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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD5NM50T4

Name: STD5NM50T4
Brand: STMicroelectronics
SKU: STD5NM50T4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD5NM50T4

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD5NM50T4.pdf

Description:: MOSFET N-CH 500V 7.5A DPAK

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Product details

Overview

STD5NM50T4 from STMicroelectronics is an N-channel 500 V, 7.5 A MDmesh™ Power MOSFET in DPAK (TO-252) package with R_DS(on) = 0.7 Ω (typ), 100% avalanche tested, and 15 V/ns dv/dt capability. It serves as a high-voltage switching element in offline SMPS primary-side power stages, PFC circuits, and industrial DC-DC converters.

For engineers reviewing the STD5NM50T4 datasheet, STD5NM50T4 pinout, STD5NM50T4 application, or STD5NM50T4 equivalent, key selection criteria include its 500 V V_DSS, low 13 nC total gate charge, 1.25 °C/W R_thj-case, robust 300 mJ single-pulse avalanche energy, and diode recovery performance (t_rr = 185 ns @ 25°C).

Technical Context

This MOSFET employs ST's MDmesh™ technology-combining Multiple Drain process and PowerMESH™ horizontal layout-to achieve low on-resistance while maintaining high voltage ruggedness. Its internal structure enables stable operation under high dv/dt stress and unclamped inductive switching conditions.

The device integrates a fast-recovery body diode (t_rr = 185 ns, Q_rr = 1.1 μC at 25°C) and supports hard-switched topologies up to 500 V bus voltage. Gate threshold voltage is tightly controlled (3–5 V), and dynamic parameters-including C_iss = 415 pF, C_oss = 88 pF, and C_rss = 12 pF-are optimized for high-frequency ZVS/ZCS compatibility.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	500 V - supports 400 V AC mains-derived DC bus with margin for surge and ringing
R_DS(on)	0.7 Ω (typ) - enables <7.5 W conduction loss at 7.5 A, critical for thermal management in compact designs
I_D (continuous)	7.5 A @ T_C = 25°C - defines maximum steady-state current with heatsink
Q_g	13 nC - determines gate driver power requirement and switching speed in 100–500 kHz applications
E_AS	300 mJ - ensures reliable operation during unclamped inductive turn-off events without external snubbers
t_rr	185 ns @ 25°C - limits reverse recovery losses and EMI in bridge-leg configurations
R_thj-case	1.25 °C/W - allows direct mounting to PCB copper or small heatsinks for ≤100 W dissipation

Pinout & Package

DPAK (TO-252) package: surface-mount, 3-pin, exposed drain pad for thermal and electrical connection. Standard footprint compatible with IPC-7351B DPAK-3 land pattern.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Receives 10 V logic-level drive; requires low-impedance gate driver due to 3 Ω gate resistance
2 (Drain)	High-voltage output node	Connected to primary winding or DC bus; electrically tied to exposed backside metal pad
3 (Source)	Power return / reference	Serves as local ground for gate drive; carries full load current and diode reverse recovery current

Key Features

Feature	Design Value
MDmesh™ technology	Enables 0.7 Ω R_DS(on) at 500 V rating-reducing conduction loss by ~30% vs. conventional planar MOSFETs
100% avalanche tested	Guarantees minimum 2.5 A repetitive avalanche current and 300 mJ single-pulse energy handling
Low C_oss (88 pF)	Reduces turn-off switching loss and improves light-load efficiency in resonant topologies
High dv/dt immunity (15 V/ns)	Prevents false turn-on in high-noise environments such as motor drives and industrial inverters
Tight V_GS(th) distribution (3–5 V)	Ensures consistent turn-on timing across production lots, simplifying gate drive design

Applications

Server PSU Primary Switch

Industrial PFC Boost Stage

Use Scenario: High-density 1U server power supply operating at 100–300 kHz with universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: Primary-side switching transistor in LLC resonant half-bridge, handling 500 V DC link and 7.5 A peak current.

Use Value: Low R_DS(on) and 13 nC Q_g reduce both conduction and switching losses, enabling >96% efficiency at full load.

Use Scenario: Active boost PFC stage in factory automation PLC power module with 400 V DC output.

IC Role / Device Role / Timing Role: Fast-switching switch in continuous conduction mode (CCM) boost converter, operating at 65 kHz.

Use Value: Robust body diode (t_rr = 185 ns) minimizes crossover loss and EMI during zero-current switching transitions.

AC-DC Adapter for Medical Equipment

UPS Inverter Half-Bridge

Use Scenario: Compact 65 W medical-grade AC-DC adapter requiring reinforced isolation and low leakage.

