STMicroelectronics STD5NK52ZD
- Part No.:
- STD5NK52ZD
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
STD5NK52ZD.pdf
- Description:
- MOSFET N-CH 520V 4.4A DPAK
- Quantity:
- Payment:

- Shipping:

Inventory:2,454
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Product details
Overview
STD5NK52ZD from STMicroelectronics is a Zener-protected N-channel SuperMESH Power MOSFET rated for 520 V drain-source voltage, 1.22 Ω typical RDS(on), and 4.4 A continuous drain current at TC = 25 °C. It delivers high dv/dt capability (15 V/ns), low gate charge (16.9 nC), and 100% avalanche tested ruggedness for hard-switching flyback and SMPS primary-side switching.
For engineers reviewing the STD5NK52ZD datasheet, STD5NK52ZD pinout, STD5NK52ZD application, or STD5NK52ZD equivalent, key selection criteria include its Zener-protected gate, 170 mJ single-pulse avalanche energy, TO-220 package thermal resistance (RthJC = 1.78 °C/W), and optimized capacitance profile (Ciss = 529 pF, Crss = 13.4 pF).
Technical Context
This device implements ST's SuperMESH process - an evolution of PowerMESH - to simultaneously reduce RDS(on) and intrinsic capacitance while maintaining high-voltage robustness. Its Zener-protected gate structure enables enhanced ESD immunity (2.8 kV HBM) and reliable operation in noisy industrial environments.
The MOSFET features a fast, soft-recovery body diode (trr = 97.7 ns at TJ = 25 °C) and is characterized for unclamped inductive switching up to 4.4 A, with guaranteed repetitive avalanche capability under defined conditions (IAR = 4.4 A, EAS = 170 mJ).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 520 V - Supports primary-side switching in offline SMPS up to 380 V AC mains with margin. |
| RDS(on) max | 1.5 Ω - Limits conduction loss to ≤30 W at 4.4 A, enabling thermally constrained TO-220 layouts. |
| Qg | 16.9 nC - Enables efficient 100–500 kHz switching with moderate gate drive strength (e.g., 1 A peak). |
| dv/dt rating | 15 V/ns - Sustains rapid voltage transients during hard commutation without spurious turn-on. |
| EAS | 170 mJ - Absorbs energy from inductive spikes without failure in unclamped inductive load tests. |
| Coss eq. | 11 pF - Reduces capacitive switching loss and improves efficiency in resonant topologies. |
| TJ range | −55 to +150 °C - Qualified for industrial and extended-temperature power supply designs. |
Pinout & Package
STD5NK52ZD is housed in a standard TO-220 type A package with isolated tab (drain-connected). The case is electrically connected to the drain terminal, requiring proper insulation when mounted to heatsinks.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1: Gate (G) | Control electrode | Zener-protected input; requires ≤±30 V drive; 16.9 nC total charge for full enhancement. |
| 2: Drain (D) / Tab | High-voltage power output | Connected to metal tab; must be insulated from chassis; carries full load current and avalanche energy. |
| 3: Source (S) | Power return reference | Low-side switching node; referenced to control ground; supports 4.4 A continuous conduction. |
Key Features
| Feature | Design Value |
|---|---|
| Zener-protected gate | Integrated 30 V Zener clamps gate-source voltage, eliminating need for external protection in most applications. |
| 100% avalanche tested | Every unit validated for single-pulse avalanche energy ≥170 mJ at TJ = 25 °C, ensuring field reliability. |
| Extremely high dv/dt capability | Rated 15 V/ns with ISD ≤ 4.4 A and di/dt ≤ 200 A/μs - prevents false triggering in high-noise converters. |
| Low intrinsic capacitance | Ciss = 529 pF, Crss = 13.4 pF - minimizes Miller effect and enables stable high-frequency gate drive. |
| Improved ESD capability | 2.8 kV HBM rating - exceeds JEDEC JS-001 Class 2, reducing handling sensitivity and board-level failures. |
Applications
| AC-DC Adapter Primary Switch | Industrial Flyback Converter |
|---|---|
|
Use Scenario: 65 W universal-input offline adapter with 65–130 kHz fixed-frequency flyback topology. IC Role / Device Role / Timing Role: Main high-side switch in primary winding; handles 520 V blocking and 4.4 A peak current. Use Value: Zener protection eliminates external gate clamp; 170 mJ EAS absorbs leakage inductance spikes without snubber redesign. |
Use Scenario: 100 W industrial power supply operating in harsh ambient (−40 to +85 °C) with wide line variation. IC Role / Device Role / Timing Role: Primary-side switching element in discontinuous conduction mode (DCM) flyback. Use Value: 15 V/ns dv/dt rating prevents false turn-on during transformer reset; TO-220 package enables direct heatsink mounting for thermal stability. |
| LED Driver Bulk Switch | UPS Inverter Stage |
|
Use Scenario: Non-isolated buck-boost LED driver for street lighting, accepting 277 V AC input. IC Role / Device Role / Timing Role: High-voltage switching transistor controlling LED string current via PWM dimming. Use Value: Low Coss eq. (11 pF) reduces switching loss at 100–200 kHz; soft-recovery body diode minimizes EMI during freewheeling. |
