My Inquiry
My Account
STMicroelectronics STD5NM60-1
- Part No.:
- STD5NM60-1
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Datasheet:
-
STD5NM60-1.pdf
- Description:
- MOSFET N-CH 600V 5A IPAK
- Quantity:
- Payment:
- Shipping:
Inventory:62
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
STD5NM60-1 from STMicroelectronics is an N-channel 600 V, 0.9 Ω typ. (1.0 Ω max.), 5 A Power MOSFET in DPAK (TO-252) package, built on MDmesh™ technology for high-voltage switching. It delivers low gate charge (13 nC), high dv/dt immunity (15 V/ns), and 100% avalanche-tested ruggedness-used in offline SMPS, PFC stages, and industrial motor drives.
For engineers reviewing the STD5NM60-1 datasheet, STD5NM60-1 pinout, STD5NM60-1 application, or STD5NM60-1 equivalent, key selection criteria include RDS(on) at 10 V, unclamped inductive switching capability (EAS = 200 mJ), diode recovery performance (Qrr = 1.95 µC), and thermal resistance (RthJC = 1.3 °C/W).
Technical Context
This device employs ST's MDmesh™ multi-drain process with PowerMESH™ horizontal layout to achieve ultra-low RDS(on) while maintaining high breakdown voltage and fast switching. Its strip-based cell design enables superior dynamic performance versus conventional planar MOSFETs.
The integrated body diode features low forward voltage (VSD = 1.5 V @ 5 A) and controlled reverse recovery (trr = 300 ns @ 150 °C), making it suitable for hard-switched topologies where diode commutation stress is critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - supports 400 V AC mains-derived DC bus with 50% safety margin for surge handling |
| RDS(on) max | 1.0 Ω @ VGS = 10 V, ID = 2.5 A - determines conduction loss in continuous 5 A operation |
| Qg | 13 nC - defines gate drive power requirement and switching speed under 4.7 Ω gate resistor |
| EAS | 200 mJ - enables robust unclamped inductive switching without external snubbers |
| tr/tf | 10 ns / 10 ns - supports >100 kHz switching in flyback and LLC resonant converters |
| RthJC | 1.3 °C/W - allows 96 W dissipation with ≤125 °C junction rise over case at 25 °C ambient |
| Ciss | 400 pF - impacts Miller effect and gate driver stability in high-side configurations |
Pinout & Package
DPAK (TO-252) package: surface-mount, single-ended heat sink via exposed drain tab; thermally optimized for PCB copper area mounting.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| TAB (Pin 2) | Drain | Exposed metal pad - primary thermal path and high-current output node; must be soldered to ≥1 in² 2 oz Cu |
| Pin 1 | Gate | High-impedance control input; requires <100 nC gate charge for full enhancement; sensitive to ESD |
| Pin 3 | Source | Reference node for gate drive and current sensing; connects to power ground or shunt resistor |
Key Features
| Feature | Design Value |
|---|---|
| MDmesh™ technology | Enables 600 V rating with 0.9 Ω RDS(on), reducing conduction loss by ~35% vs. legacy planar MOSFETs |
| 100% avalanche tested | Guarantees single-pulse EAS = 200 mJ and repetitive IAS = 2.5 A without derating |
| Low Ciss/Coss ratio | Ciss = 400 pF, Coss = 100 pF - improves ZVS compatibility and reduces switching loss in resonant topologies |
| Fast body diode | trr = 300 ns, Qrr = 1.95 µC - minimizes diode-induced voltage spikes and EMI in bridge-leg commutation |
Applications
| AC-DC Adapter | Industrial Motor Starter |
|---|---|
|
Use Scenario: 65 W universal-input offline flyback converter with primary-side regulation. IC Role / Device Role / Timing Role: Main switch controlling energy transfer during 65–130 kHz PWM cycles; handles 5 A peak drain current. Use Value: Low RDS(on) and 13 nC Qg reduce both conduction and gate drive losses, enabling >88% efficiency at full load. |
Use Scenario: 3-phase inverter stage for 0.75 kW BLDC motor in HVAC fan control. IC Role / Device Role / Timing Role: High-side switch in half-bridge leg; commutates 5 A RMS phase current with 15 V/ns dv/dt stress. Use Value: 15 V/ns dv/dt rating and avalanche ruggedness prevent false turn-on and failure during inductive kickback events. |
| LED Streetlight Driver | UPS Inverter Stage |
|
Use Scenario: Constant-current buck-boost LED driver for 100 W outdoor luminaires. IC Role / Device Role / Timing Role: Synchronous rectifier and main switch in hybrid topology; operates at 100 kHz with 5 A pulsed current. Use Value: Low Coss (100 pF) and fast tf (10 ns) minimize dead-time losses and improve power density. |
