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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD6N65M2

Name: STD6N65M2
Brand: STMicroelectronics
SKU: STD6N65M2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD6N65M2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD6N65M2.pdf

Description:: MOSFET N-CH 650V 4A DPAK

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Product details

Overview

STD6N65M2 from STMicroelectronics is an N-channel 650 V, 1.35 Ω (max), 4 A Power MOSFET in DPAK (TO-252) package, built on MDmesh™ M2 strip-layout technology for high-efficiency flyback and PFC converters. It delivers low gate charge (9.8 nC), optimized COSS (114 pF eq.), and 100% avalanche-tested ruggedness for reliable operation in industrial SMPS and AC-DC adapters.

For engineers reviewing the STD6N65M2 datasheet, STD6N65M2 pinout, STD6N65M2 application, or STD6N65M2 equivalent, key selection criteria include RDS(on) at 10 V drive, dv/dt ruggedness (50 V/ns), thermal resistance junction-to-PCB (50 °C/W), and Zener-protected gate integrity under transient stress.

Technical Context

This MOSFET employs ST's MDmesh™ M2 vertical superjunction architecture with refined trench geometry to simultaneously reduce RDS(on) and output capacitance. Its 1.2 Ω typical RDS(on) and 114 pF equivalent COSS enable high-frequency switching up to 100 kHz while maintaining low conduction and capacitive losses.

The device integrates a monolithic Zener diode between gate and source for ±25 V ESD protection and features 15 V/ns diode recovery dv/dt immunity and 50 V/ns MOSFET dv/dt ruggedness-critical for hard-switched topologies with fast voltage transients across the drain-source path.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Withstands full mains rectified voltage (e.g., 400 V DC bus + 60% margin) in offline converters without breakdown.
R_DS(on) max	1.35 Ω @ V_GS = 10 V, I_D = 2 A - Enables <1.5 W conduction loss at 4 A continuous drain current in thermally constrained DPAK layouts.
Q_g	9.8 nC - Reduces gate drive power and enables use of low-current drivers (e.g., 100 mA peak) in compact isolated gate circuits.
C_oss eq.	114 pF - Low stored energy (½·C·V²) minimizes turn-off loss and improves efficiency in high-V_DS switching transitions.
T_j max	150 °C - Supports operation in sealed enclosures or high-ambient environments (e.g., industrial power supplies at 70 °C ambient).
R_thj-pcb	50 °C/W - Achievable with standard 1-inch² FR-4 PCB copper area; defines thermal derating slope for sustained 4 A operation.
E_AS	100 mJ - Single-pulse avalanche energy rating ensures robustness against inductive switching faults without external snubbers.

Pinout & Package

STD6N65M2 uses the DPAK (TO-252) surface-mount package with exposed drain tab for thermal and electrical connection. The package measures 6.2 × 6.6 × 2.4 mm (L × W × H) and features gull-wing leads compatible with standard reflow profiles.

Pin/Terminal	Circuit Role	Design Meaning
D (Drain)	Main high-side power terminal	Connected to exposed metal tab; requires direct thermal pad connection to PCB copper for heat dissipation and low-inductance return path.
G (Gate)	Control input	High-impedance node requiring <10 nF gate capacitance buffering; sensitive to ringing-needs local RC snubber if driven >1 MHz.
S (Source)	Power reference and current return	Common reference for gate drive and current sensing; must be low-inductance path to minimize V_GS noise during switching transitions.

Key Features

Feature	Design Value
Extremely low gate charge	9.8 nC total charge enables <1 µs turn-on/off times with 100 Ω gate resistor, reducing switching loss in 65–100 kHz SMPS.
Optimized COSS profile	114 pF equivalent output capacitance yields 30% lower turn-off energy vs. legacy 650 V MOSFETs, improving light-load efficiency.
100% avalanche tested	Each unit validated for 0.5 A repetitive avalanche current and 100 mJ single-pulse energy-ensures field reliability in unclamped inductive loads.
Zener-protected gate	Integrated 25 V Zener clamps gate-source voltage during ESD events or gate driver faults, eliminating need for external TVS diodes.

Applications

Industrial AC-DC Adapters

Server PSU Primary Switches

Use Scenario: 100–240 VAC input, 300–400 VDC bus, 65–100 kHz flyback or LLC resonant converter.

IC Role / Device Role / Timing Role: Main high-voltage switch handling primary-side power transfer and zero-voltage switching (ZVS) transitions.

Use Value: 1.35 Ω RDS(on) and 114 pF COSS reduce combined conduction/switching loss by ~18% vs. comparable DPAK MOSFETs at 75 kHz, enabling 80 PLUS Titanium compliance.

