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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD65N3LLH5

Name: STD65N3LLH5
Brand: STMicroelectronics
SKU: STD65N3LLH5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD65N3LLH5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD65N3LLH5.pdf

Description:: MOSFET N CH 30V 65A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STD65N3LLH5 from STMicroelectronics is an N-channel 30 V, 65 A Power MOSFET in DPAK (TO-252) package, featuring 6.9 mΩ R_DS(on) at V_GS = 10 V, 32.5 A, high avalanche ruggedness, and low gate charge (Q_g = 8 nC). It serves as a main switching device in DC-DC converters, motor drivers, and power supply synchronous rectifiers.

For engineers reviewing the STD65N3LLH5 datasheet, STD65N3LLH5 pinout, STD65N3LLH5 application, or STD65N3LLH5 equivalent, key selection criteria include on-resistance at 4.5 V drive, unclamped inductive switching capability, thermal resistance (R_thj-case = 3 °C/W), and SOA compliance at T_C = 100 °C.

Technical Context

This MOSFET uses ST's STripFET™ V process to optimize conduction and switching trade-offs: R_DS(on) × Q_g figure-of-merit is benchmarked for high-efficiency 30 V systems. Its gate threshold voltage (V_GS(th) = 1–3 V) ensures robust turn-on with standard logic-level drivers.

The device supports pulsed drain current up to 260 A and single-pulse avalanche energy (E_AS) rated under defined test conditions (T_j = 25 °C, I_D = 32.5 A, V_DD = 12 V). Its source-drain diode exhibits t_rr = 22 ns and Q_rr = 15 nC under 100 A/µs di/dt.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V nominal bus systems and automotive 12 V/24 V applications.
R_DS(on) max	6.9 mΩ @ V_GS = 10 V, I_D = 32.5 A - Enables <1 W conduction loss at 40 A continuous, critical for thermally constrained PCB layouts.
I_D cont	65 A @ T_C = 25 °C - Supports high-current load switching when mounted on copper heatsink or thermal pad.
Q_g	8 nC - Reduces gate driver power dissipation and enables fast switching (>1 MHz operation with appropriate gate resistor).
R_thj-case	3 °C/W - Allows junction temperature rise of only 150 °C at 50 W dissipation, supporting reliable operation up to T_j = 175 °C.
E_AS	TBD - Rated for unclamped inductive switching; actual value confirmed per JEDEC JESD24-11 test conditions (T_j = 25 °C, I_D = 32.5 A, V_DD = 12 V).
t_r/t_f	11.2 ns / 6 ns - Fast edge rates minimize switching losses in hard-switched topologies with 4.7 Ω gate resistor.

Pinout & Package

DPAK (TO-252) package with exposed drain pad for thermal and electrical connection; 3-terminal surface-mount configuration optimized for high-current PCB routing and thermal relief.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Power return path for load current	Internally connected to substrate; electrically tied to PCB ground plane for low-inductance return path.
2 (Gate)	Control terminal for channel modulation	High-impedance input requiring <100 nA leakage; sensitive to ESD; routed away from noisy power traces.
3 (Drain)	Main power output node	Exposed metal pad on underside - must be soldered to large copper area for thermal management and current conduction.

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FoM	Industry benchmark for 30 V MOSFETs - enables higher efficiency in high-frequency SMPS without sacrificing conduction loss.
High avalanche ruggedness	Rated for unclamped inductive switching - eliminates need for external snubbers in relay/motor drive flyback paths.
Logic-level gate drive compatibility	V_GS(th) range (1–3 V) ensures full enhancement with 3.3 V or 5 V microcontroller GPIOs.
Enhanced thermal performance	R_thj-case = 3 °C/W - delivers >80% of TO-220 thermal capability in surface-mount footprint.

Applications

DC-DC Synchronous Buck Converter

Automotive Body Control Module (BCM)

Use Scenario: High-efficiency 12 V to 3.3 V/5 V conversion for infotainment and ADAS subsystems.

IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve light-load efficiency.

Use Value: Achieves >94% peak efficiency at 20 A output due to 6.9 mΩ R_DS(on) and low Q_g-driven switching loss.

Use Scenario: Load switching for headlights, HVAC actuators, and window lift motors.

IC Role / Device Role: High-current power switch controlled by CAN/LIN interface MCU with integrated protection logic.

Use Value: Withstands 260 A pulsed loads and 150 °C junction temperature, meeting ISO 7637-2 pulse 5a surge requirements.

Industrial Motor Starter

Server VRM High-Side Switch

Use Scenario: Soft-start and overcurrent-protected 24 V DC motor control in factory automation.

