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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD60NF06T4

Name: STD60NF06T4
Brand: STMicroelectronics
SKU: STD60NF06T4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD60NF06T4

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD60NF06T4.pdf

Description:: MOSFET N-CH 60V 60A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STD60NF06T4 from STMicroelectronics is an N-channel 60 V, 60 A Power MOSFET in DPAK (TO-252) package, featuring 0.014 Ω typical R_DS(on), 49–66 nC total gate charge, and 4 V/ns dv/dt capability. It serves as a primary switch in isolated DC-DC converters for telecom and computing systems where low gate drive loss and robust avalanche performance are critical.

For engineers reviewing the STD60NF06T4 datasheet, STD60NF06T4 pinout, STD60NF06T4 application, or STD60NF06T4 equivalent, key selection criteria include its 1.36 °C/W junction-to-case thermal resistance, 350 mJ single-pulse avalanche energy, 73 ns reverse recovery time, and DPAK footprint compatibility with high-current PCB layouts.

Technical Context

This STripFET™ II device uses a planar trench-gate structure optimized for reduced input capacitance and gate charge-enabling fast switching with minimal driver power. Its 100% avalanche-tested ruggedness supports unclamped inductive load operation without external snubbers.

The MOSFET integrates a low-V_SD body diode (1.3 V at 60 A), enabling synchronous rectification in secondary-side applications. Thermal design leverages the exposed drain tab (Pin 2) for direct heatsinking, with R_thj-pcb = 50 °C/W on 1-inch² 2 oz copper.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Supports 48 V telecom bus and 54 V PoE++ systems with margin
R_DS(on) max	0.016 Ω - Limits conduction loss to ≤57.6 W at 60 A continuous (TC = 25 °C)
I_D cont @ TC=100°C	42 A - Enables sustained operation in compact, thermally constrained enclosures
Q_g	49–66 nC - Determines gate driver current requirement (~1.3 A peak for 50 ns turn-on)
E_AS	350 mJ - Withstands repetitive inductive energy spikes without failure
dv/dt rating	4 V/ns - Resists parasitic turn-on during high-speed hard-switching transitions
trr / Q_rr	73 ns / 182 nC - Reduces switching losses and EMI in flyback and LLC resonant topologies

Pinout & Package

The STD60NF06T4 uses a DPAK (TO-252) package with an exposed drain tab for thermal and electrical connection. Pin 1 is Gate, Pin 2 is Drain (tab), Pin 3 is Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate control terminal	Receives 10 V logic-level drive; requires <100 nA leakage current handling
Pin 2 (D, TAB)	Drain (exposed metal tab)	Primary heat path to PCB/heatsink; electrically connected to drain node
Pin 3 (S)	Source reference terminal	Serves as local ground return for gate drive and current sensing

Key Features

Feature	Design Value
STripFET™ II process	Reduces C_iss to 1810 pF and Crss to 125 pF-minimizing Miller effect and improving dV/dt immunity
100% avalanche tested	Guarantees 30 A repetitive avalanche current and 350 mJ single-pulse energy survival
Low gate charge	49–66 nC enables use with low-power gate drivers (e.g., STMicro's STL11N60M2)
Enhanced dv/dt capability	4 V/ns rating prevents false triggering in high-noise industrial motor drives and SMPS

Applications

Telecom DC-DC Converters

Server VRMs

Use Scenario: Primary-side switch in 48 V input, 12 V output isolated forward converter for base station power supplies.

IC Role / Device Role / Timing Role: High-side main switch operating at 200–500 kHz with zero-voltage switching assist.

Use Value: 0.014 Ω R_DS(on) reduces conduction loss by >30% vs. legacy 0.022 Ω devices at full load.

Use Scenario: Synchronous rectifier in multiphase buck converter supplying CPU core voltage (0.8–1.2 V).

IC Role / Device Role / Timing Role: Low-side switch with fast turn-off (20 ns fall time) to minimize shoot-through risk.

Use Value: 1.3 V V_SD and 73 ns trr reduce body-diode conduction loss and improve light-load efficiency.