Use Scenario: High-density 1U server PSUs with active clamp forward or asymmetric half-bridge topology.

IC Role / Device Role / Timing Role: Synchronous rectifier or primary-side switch operating with tight duty-cycle control and fast dv/dt edges.

Use Value: 50 V/ns MOSFET dv/dt ruggedness prevents spurious turn-on during high-slew-rate gate drive, eliminating false triggering in multi-phase interleaved designs.

LED Driver Power Stages

Industrial Motor Control Inverters

Use Scenario: Constant-current LED drivers with dimmable 300–450 VDC input and 100 kHz PWM modulation.

IC Role / Device Role / Timing Role: High-side buck or buck-boost switch regulating LED string current with precise pulse-width control.

Use Value: 1.6 V forward diode voltage (V_SD) and 260 ns reverse recovery time minimize body-diode conduction loss during dead-time, improving thermal margin at 4 A peak.

Use Scenario: 3-phase inverter stages in HVAC compressors or pump drives with 400 VAC input and 16 kHz PWM carrier.

IC Role / Device Role / Timing Role: Half-bridge low-side switch managing motor phase current commutation and regenerative braking energy.

Use Value: 100% avalanche-tested ruggedness allows safe operation during short-circuit events or motor stall conditions without external protection circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6N65M2	TO-220 package, R_thj-case = 1.5 °C/W (vs. 50 °C/W for STD6N65M2), same RDS(on) and Qg.	Requires heatsink; suited for higher-power (>100 W) open-frame designs where airflow is available.	Select when thermal budget permits discrete heatsinking and board space allows through-hole mounting.
FDPF5N65	650 V, 1.4 Ω, 4.5 A, 12.5 nC Qg, TO-220FP package; no integrated Zener protection.	Lacks gate Zener-requires external 18 V TVS; higher Qg increases gate drive loss at >80 kHz.	Choose only if cost sensitivity outweighs gate protection needs and switching frequency remains ≤65 kHz.

Compared with STP6N65M2 and FDPF5N65, STD6N65M2 offers superior PCB-level thermal management via its DPAK footprint and eliminates external gate protection components-reducing BOM count and layout complexity in space-constrained, fanless industrial power supplies.

Availability

STD6N65M2 is available at Aetrix Electronics and suitable for industrial AC-DC adapters, server power supplies, and LED driver power stages requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STD6N65M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STD6N65M2 belongs to ST's MDmesh™ M2 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switched-mode power supplies where low RDS(on), low Qg, and avalanche ruggedness are critical.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STD6N65M2 supports 2.5 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS10516 Rev 2. This derating reflects thermal limits of the DPAK package and must be verified using actual PCB copper area and ambient conditions-no internal current limiting is provided.

Does STD6N65M2 require external gate protection?

No. STD6N65M2 integrates a monolithic Zener diode between gate and source rated for ±25 V, providing inherent protection against ESD and gate overvoltage. External TVS diodes are unnecessary unless system-level transients exceed ±25 V or involve high-energy surges beyond IEC 61000-4-2 Level 4.

How does its COSS profile impact hard-switched PFC performance?

With 114 pF equivalent COSS, STD6N65M2 reduces turn-off energy (E_off ≈ ½·C_oss·V_DS²) by ~25% versus older 650 V MOSFETs at 400 V bus, directly lowering switching loss in continuous conduction mode (CCM) PFC stages and enabling >98% efficiency at full load.

Can it replace STD5N65M2 in existing designs?

Yes-STD6N65M2 is a direct upgrade: identical DPAK package, same pinout, improved RDS(on) (1.35 Ω vs. 1.6 Ω), lower Qg (9.8 nC vs. 11.5 nC), and enhanced dv/dt ruggedness (50 V/ns vs. 35 V/ns). No layout or drive circuit changes are required for drop-in replacement.

STD6N65M2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.35Ohm @ 2A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 9.8 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 226 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 60W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD6N65M2 FAQ

1.How can I place an order for STD6N65M2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD6N65M2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD6N65M2 reliable?

The price and inventory of STD6N65M2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD6N65M2 is usually 5 days.

3.What payment methods are accepted for STD6N65M2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD6N65M2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD6N65M2?

STD6N65M2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD6N65M2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD6N65M2?

For technical support, including STD6N65M2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD6N65M2 requirements.

6.How does Aetrix verify that STD6N65M2 is sourced from the original manufacturer or authorized distributors?

All STD6N65M2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD6N65M2 meets industry standards.

7.What is the process for return or replacement of STD6N65M2?

All STD6N65M2 units undergo pre-shipment inspection (PSI). If there is an issue with STD6N65M2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD6N65M2 part is unused and in its original packaging.

Return procedure for STD6N65M2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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