clamps gate-source voltage to ±30 V, fully covering typical 15 V gate drivers with margin. However, a 10–22 Ω series gate resistor is recommended to dampen ringing and limit peak current during fast transitions.

Can STD5N95K5 replace STF5N95K5 in an existing DPAK footprint design?

Yes-STD5N95K5 uses the same DPAK (TO-252) type A2 package as STF5N95K5, with identical mechanical dimensions, pinout (G-D-S), and thermal pad layout. Electrical parameters are identical; only the part marking and packaging differ (tape-and-reel vs. tube).

What is the minimum PCB copper area needed to achieve the published R_thJA of 50 °C/W?

The 50 °C/W R_thJA value assumes mounting on 1 inch² (645 mm²) of 2 oz copper on FR-4 board. Reducing copper area increases thermal resistance nonlinearly; for 0.5 inch², R_thJA rises to ~75 °C/W. Thermal vias under the drain tab are strongly recommended to improve heat spreading.