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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD65N55LF3

Name: STD65N55LF3
Brand: STMicroelectronics
SKU: STD65N55LF3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD65N55LF3

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD65N55LF3.pdf

Description:: MOSFET N-CH 55V 80A DPAK

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Product details

Overview

STD65N55LF3 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET built with STripFET™ III technology, designed for high-current switching in automotive and industrial power stages. It delivers 55 V V_DS, 7.0 mΩ R_DS(on) at V_GS = 10 V and 32 A, 80 A continuous drain current at T_C = 25 °C, and 110 W total power dissipation in DPAK package - enabling efficient 12 V/24 V battery-fed motor control and DC-DC converter primary-side switching.

For engineers reviewing the STD65N55LF3 datasheet, STD65N55LF3 pinout, STD65N55LF3 application, or STD65N55LF3 equivalent, key selection criteria include its low gate charge (20 nC), 100% avalanche-tested ruggedness, thermal resistance junction-to-case of 1.36 °C/W, and validated performance under pulsed diode recovery (trr = 40–60 ns) and high dv/dt (11 V/ns).

Technical Context

This MOSFET employs STripFET™ III planar process to minimize both R_DS(on) and Q_g, achieving a figure-of-merit (R_DS(on) × Q_g) of ~140 mΩ·nC. Its gate threshold voltage (1–2.5 V) supports direct drive from 3.3 V and 5 V logic, while the integrated body diode exhibits fast reverse recovery (Q_rr = 60 nC, I_RRM = 3 A) under hard-switching conditions.

The device operates across –55 to +175 °C junction temperature range and is rated for unclamped inductive switching with EAS = 300 mJ at T_j = 25 °C. Safe operating area (SOA) is defined up to 10 ms pulse width at T_C = 25 °C, supporting robust overcurrent handling in automotive load-dump and motor stall scenarios.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage compatible with 42 V automotive systems and 36 V industrial rails.
R_DS(on) max	8.5 mΩ @ V_GS = 10 V, I_D = 32 A - Enables <1 W conduction loss at 40 A, reducing heatsink requirements.
I_D cont	80 A @ T_C = 25 °C - Supports high peak-load switching in starter solenoids and BLDC inverter half-bridges.
Q_g	20 nC @ V_DD = 27.5 V, I_D = 65 A - Low gate drive energy reduces controller IC loading and switching losses.
EAS	300 mJ - Avalanche-rated for reliable operation during inductive turn-off transients without external snubbers.
trr	40–60 ns @ I_SD = 65 A, di/dt = 100 A/µs - Minimizes commutation loss and EMI in synchronous rectification and H-bridge freewheeling.
R_thj-case	1.36 °C/W - Allows direct mounting to PCB copper pour or small heatsink for thermally constrained layouts.

Pinout & Package

Package: DPAK (TO-252), surface-mount, single-drain tab configuration with exposed drain pad for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects to ground or low-side switch node; carries full load current.
Pin 2 (Gate)	Control input (G)	High-impedance MOSFET gate; requires <20 nC charge for full enhancement; sensitive to ESD.
Pin 3 (Drain)	Power output (D)	Exposed metal tab - electrically and thermally connected to drain; must be soldered to large copper area.

Key Features

Feature	Design Value
STripFET™ III process	Reduces R_DS(on) × Q_g product by >30% vs. prior-generation DPAK MOSFETs, improving efficiency in 100–500 kHz SMPS.
100% avalanche tested	Guarantees single-pulse ruggedness to 300 mJ, eliminating need for external clamping in automotive load-switch designs.
Low V_GS(th)	1–2.5 V threshold enables direct interface with microcontroller GPIOs and low-voltage gate drivers without level-shifting.
Fast body diode	trr = 40–60 ns and Q_rr = 60 nC support synchronous rectifier replacement in buck converters and motor phase-leg freewheeling.
ECOPACK® compliant	Halogen-free, RoHS-compliant DPAK package meets automotive environmental standards (e.g., ELV, REACH).

Applications

Automotive Body Control Module (BCM)

Industrial DC Motor Driver

Use Scenario: High-side switching of 12 V lighting loads (headlamps, fog lamps) with PWM dimming and short-circuit protection.

IC Role / Device Role: Main power switch in protected load driver stage, replacing electromechanical relays.

Use Value: Eliminates relay bounce and contact wear; 80 A rating handles inrush currents up to 320 A (IDM), and avalanche rating absorbs inductive kickback from lamp filaments.

Use Scenario: Half-bridge leg in 24 V brushed DC motor controller for warehouse automation conveyors.

IC Role / Device Role: Low-side switching element with fast freewheeling via integrated body diode.