IC Role / Device Role / Timing Role: Primary-side switch in flyback topology with 500 V clamp and 7.5 A peak current rating.

Use Value: 100% avalanche testing ensures reliability under output short-circuit and line surge conditions per IEC 60601-1.

Use Scenario: 1 kVA online UPS inverter stage converting 400 V DC bus to 230 V AC output.

IC Role / Device Role / Timing Role: High-side switch in 16 kHz hard-switched H-bridge, subjected to high dv/dt and inductive kickback.

Use Value: 15 V/ns dv/dt rating and 1.25 °C/W R_thj-case prevent spurious turn-on and enable direct PCB thermal coupling without bulky heatsinks.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK50ZFP	R_DS(on) = 0.95 Ω (higher), Q_g = 16 nC, TO-220FP package	Larger footprint, higher thermal resistance (R_thj-case = 1.5 °C/W), no tape-and-reel option	Preferred where through-hole assembly or higher surge margin is required; not suitable for space-constrained DPAK layouts.
FDPF5N50NZ	R_DS(on) = 0.9 Ω, Q_g = 14 nC, DPAK-3, lower E_AS (220 mJ)	Lower avalanche ruggedness; not 100% avalanche tested per datasheet	Acceptable for non-critical consumer SMPS but not recommended for industrial or medical systems requiring guaranteed avalanche endurance.

Compared with STP5NK50ZFP and FDPF5N50NZ, STD5NM50T4 delivers superior power density via lower R_DS(on) and gate charge, tighter V_GS(th) control, and verified avalanche robustness-making it optimal for miniaturized, high-reliability 500 V switching designs.

Availability

STD5NM50T4 is available at Aetrix Electronics and suitable for server PSUs, industrial PFC modules, medical AC-DC adapters, and UPS inverter stages requiring stable component supply and long-term manufacturability.

Supply support for STD5NM50T4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs, discrete devices, and MEMS sensors for automotive, industrial, and power applications.

The MDmesh™ Power MOSFET product line targets high-efficiency, high-voltage power conversion-specifically engineered to replace older planar technologies in SMPS, PFC, lighting ballasts, and motor control with improved R_DS(on)/area and ruggedness.

FAQ

What is the maximum safe operating temperature for STD5NM50T4?

The absolute maximum junction temperature is 150°C, with derating beginning at T_C = 25°C. At case temperature of 100°C, the continuous drain current drops to 4.7 A. Thermal design must ensure R_thj-case ≤ 1.25 °C/W and maintain T_j ≤ 130°C for 10-year reliability in industrial applications.

Does STD5NM50T4 require a negative gate turn-off voltage?

No. STD5NM50T4 operates with 0 V to +10 V gate drive and does not require negative bias. Its ±30 V V_GS rating supports standard 12 V gate drivers, but 10 V is sufficient for full enhancement. Negative voltage is unnecessary due to tight V_GS(th) distribution and high dv/dt immunity.

Can STD5NM50T4 be used in synchronous rectification?

No. STD5NM50T4 is optimized as a high-side or primary-side switch-not a low-side synchronous rectifier. Its body diode t_rr and Q_rr are specified for freewheeling, not bidirectional conduction. For SR applications, ST recommends dedicated low-V_F trench MOSFETs like STL10DN10LH6.

Is the STD5NM50T4 RoHS compliant and halogen-free?

Yes. STD5NM50T4 complies with EU RoHS Directive 2011/65/EU and is manufactured as a halogen-free device per IEC 61249-2-21. The "T4" suffix denotes tape-and-reel packaging meeting J-STD-020 moisture sensitivity level 1 (MSL-1), with lead-free termination finish (SnAgCu).

STD5NM50T4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 7.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 800mOhm @ 2.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 415 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 100W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD5NM50T4 FAQ

1.How can I place an order for STD5NM50T4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD5NM50T4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD5NM50T4 reliable?

The price and inventory of STD5NM50T4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD5NM50T4 is usually 5 days.

3.What payment methods are accepted for STD5NM50T4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD5NM50T4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD5NM50T4?

STD5NM50T4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD5NM50T4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD5NM50T4?

For technical support, including STD5NM50T4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD5NM50T4 requirements.

6.How does Aetrix verify that STD5NM50T4 is sourced from the original manufacturer or authorized distributors?

All STD5NM50T4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD5NM50T4 meets industry standards.

7.What is the process for return or replacement of STD5NM50T4?

All STD5NM50T4 units undergo pre-shipment inspection (PSI). If there is an issue with STD5NM50T4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD5NM50T4 part is unused and in its original packaging.

Return procedure for STD5NM50T4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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