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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD6NF10T4

Name: STD6NF10T4
Brand: STMicroelectronics
SKU: STD6NF10T4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD6NF10T4

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD6NF10T4.pdf

Description:: MOSFET N-CH 100V 6A DPAK

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Product details

Overview

STD6NF10T4 from STMicroelectronics is an N-channel 100 V, 6 A, 0.22 Ω (typ) DPAK Power MOSFET featuring low gate charge (10 nC), exceptional dv/dt capability (40 V/ns), and 100% avalanche tested ruggedness. It serves as a primary high-frequency switching device in isolated DC-DC converters for telecom and server power supplies.

For engineers reviewing the STD6NF10T4 datasheet, STD6NF10T4 pinout, STD6NF10T4 application, or STD6NF10T4 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, total gate charge for ZVS/ZCS compatibility, avalanche energy rating (200 mJ), thermal resistance (5 °C/W junction-to-case), and DPAK package suitability for surface-mount thermal management.

Technical Context

This STripFET™ II MOSFET uses a planar trench-gate process optimized to minimize input capacitance (C_iss = 280 pF) and gate charge (Q_g = 10 nC), enabling efficient operation above 300 kHz in hard-switched topologies. Its low Q_gd/Q_g ratio (4/10 = 0.4) supports robust Miller immunity during fast turn-off.

The device integrates a fast-recovery body diode (t_rr = 70 ns, Q_rr = 175 nC) with low forward voltage (V_SD = 1.3 V at 6 A), making it suitable for synchronous rectification and freewheeling roles where reverse recovery losses must be minimized.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Withstands full bus voltage in 48 V telecom systems with margin for transient spikes.
R_DS(on) max	0.25 Ω @ V_GS = 10 V - Limits conduction loss to ≤900 mW at 6 A continuous drain current.
Q_g	10 nC - Enables low-power gate driving with standard 1 A peak drivers at >500 kHz switching.
E_AS	200 mJ - Supports unclamped inductive switching in flyback or active clamp circuits without failure.
dv/dt	40 V/ns - Resists false turn-on during high-slew-rate switching transitions in half-bridge configurations.
R_thj-case	5 °C/W - Allows 30 W dissipation with ≤150 °C junction rise over 25 °C case temperature using standard DPAK heatsinking.
I_D (T_C = 100 °C)	4 A - Defines usable current derating for sustained operation in enclosed industrial power modules.

Pinout & Package

STD6NF10T4 is housed in a DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection. The package complies with ECOPACK® environmental standards and JEDEC JESD97 marking requirements.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives 10 V logic-level gate drive; low input capacitance (280 pF) reduces driver loading.
2 (Drain)	High-side power output	Connected to PCB copper pour for heat sinking; electrically tied to exposed backside metal pad.
3 (Source)	Reference node / return path	Serves as local ground reference for gate driver; carries full load current and body diode conduction.

Key Features

Feature	Design Value
STripFET™ II process	Reduces gate charge by 35% vs. conventional planar MOSFETs, enabling higher frequency operation without efficiency penalty.
100% avalanche rated	Guarantees single-pulse ruggedness up to 200 mJ, eliminating need for external snubbers in inductive switch applications.
Low C_oss (45 pF)	Minimizes turn-off energy loss and improves light-load efficiency in resonant LLC converters.
Fast body diode (t_rr = 70 ns)	Reduces reverse recovery losses in synchronous buck or half-bridge freewheeling paths.
ECOPACK® lead-free	Meets RoHS and JEDEC JESD97 compliance with marked second-level interconnect category on package.

Applications

Telecom DC-DC Converters

Server VRMs

Use Scenario: Primary-side switch in 48 V input, 12 V output isolated forward converter operating at 350 kHz.

IC Role / Device Role / Timing Role: High-side power switch controlling transformer primary current; requires low Q_g and high dv/dt immunity.

Use Value: 10 nC gate charge enables use of low-cost 1 A gate drivers while maintaining <1% switching loss at rated load.

Use Scenario: High-side FET in multiphase buck converter supplying CPU core voltage (0.8–1.2 V) from 12 V rail.

IC Role / Device Role / Timing Role: Synchronous rectifier with integrated body diode; operates in continuous conduction mode with 500 ns dead-time.

Use Value: 70 ns reverse recovery time and 1.3 V forward drop reduce body diode conduction loss by 32% vs. standard MOSFETs.

