STMicroelectronics STD6N62K3

Overview

STD6N62K3 from STMicroelectronics is an N-channel 620 V, 1.2 Ω (max), 5.5 A MDmesh K3 Power MOSFET in DPAK (TO-252) package, optimized for high-voltage switching in SMPS, PFC, and industrial inverters. It delivers 90 W total power dissipation, 140 mJ single-pulse avalanche energy, and 12 V/ns dv/dt capability.

For engineers reviewing the STD6N62K3 datasheet, STD6N62K3 pinout, STD6N62K3 application, or STD6N62K3 equivalent, key selection criteria include its 620 V V_DS, low 0.95 Ω typical R_DS(on), Zener-protected gate, and enhanced diode reverse recovery (290 ns trr at 25 °C).

Technical Context

This MDmesh K3 device uses a vertically optimized structure to reduce R_DS(on) while maintaining high breakdown voltage. Its dynamic performance is defined by 875 pF C_iss, 100 pF C_oss, and 17 pF Crss at V_DS = 50 V - enabling fast switching with low gate charge (34 nC total, 22 nC Q_gd).

The integrated source-drain diode features 1.5 V forward voltage at 5.5 A and exhibits improved recovery behavior: 1.9 µC Q_rr and 290 ns t_rr under standard inductive test conditions (di/dt = 100 A/µs, V_DD = 60 V), critical for reducing switching losses in hard-switched topologies.

Key Specifications

Pinout & Package

DPAK (TO-252) package with exposed drain tab for thermal and electrical connection; thermally efficient for surface-mount PCB layouts requiring moderate power handling.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP6N62K3 and FDPF6N62, STD6N62K3 offers superior thermal performance in SMT designs, guaranteed avalanche ruggedness, and built-in gate protection-making it optimal for compact, high-reliability industrial and renewable energy converters.

Availability

STD6N62K3 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, solar microinverters, and EV onboard chargers requiring stable component supply and long-term lifecycle support.

Supply support for STD6N62K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, MEMS, and microcontrollers for industrial, automotive, and consumer markets.

The MDmesh K3 product line targets high-efficiency, high-voltage power conversion systems-specifically engineered to replace older planar MOSFETs with lower R_DS(on), faster switching, and enhanced ruggedness in SMPS and PFC stages.

FAQ

What is the maximum gate-source voltage rating for STD6N62K3?

The absolute maximum V_GS is ±30 V, with integrated Zener protection limiting gate-to-source voltage to this range. This eliminates the need for external gate clamping components in most designs, though layout-induced ringing above 25 V should still be minimized via proper gate resistor selection and routing.

Can STD6N62K3 be used in synchronous rectification applications?

No - STD6N62K3 is an N-channel high-side switch intended for primary-side switching, not synchronous rectification. Its body diode is optimized for freewheeling, not bidirectional conduction, and lacks the low V_SD and fast t_rr required for secondary-side SR control. Use dedicated SR controllers with logic-level MOSFETs instead.

What is the thermal resistance from junction to case (R_thJC) for STD6N62K3?

R_thJC is 1.39 °C/W, measured from junction to the exposed drain tab. This value assumes direct thermal contact between the DPAK tab and a sufficiently sized copper pour on the PCB. Effective heatsinking requires ≥1 inch² of 2 oz Cu for rated 90 W dissipation at T_C = 25 °C.

Does STD6N62K3 have lead-free and RoHS-compliant packaging?

Yes - STD6N62K3 is supplied in ECOPACK®-compliant DPAK (TO-252) packaging, meeting RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. The device is halogen-free and qualifies for lead-free soldering processes up to 260 °C peak temperature per JEDEC J-STD-020.