IC Role / Device Role: Main H-bridge leg switch with integrated current-sense feedback via Kelvin source connection.

Use Value: Avalanche rating allows safe commutation during abrupt load disconnection without external clamping diodes.

Use Scenario: Multiphase buck converter high-side switch in 48 V to 1 V server CPU VRMs.

IC Role / Device Role: Fast-switching, low-R_DS(on) power stage element operating at >500 kHz with GaN-compatible gate drive.

Use Value: 8 nC Q_g and 11.2 ns t_r enable minimal dead-time loss while maintaining <10 mΩ effective on-resistance at 4.5 V drive.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PbF	R_DS(on) = 8.0 mΩ @ V_GS = 10 V; Q_g = 27 nC; TO-220 package	Higher conduction loss and gate drive power; through-hole mounting limits board density	Select when legacy through-hole assembly or higher avalanche margin (E_AS = 230 mJ) is prioritized over size and switching speed.
DMT6009LPS-13	R_DS(on) = 6.0 mΩ @ V_GS = 10 V; Q_g = 12.5 nC; PowerDI 3333 package	Lower R_DS(on) but higher Q_g; smaller thermal pad area increases R_thj-amb	Select when ultra-low on-resistance is critical and PCB layout allows enhanced thermal vias under smaller footprint.

Compared with IRL3803PbF and DMT6009LPS-13, STD65N3LLH5 offers best-in-class R_DS(on) × Q_g balance in DPAK, enabling higher power density and lower gate driver stress than TO-220 alternatives, while maintaining superior thermal dissipation versus smaller SMD packages.

Availability

STD65N3LLH5 is available at Aetrix Electronics and suitable for DC-DC converters, automotive body control modules, and industrial motor starters requiring stable component supply and long-term production continuity.

Supply support for STD65N3LLH5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for industrial, automotive, and consumer markets.

STD65N3LLH5 belongs to ST's STripFET™ V Power MOSFET product line, engineered specifically for high-efficiency, high-current switching in 12–30 V systems where low R_DS(on), fast switching, and ruggedness are co-optimized.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STD65N3LLH5 supports 46 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the official datasheet (Doc ID 17281 Rev 1). This derating reflects thermal limitations of the DPAK package and must be validated against actual PCB thermal design using R_thj-case = 3 °C/W.

Does this MOSFET support 3.3 V logic-level gate drive?

Yes - its gate threshold voltage (V_GS(th)) ranges from 1.0 V to 3.0 V, ensuring reliable turn-on with 3.3 V microcontroller outputs. However, full enhancement (low R_DS(on)) requires ≥4.5 V gate drive; at 3.3 V, R_DS(on) rises to ~12 mΩ per datasheet Table 4.

What is the safe operating area (SOA) limitation at DC operation?

At DC, the SOA is limited by R_DS(on) and thermal resistance. At T_C = 25 °C, maximum DC current is 65 A (50 W total dissipation); at T_C = 100 °C, it drops to 46 A. Pulse operation extends current to 260 A (limited by bondwire integrity), as shown in Figure 2.

Is the STD65N3LLH5 RoHS-compliant and halogen-free?

Yes - it is offered in ECOPACK®2-compliant DPAK packaging, meeting RoHS Directive 2011/65/EU and halogen-free requirements per IEC 61249-2-21. The "L" in the part number denotes lead-free and halogen-free construction, confirmed in ST's official packaging documentation.

STD65N3LLH5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ V

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 65A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.9mOhm @ 32.5A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8 nC @ 4.5 V

Vgs (Max):: ±22V

Input Capacitance (Ciss) (Max) @ Vds:: 1290 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 50W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD65N3LLH5 FAQ

1.How can I place an order for STD65N3LLH5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD65N3LLH5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD65N3LLH5 reliable?

The price and inventory of STD65N3LLH5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD65N3LLH5 is usually 5 days.

3.What payment methods are accepted for STD65N3LLH5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD65N3LLH5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD65N3LLH5?

STD65N3LLH5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD65N3LLH5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD65N3LLH5?

For technical support, including STD65N3LLH5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD65N3LLH5 requirements.

6.How does Aetrix verify that STD65N3LLH5 is sourced from the original manufacturer or authorized distributors?

All STD65N3LLH5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD65N3LLH5 meets industry standards.

7.What is the process for return or replacement of STD65N3LLH5?

All STD65N3LLH5 units undergo pre-shipment inspection (PSI). If there is an issue with STD65N3LLH5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD65N3LLH5 part is unused and in its original packaging.

Return procedure for STD65N3LLH5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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