STMicroelectronics STD6N60M2

Overview

STD6N60M2 from STMicroelectronics is an N-channel 600 V, 1.06 Ω typ. (1.2 Ω max.), 4.5 A MDmesh™ M2 Power MOSFET in DPAK (TO-252) package, optimized for high-efficiency flyback and PFC converters operating at 65–135 kHz, with 8.2 nC total gate charge and 14 pF output capacitance.

For engineers reviewing the STD6N60M2 datasheet, STD6N60M2 pinout, STD6N60M2 application, or STD6N60M2 equivalent, key selection criteria include avalanche ruggedness (86 mJ EAS), dv/dt immunity (50 V/ns), Zener-protected gate, and low Coss profile for reduced switching loss in hard-switched SMPS topologies.

Technical Context

This device employs ST's MDmesh M2 strip layout and enhanced vertical structure to achieve low RDS(on) while maintaining high voltage blocking and fast switching. Its 1.06 Ω typical on-resistance at VGS = 10 V and ID = 2.25 A enables efficient conduction in medium-power AC-DC adapters and industrial power supplies.

The MOSFET features a fully characterized body diode with 274 ns reverse recovery time (TJ = 25 °C) and 1.47 µC Qrr, supporting quasi-resonant and transition-mode operation. Its 15 V/ns diode recovery dv/dt rating ensures robustness during inductive turn-off transients.

Key Specifications

Pinout & Package

DPAK (TO-252) package: surface-mount, single-ended heatsink interface via exposed drain tab; thermally optimized for FR-4 PCBs with 2-oz copper (RthJA = 50 °C/W).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 600 V Power MOSFET applications.

Compared with STP6N60M2 and FDPF5N60NZ, STD6N60M2 delivers superior surface-mount thermal management (RthJA = 50 °C/W on standard PCB), integrated gate protection, and lower Coss-making it optimal for compact, high-reliability AC-DC converters where board space and transient immunity are critical.

Availability

STD6N60M2 is available at Aetrix Electronics and suitable for AC-DC adapters, industrial SMPS, and LED driver modules requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STD6N60M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STD6N60M2 belongs to the MDmesh M2 Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in offline SMPS, PFC stages, and resonant converters up to 150 kHz.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STD6N60M2 supports 2.9 A continuous drain current at TC = 100 °C, as specified in Table 1 of DS9735 Rev 4. This derating reflects thermal limits of the DPAK package and must be applied in thermal design calculations for sustained operation above 75 °C ambient.

Does STD6N60M2 include internal gate protection?

Yes-STD6N60M2 integrates a Zener diode between gate and source, clamping gate-source voltage to ±25 V. This eliminates the need for external gate protection components in most standard SMPS layouts, as confirmed in the "Features" section and absolute maximum ratings table.

Can STD6N60M2 replace STB6N60M2 in existing designs?

STD6N60M2 and STB6N60M2 share identical electrical specifications and marking (6N60M2), differing only in package: DPAK vs. D²PAK. Pin-to-pin compatibility exists, but thermal performance differs-RthJC is 2.08 °C/W for D²PAK versus ~3.5 °C/W for DPAK-requiring PCB thermal validation.

What is the typical reverse recovery charge (Qrr) of the body diode?

The body diode exhibits 1.47 µC Qrr at TJ = 25 °C and 1.96 µC at TJ = 150 °C, measured under ISD = 4.5 A, di/dt = 100 A/µs, and VDD = 60 V. These values are critical for estimating commutation loss in quasi-resonant topologies and are explicitly listed in Table 7.