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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD60N55F3

Name: STD60N55F3
Brand: STMicroelectronics
SKU: STD60N55F3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD60N55F3

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD60N55F3.pdf

Description:: MOSFET N-CH 55V 80A DPAK

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Product details

Overview

STD60N55F3 from STMicroelectronics is an N-channel 55 V, 6.5 mΩ (typ), 80 A, 110 W DPAK Power MOSFET with standard threshold drive and 100% avalanche tested ruggedness. It delivers low conduction loss and fast switching in high-current DC-DC converters, motor drives, and power supply synchronous rectification stages.

For engineers reviewing the STD60N55F3 datasheet, STD60N55F3 pinout, STD60N55F3 application, or STD60N55F3 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, safe operating area under pulsed ID_M = 320 A, thermal resistance R_thj-pcb = 50 °C/W on FR-4, and unclamped inductive switching robustness (E_AS = 390 mJ).

Technical Context

This STripFET™ III device uses trench-gate vertical DMOS architecture optimized for minimizing R_DS(on) while maintaining strong dv/dt immunity (11 V/ns) and low gate charge (Q_g = 33.5 nC typ). Its body diode exhibits t_rr = 47 ns and Q_rr = 87 nC under hard-switched inductive conditions.

The DPAK package enables surface-mount assembly with direct PCB heat spreading, supporting junction-to-PCB thermal resistance of 50 °C/W - critical for compact, thermally constrained designs like server VRMs and industrial SMPS where heatsink space is limited.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum drain-source blocking voltage; suitable for 48 V bus systems with margin.
R_DS(on)	6.5 mΩ (typ) @ V_GS = 10 V - Enables <1 W conduction loss at 40 A continuous current.
I_D (T_C = 25°C)	80 A - Continuous drain current rating at case temperature 25°C; derates to 56 A at 100°C.
E_AS	390 mJ - Single-pulse avalanche energy; ensures reliability during inductive turn-off transients.
Q_g	33.5 nC (typ) - Total gate charge; determines driver power requirement and switching speed control.
t_r/t_f	20/11.5 ns (typ) - Fast rise/fall times with 4.7 Ω gate resistor; supports >500 kHz switching.
R_thj-pcb	50 °C/W - Junction-to-PCB thermal resistance on 1 in² 2 oz Cu; defines board-level thermal design baseline.

Pinout & Package

STD60N55F3 is housed in a DPAK (TO-252) surface-mount package with three terminals: Gate (G), Drain (D), and Source (S). The exposed drain pad provides primary thermal path to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires 2–4 V threshold, driven to 10 V for full enhancement and minimal R_DS(on).
2 (D)	Drain	Main high-side switching node; connected to exposed metal tab for thermal and electrical conduction to PCB.
3 (S)	Source	Power return path and reference for gate drive; tied to power ground in low-side configurations.

Key Features

Feature	Design Value
STripFET™ III process	Enables 6.5 mΩ R_DS(on) in DPAK - 30% lower than prior-generation equivalents at same footprint.
100% avalanche rated	Guarantees operation under unclamped inductive switching up to E_AS = 390 mJ without degradation.
Standard gate threshold	V_GS(th) = 2–4 V - Compatible with 3.3 V and 5 V logic-level drivers without level-shifting.
Low Q_gd/Q_g ratio	9.5/33.5 nC = 0.28 - Reduces Miller effect, improving hard-switching stability and dV/dt immunity.
ECOPACK® compliant	Meets RoHS and halogen-free requirements per ST's environmental packaging standards.

Applications

Server VRM High-Side Switch

Industrial DC-DC Converter

Use Scenario: Primary high-side switch in multiphase buck converter supplying CPU core voltage (0.8–1.2 V @ up to 200 A).

IC Role / Device Role / Timing Role: Synchronous rectifier switch operating at 300–600 kHz with precise dead-time control.

Use Value: 6.5 mΩ R_DS(on) minimizes I²R loss at high current; 50 °C/W R_thj-pcb enables direct PCB cooling without heatsink.

Use Scenario: Isolated forward or half-bridge primary-side switch in 48 V input industrial power supply (200–500 W).

IC Role / Device Role / Timing Role: Main power switch handling 80 A peak drain current with 100% avalanche tolerance.