Use Scenario: DC-AC inverter stage in line-interactive UPS, switching battery-derived 350–400 V DC into modified sine wave. IC Role / Device Role / Timing Role: Half-bridge high-side switch in push-pull configuration driving transformer primary. Use Value: Guaranteed avalanche ruggedness allows safe operation during short-circuit or overload events without desaturation detection circuitry. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP5NK52Z | No integrated Zener protection; RDS(on) max = 1.6 Ω; lower ESD rating (2.0 kV HBM). | Suitable only where external gate protection is implemented; less robust in uncontrolled ESD environments. | Select when cost sensitivity outweighs gate protection requirement and layout includes discrete Zener/clamp. |
| FQP5N50CTU | 500 V rating (vs. 520 V); RDS(on) typ = 1.4 Ω; no avalanche rating published; Ciss = 620 pF. | Limited to ≤265 V AC inputs; lacks guaranteed avalanche performance for inductive fault tolerance. | Acceptable for lower-voltage, non-avalanche-critical designs where gate drive timing and loss targets align. |
Compared with STP5NK52Z and FQP5N50CTU, STD5NK52ZD provides superior system-level robustness through factory-verified avalanche energy, integrated gate Zener, and higher dv/dt immunity - critical for unattended industrial power supplies where field failure modes must be eliminated.
Availability
STD5NK52ZD is available at Aetrix Electronics and suitable for AC-DC adapters, industrial flyback converters, LED drivers, and UPS inverter stages requiring stable component supply, long-lifecycle support, and guaranteed avalanche-rated MOSFETs.
Supply support for STD5NK52ZD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive ICs.
STD5NK52ZD belongs to ST's SuperMESH Power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline switching power supplies demanding ruggedness, low gate charge, and simplified protection design.
FAQ
Is STD5NK52ZD pin-compatible with STP5NK52ZD?
Yes - both use identical TO-220 package pinout (G-D-S) and share the same mechanical footprint and thermal interface. However, STD5NK52ZD includes integrated gate Zener protection not present in STP5NK52ZD, so external gate clamping may be omitted in new designs using STD5NK52ZD.
What is the maximum recommended gate resistor for 250 kHz switching?
A 10 Ω gate resistor is recommended for 250 kHz operation with 1 A peak gate driver, balancing switching speed (td(on) ≈ 11.4 ns, tf ≈ 15 ns) against ringing and EMI. Lower values (≤5 Ω) increase dV/dt stress; higher values (>22 Ω) degrade efficiency due to prolonged transition times.
Does STD5NK52ZD require a heatsink in a 4.4 A continuous application?
Yes - at 4.4 A and RDS(on) = 1.5 Ω, conduction loss reaches ~29 W. With RthJC = 1.78 °C/W and ambient ≤50 °C, a heatsink with ≤10 °C/W RthHA is required to maintain TJ ≤ 150 °C. Derating to 2.7 A at TC = 100 °C reflects thermal limits without forced cooling.
Can STD5NK52ZD replace STD5NK52Z in existing designs?
Yes - STD5NK52ZD is a direct replacement for STD5NK52Z (same marking, same specs), with identical electrical ratings and package. The 'D' suffix denotes updated revision per DS4341 Rev 6 (Jan 2026), including revised TO-220 mechanical data and removed obsolete variants - no design changes needed.
STD5NK52ZD Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- SuperMESH™
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 520 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.5Ohm @ 2.2A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs:
- 16.9 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 529 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 70W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
STD5NK52ZD FAQ
1.How can I place an order for STD5NK52ZD through Aetrix?
Please submit a Request for Quotation (RFQ) for STD5NK52ZD on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STD5NK52ZD reliable?
The price and inventory of STD5NK52ZD are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD5NK52ZD is usually 5 days.
3.What payment methods are accepted for STD5NK52ZD?
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4.How is shipping managed for STD5NK52ZD?
STD5NK52ZD orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STD5NK52ZD order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STD5NK52ZD?
For technical support, including STD5NK52ZD datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD5NK52ZD requirements.
6.How does Aetrix verify that STD5NK52ZD is sourced from the original manufacturer or authorized distributors?
All STD5NK52ZD products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD5NK52ZD meets industry standards.
7.What is the process for return or replacement of STD5NK52ZD?
All STD5NK52ZD units undergo pre-shipment inspection (PSI). If there is an issue with STD5NK52ZD, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STD5NK52ZD part is unused and in its original packaging.
Return procedure for STD5NK52ZD:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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