STMicroelectronics STD64N4F6AG

Overview

STD64N4F6AG from STMicroelectronics is an automotive-grade N-channel 40 V, 7 mΩ typ. R_DS(on), 54 A continuous drain current Power MOSFET in DPAK (TO-252) package, built on STripFET™ F6 trench-gate technology. It delivers low conduction loss and high avalanche ruggedness for 12 V battery-switching applications in engine control units and body electronics.

For engineers reviewing the STD64N4F6AG datasheet, STD64N4F6AG pinout, STD64N4F6AG application, or STD64N4F6AG equivalent, key selection criteria include its 2.5 °C/W junction-to-case thermal resistance, 44 nC total gate charge, AEC-Q101 qualification, and 180 mJ single-pulse avalanche energy rating.

Technical Context

This MOSFET employs a trench-gate STripFET™ F6 structure optimized for low R_DS(on) and fast switching. Its 7 mΩ typical on-resistance at V_GS = 10 V and 27 A enables efficient high-current DC switching in automotive power distribution networks.

The device supports robust unclamped inductive switching with 54 A repetitive avalanche current and 180 mJ single-pulse energy handling. Gate drive requirements are minimized by 44 nC total gate charge and low input capacitance (2415 pF), reducing driver losses in 12 V–40 V systems.

Key Specifications

Pinout & Package

STD64N4F6AG is housed in a DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection. The package features three terminals: Gate (G), Drain (D), and Source (S), with Drain electrically connected to the large back-side metal tab.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Compared with IRF640NPBF and STP60NF06, STD64N4F6AG provides superior current density (54 A in DPAK), guaranteed automotive qualification, and 180 mJ avalanche energy-making it the only option qualified for production ECU and BCM designs requiring zero-failure reliability.

Availability

STD64N4F6AG is available at Aetrix Electronics and suitable for engine control units, body control modules, and start-stop battery management systems requiring stable component supply across automotive production lifecycles.

Supply support for STD64N4F6AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

STD64N4F6AG belongs to ST's STripFET™ F6 automotive power MOSFET product line, engineered specifically for high-reliability 12 V battery-switching applications demanding AEC-Q101 compliance, low R_DS(on), and robust avalanche performance.

FAQ

Is STD64N4F6AG suitable for high-side switching configurations?

No-STD64N4F6AG is an N-channel MOSFET with source terminal referenced to ground in standard DPAK layout. For high-side switching, it requires a gate driver with floating supply or bootstrap circuitry to achieve V_GS ≥ 10 V above drain potential. Its 40 V V_DS rating limits use to ≤12 V systems with transient suppression.

What is the maximum PCB copper area required for thermal management at 54 A continuous current?

At 54 A continuous and T_case = 25 °C, the device dissipates 60 W. With R_thj-case = 2.5 °C/W and assuming 25 °C ambient, a minimum 1-inch² FR-4 board with 2 oz copper is required per datasheet Table 3. Additional thermal vias under the drain pad and internal copper planes improve performance beyond this baseline.

Does STD64N4F6AG include integrated ESD protection on the gate?

No-the datasheet does not specify integrated gate ESD protection. External Zener clamps (e.g., 12 V TVS) between gate and source are recommended in automotive environments to protect against ISO 10605 discharge events. Gate oxide withstands ±20 V per absolute maximum ratings, but real-world transients exceed this limit.

Can STD64N4F6AG be paralleled with identical units for higher current capacity?

Yes-its positive temperature coefficient of R_DS(on) (confirmed in Figure 10) ensures inherent current sharing when paralleled. Layout symmetry, matched gate drive impedance, and shared thermal mass are essential. Derating to 46 A per device at T_case = 100 °C is required per Table 2 for sustained operation.