Use Scenario: 1 kVA line-interactive UPS with bidirectional DC-AC inverter using H-bridge configuration. IC Role / Device Role / Timing Role: Low-side switch handling 5 A continuous and 20 A pulsed (IDM) currents during battery backup mode. Use Value: 20 A pulsed rating and 1.3 °C/W RthJC support short-term overload without thermal shutdown. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP5NK60ZFP | Zener-protected gate; RDS(on) = 1.2 Ω max; TO-220FP package | Higher thermal resistance (RthJC = 2.5 °C/W); requires heatsink for >3 A continuous | Preferred where gate protection against transients is critical and board space permits through-hole mounting |
| FQP5N60C | Standard planar MOSFET; RDS(on) = 1.4 Ω max; higher Qg (22 nC) | No avalanche rating specified; lower dv/dt immunity (8 V/ns) | Suitable for cost-sensitive, non-ruggedized designs with lower switching frequency (<50 kHz) |
Compared with STP5NK60ZFP and FQP5N60C, STD5NM60-1 offers superior RDS(on)/Qg figure-of-merit, guaranteed avalanche capability, and surface-mount DPAK packaging-making it optimal for compact, high-reliability 600 V SMPS and motor control.
Availability
STD5NM60-1 is available at Aetrix Electronics and suitable for offline AC-DC converters, industrial motor starters, LED streetlight drivers, and UPS inverter stages requiring stable component supply and long-lifecycle support.
Supply support for STD5NM60-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.
STD5NM60-1 belongs to ST's MDmesh™ high-voltage Power MOSFET product line, engineered specifically for energy-efficient, high-reliability switching in 400–600 V DC bus applications such as SMPS, PFC, and motor drives.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
The maximum continuous drain current (ID) for STD5NM60-1 is 3.1 A at TC = 100 °C, as defined in the absolute maximum ratings table. This reflects thermal derating due to reduced safe operating area at elevated temperatures, not device failure-operation beyond this requires pulse-width limitation or active cooling.
Does STD5NM60-1 have an integrated gate protection diode?
No, STD5NM60-1 does not integrate a gate-source Zener diode. Its gate-source voltage rating is ±30 V, and external gate protection (e.g., 18 V TVS) is recommended in noisy environments. Unlike STP5NK60ZFP, this part relies on layout-level ESD control and proper gate drive clamping.
Can STD5NM60-1 replace STD5NM60T4 in existing designs?
Yes-STD5NM60-1 and STD5NM60T4 share identical electrical specifications, pinout, package (DPAK), and thermal characteristics per DS1949 Rev 18. The "-1" suffix denotes a minor manufacturing revision with no functional or parametric impact; both are drop-in replacements in layout and schematic.
What is the recommended PCB footprint for thermal performance?
The recommended DPAK footprint per ST's FP_0068772_34 outline uses a 6.0 × 6.6 mm thermal pad with ≥1 in² of 2 oz copper connected via ≥6 thermal vias (0.3 mm diameter, 0.8 mm pitch). This achieves the specified RthJA = 50 °C/W and supports full 96 W power dissipation at TC = 25 °C.
STD5NM60-1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™
- Package/Case:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1Ohm @ 2.5A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 18 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 400 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 96W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- IPAK
STD5NM60-1 FAQ
1.How can I place an order for STD5NM60-1 through Aetrix?
Please submit a Request for Quotation (RFQ) for STD5NM60-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STD5NM60-1 reliable?
The price and inventory of STD5NM60-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD5NM60-1 is usually 5 days.
3.What payment methods are accepted for STD5NM60-1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD5NM60-1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STD5NM60-1?
STD5NM60-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STD5NM60-1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STD5NM60-1?
For technical support, including STD5NM60-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD5NM60-1 requirements.
6.How does Aetrix verify that STD5NM60-1 is sourced from the original manufacturer or authorized distributors?
All STD5NM60-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD5NM60-1 meets industry standards.
7.What is the process for return or replacement of STD5NM60-1?
All STD5NM60-1 units undergo pre-shipment inspection (PSI). If there is an issue with STD5NM60-1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STD5NM60-1 part is unused and in its original packaging.
Return procedure for STD5NM60-1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
STD5NM60-1 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