Use Value: 390 mJ E_AS withstands transformer leakage energy; fast t_r/t_f supports high-frequency ZVS/ZCS topologies.

Motor Drive Half-Bridge

Telecom Rectifier Module

Use Scenario: Low-side switch in 24–48 V BLDC motor inverter driving fans, pumps, or actuators.

IC Role / Device Role / Timing Role: PWM-controlled power stage with integrated body diode conducting reverse recovery current.

Use Value: 47 ns t_rr and 87 nC Q_rr reduce switching loss and EMI during commutation; standard V_GS(th) simplifies gate driver design.

Use Scenario: Secondary-side synchronous rectifier in telecom -48 V rectifier module (3 kW system).

IC Role / Device Role / Timing Role: High-current, low-V_F replacement for Schottky diodes in LLC resonant output stage.

Use Value: 1.5 V V_SD at 65 A enables >96% efficiency; DPAK footprint allows dense layout with thermal vias to inner layers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFZ44NPBF	R_DS(on) = 28 mΩ @ 10 V; TO-220 package; no avalanche rating specified.	Limited to lower-current (<30 A) linear or low-frequency switching; lacks E_AS guarantee.	Choose only if cost-sensitive, low-power, non-avalanche-critical designs with heatsink mounting.
STP60N55F3	Same die, TO-220 package; R_thj-case = 1.36 °C/W vs. DPAK's 50 °C/W to PCB.	Better for forced-air-cooled, discrete heatsink-based systems; unsuitable for compact SMT-only layouts.	Select when thermal interface to external heatsink is preferred over PCB conduction, and through-hole assembly is acceptable.

Compared with IRFZ44NPBF, STD60N55F3 offers 4.3× lower R_DS(on) and guaranteed avalanche ruggedness; versus STP60N55F3, it trades lower thermal resistance to ambient for superior PCB-integrated thermal management in space-constrained SMT designs.

Availability

STD60N55F3 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, motor drive inverters, and telecom rectifier modules requiring stable component supply and long-term production continuity.

Supply support for STD60N55F3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STD60N55F3 belongs to the STripFET™ III Power MOSFET product line, engineered specifically for high-efficiency, high-current switching in compact surface-mount power supplies and motor controls.

FAQ

What is the maximum continuous drain current for STD60N55F3 at 100°C case temperature?

The maximum continuous drain current is 56 A at T_C = 100°C, as specified in Table 2 of the datasheet. This derating reflects thermal limits of the DPAK package and must be validated against actual PCB layout and airflow conditions.

Does STD60N55F3 require a gate resistor for reliable operation?

Yes - a gate resistor (typically 4.7 Ω, as used in switching characterization) is required to control dI/dt, suppress ringing, and limit peak gate current. Omitting it risks oscillation, shoot-through, or gate oxide stress during fast transitions.

Can STD60N55F3 be used in avalanche mode intentionally?

Yes - it is 100% avalanche tested with E_AS = 390 mJ at T_j = 25°C. Intentional use requires strict adherence to single-pulse energy limits, junction temperature monitoring, and avoidance of repetitive avalanche unless validated per application-specific stress testing.

Is the DPAK package lead-free and RoHS-compliant?

Yes - STD60N55F3 carries ECOPACK® certification, meeting RoHS Directive 2011/65/EU and being halogen-free per STMicroelectronics' environmental compliance program, as confirmed in Section 4 of the datasheet.

STD60N55F3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ III

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 8.5mOhm @ 32A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD60N55F3 FAQ

1.How can I place an order for STD60N55F3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD60N55F3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD60N55F3 reliable?

The price and inventory of STD60N55F3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD60N55F3 is usually 5 days.

3.What payment methods are accepted for STD60N55F3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD60N55F3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD60N55F3?

STD60N55F3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD60N55F3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD60N55F3?

For technical support, including STD60N55F3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD60N55F3 requirements.

6.How does Aetrix verify that STD60N55F3 is sourced from the original manufacturer or authorized distributors?

All STD60N55F3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD60N55F3 meets industry standards.

7.What is the process for return or replacement of STD60N55F3?

All STD60N55F3 units undergo pre-shipment inspection (PSI). If there is an issue with STD60N55F3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD60N55F3 part is unused and in its original packaging.

Return procedure for STD60N55F3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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