Use Value: 7.0 mΩ R_DS(on) limits conduction loss to <1.8 W at 60 A, while 40–60 ns trr minimizes shoot-through risk and improves PWM efficiency above 20 kHz.

48 V Mild Hybrid Starter-Generator

Server PSU OR-ing FET

Use Scenario: Crank assist and regenerative braking switching in 48 V P0 architecture, requiring bidirectional current handling and high reliability.

IC Role / Device Role: Synchronous rectifier and power switch in bidirectional DC-DC converter primary side.

Use Value: 55 V V_DS accommodates 48 V nominal + 10% tolerance + transient spikes; 175 °C max T_j ensures operation under under-hood thermal stress.

Use Scenario: Hot-swap and redundancy management in 12 V intermediate bus of multi-rail server power supplies.

IC Role / Device Role: OR-ing FET controlling power path between redundant PSUs and load.

Use Value: Low R_DS(on) (7.0 mΩ) reduces voltage drop to <0.5 V at 70 A, minimizing power loss and thermal rise; DPAK footprint simplifies layout in space-constrained backplanes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFZ44NPBF	R_DS(on) = 28 mΩ @ 10 V, Q_g = 67 nC, V_DS = 55 V, TO-220 package	Higher conduction and switching loss; through-hole mounting only; no avalanche rating specified	Select when cost sensitivity outweighs efficiency and ruggedness; not recommended for automotive or high-reliability industrial use.
STP65N55F3	Same die, TO-220 package; identical R_DS(on), Q_g, and EAS; higher R_thj-case (1.7 °C/W)	Requires larger heatsink; unsuitable for ultra-thin PCBs or dense power modules	Choose for prototyping or legacy through-hole designs where DPAK reflow is unavailable; same electrical behavior otherwise.

Compared with IRFZ44NPBF and STP65N55F3, STD65N55LF3 offers superior power density and thermal performance in surface-mount form, with verified avalanche capability critical for automotive transients - making it the preferred choice for production-grade 12–48 V switching where board space, efficiency, and field reliability are prioritized.

Availability

STD65N55LF3 is available at Aetrix Electronics and suitable for automotive body electronics, industrial motor drives, and 48 V mild hybrid power conversion requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for STD65N55LF3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs, discrete devices, and MEMS sensors for automotive, industrial, and consumer markets.

STD65N55LF3 belongs to ST's STripFET™ III Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in automotive power distribution and industrial motor control - emphasizing low R_DS(on), fast switching, and ruggedness under real-world fault conditions.

FAQ

What is the maximum safe operating temperature for STD65N55LF3?

The absolute maximum junction temperature (T_j) is 175 °C, and the storage temperature range is –55 to +175 °C. For continuous operation, derating begins at T_C = 25 °C using the 0.73 W/°C factor; at T_C = 100 °C, the maximum continuous drain current drops to 56 A per Table 2.

Does STD65N55LF3 require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to control dV/dt and prevent oscillation. For typical 10 V gate drive and 65 A switching, a 4.7 Ω resistor is used in ST's reference test circuit (Figure 15); values between 2.2 Ω and 10 Ω balance switching speed against EMI and gate driver stress.

Can STD65N55LF3 be used in synchronous rectification applications?

Yes - its fast body diode (trr = 40–60 ns, Q_rr = 60 nC) and low R_DS(on) make it suitable for low-voltage synchronous rectification in buck converters and LLC secondaries, provided gate timing avoids shoot-through and V_GS remains ≥ 5 V during conduction.

Is STD65N55LF3 qualified for automotive applications per AEC-Q101?

No - although widely used in automotive body electronics and referenced in ST application notes for BCM and lighting, STD65N55LF3 is not officially AEC-Q101 qualified. For AEC-Q101-compliant alternatives, consider ST's AUIRF3004 or STL65N55F3 series.

STD65N55LF3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ III

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 8.5mOhm @ 32A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD65N55LF3 FAQ

1.How can I place an order for STD65N55LF3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD65N55LF3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD65N55LF3 reliable?

The price and inventory of STD65N55LF3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD65N55LF3 is usually 5 days.

3.What payment methods are accepted for STD65N55LF3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD65N55LF3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD65N55LF3?

STD65N55LF3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD65N55LF3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD65N55LF3?

For technical support, including STD65N55LF3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD65N55LF3 requirements.

6.How does Aetrix verify that STD65N55LF3 is sourced from the original manufacturer or authorized distributors?

All STD65N55LF3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD65N55LF3 meets industry standards.

7.What is the process for return or replacement of STD65N55LF3?

All STD65N55LF3 units undergo pre-shipment inspection (PSI). If there is an issue with STD65N55LF3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD65N55LF3 part is unused and in its original packaging.

Return procedure for STD65N55LF3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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