Industrial Motor Drives

EV Onboard Chargers

Use Scenario: Half-bridge leg in 24–48 V BLDC inverter for HVAC blowers and pumps.

IC Role / Device Role / Timing Role: Low-side switching element subjected to high di/dt and inductive kickback.

Use Value: 4 V/ns dv/dt rating and 100% avalanche test ensure reliability under 200 A/μs transient conditions.

Use Scenario: Secondary-side switch in CLLC resonant DC-DC stage of 6.6 kW OBC.

IC Role / Device Role / Timing Role: High-frequency (300–500 kHz) synchronous rectifier with low Q_rr.

Use Value: 182 nC Q_rr cuts reverse recovery loss by ~40% versus standard 300 nC MOSFETs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V Power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFZ44NPBF	R_DS(on) = 0.028 Ω (higher), Q_g = 71 nC (higher), no avalanche rating	Lacks 100% avalanche test; unsuitable for unclamped inductive loads	Lower-cost option only for non-critical, low-stress linear or resistive switching
STP60NF06	Same die, TO-220 package; R_thj-case = 0.55 °C/W (better), but larger footprint	Requires mechanical heatsink; not suitable for space-constrained SMT designs	Preferred when thermal budget allows discrete heatsink mounting and board area permits

Compared with IRFZ44NPBF and STP60NF06, STD60NF06T4 delivers superior thermal performance per unit PCB area (R_thj-pcb = 50 °C/W), guaranteed avalanche ruggedness, and optimized gate charge for high-frequency SMT-based power stages-making it the preferred choice for dense, high-reliability telecom and server power modules.

Availability

STD60NF06T4 is available at Aetrix Electronics and suitable for telecom DC-DC converters, server VRMs, and industrial motor drives requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.

Supply support for STD60NF06T4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive ICs.

This device belongs to ST's STripFET™ II Power MOSFET product line-engineered specifically for high-efficiency, high-reliability switching power supplies in telecom infrastructure, computing, and industrial automation.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STD60NF06T4 supports 42 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS12568 Rev 1. This derating reflects thermal limits of the DPAK package and ensures safe operation within SOA boundaries under sustained high-temperature conditions.

Does this MOSFET require a gate resistor for stability?

Yes-a gate resistor (typically 4.7 Ω) is recommended to dampen ringing and control switching speed, as validated in Figure 11 and Table 5 of the datasheet. Without it, the 125 pF Crss and 1810 pF Ciss can cause oscillation during fast transitions, especially with high di/dt loads.

Can STD60NF06T4 be used in parallel configurations?

Yes-its positive temperature coefficient for R_DS(on) (shown in Figure 9) enables inherent current sharing. However, layout symmetry, matched gate drive paths, and individual source inductance balancing are required to avoid thermal runaway above 100 A aggregate current.

Is the drain tab electrically isolated from the PCB mounting pad?

No-the drain tab (Pin 2) is electrically connected to the drain terminal and must be isolated from other circuit nodes using insulating thermal pads or dielectric coatings if mounted to a grounded heatsink. Direct soldering to copper pour creates a drain-to-PCB short unless the pour is designated as drain potential.

STD60NF06T4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ II

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 16mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 66 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1810 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD60NF06T4 FAQ

1.How can I place an order for STD60NF06T4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD60NF06T4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD60NF06T4 reliable?

The price and inventory of STD60NF06T4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD60NF06T4 is usually 5 days.

3.What payment methods are accepted for STD60NF06T4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD60NF06T4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD60NF06T4?

STD60NF06T4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD60NF06T4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD60NF06T4?

For technical support, including STD60NF06T4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD60NF06T4 requirements.

6.How does Aetrix verify that STD60NF06T4 is sourced from the original manufacturer or authorized distributors?

All STD60NF06T4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD60NF06T4 meets industry standards.

7.What is the process for return or replacement of STD60NF06T4?

All STD60NF06T4 units undergo pre-shipment inspection (PSI). If there is an issue with STD60NF06T4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD60NF06T4 part is unused and in its original packaging.

Return procedure for STD60NF06T4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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