Industrial SMPS

LED Driver Power Stages

Use Scenario: Main switch in 24 V input, 350 V output boost PFC stage for factory automation controllers.

IC Role / Device Role / Timing Role: Critical conduction mode (CRM) switch handling 6 A peak current with 100 V blocking requirement.

Use Value: 100 V V_DSS and 200 mJ E_AS ensure reliable operation under line surges and inductive kickback.

Use Scenario: Low-side switch in constant-current LED driver for street lighting (36 V, 1.5 A output).

IC Role / Device Role / Timing Role: PWM-controlled current sink; requires low R_DS(on) and stable threshold across temperature.

Use Value: 0.22 Ω R_DS(on) limits I²R loss to 495 mW at 1.5 A, enabling compact thermally constrained PCB layout.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF640NPbF	R_DS(on) = 0.18 Ω but Q_g = 67 nC; no avalanche rating specified.	Higher gate drive power required; unsuitable for unclamped inductive loads.	Select only when gate drive capability exceeds 2 A peak and avalanche stress is absent.
STP6NK10Z	Same V_DSS and R_DS(on), but Zener-protected gate (±20 V); Q_g = 12 nC.	Enhanced ESD robustness; slightly higher switching loss due to +20% Q_g.	Prefer for high-noise industrial environments where gate oxide protection is critical.

Compared with IRF640NPbF and STP6NK10Z, STD6NF10T4 offers the best balance of low gate charge, guaranteed avalanche ruggedness, and DPAK thermal performance-making it optimal for high-frequency, reliability-critical telecom and server power stages.

Availability

STD6NF10T4 is available at Aetrix Electronics and suitable for telecom DC-DC converters, server VRMs, and industrial SMPS requiring stable component supply and long-term manufacturing continuity.

Supply support for STD6NF10T4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, delivering silicon solutions for automotive, industrial, and power management applications since 1987.

STD6NF10T4 belongs to ST's STripFET™ II Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switching in isolated and non-isolated DC-DC conversion systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STD6NF10T4 supports 4 A continuous drain current when the case temperature is maintained at 100 °C, as defined in Table 2 of the datasheet. This derating reflects thermal limitations of the DPAK package and ensures safe operation within its 150 °C maximum junction temperature specification.

Does STD6NF10T4 have a built-in gate protection diode?

No, STD6NF10T4 does not integrate a gate protection Zener diode. Its absolute maximum gate-source voltage is ±20 V, and external gate clamping (e.g., 15 V Zener) is recommended in noisy environments or when driving with high-impedance sources to prevent oxide damage.

Can STD6NF10T4 replace STU6NF10 in the same PCB footprint?

Yes-STD6NF10T4 (DPAK/TO-252) and STU6NF10 (IPAK/TO-251) share identical pinout (G-D-S) and electrical specifications, but their mechanical footprints differ. DPAK has wider lead spacing and larger body; direct replacement requires PCB land pattern revision to match TO-252 dimensions.

What is the typical reverse recovery charge (Q_rr) of the body diode?

The body diode of STD6NF10T4 exhibits a typical reverse recovery charge of 175 nC under conditions of ISD = 6 A, di/dt = 100 A/µs, VDD = 10 V, and Tj = 150 °C. This value is measured per Figure 15 test circuit and directly impacts freewheeling loss in synchronous rectifier applications.

STD6NF10T4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 250mOhm @ 3A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 280 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 30W (Tc)

Operating Temperature:: -65°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD6NF10T4 FAQ

1.How can I place an order for STD6NF10T4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD6NF10T4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD6NF10T4 reliable?

The price and inventory of STD6NF10T4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD6NF10T4 is usually 5 days.

3.What payment methods are accepted for STD6NF10T4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD6NF10T4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD6NF10T4?

STD6NF10T4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD6NF10T4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD6NF10T4?

For technical support, including STD6NF10T4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD6NF10T4 requirements.

6.How does Aetrix verify that STD6NF10T4 is sourced from the original manufacturer or authorized distributors?

All STD6NF10T4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD6NF10T4 meets industry standards.

7.What is the process for return or replacement of STD6NF10T4?

All STD6NF10T4 units undergo pre-shipment inspection (PSI). If there is an issue with STD6NF10T4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD6NF10T4 part is unused and in its original packaging.

Return procedure for STD6NF10T4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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