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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD6NM60N-1

Name: STD6NM60N-1
Brand: STMicroelectronics
SKU: STD6NM60N-1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD6NM60N-1

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: STD6NM60N-1.pdf

Description:: MOSFET N-CH 600V 4.6A IPAK

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Product details

Overview

STD6NM60N-1 from STMicroelectronics is an N-channel 600 V, 0.85 Ω (typ), 4.6 A MDmesh™ II Power MOSFET in IPAK (TO-251) package, designed for high-efficiency switching converters in offline SMPS, PFC stages, and auxiliary power supplies. It features 100% avalanche tested ruggedness, low gate charge (13 nC), and low input capacitance (420 pF).

For engineers reviewing the STD6NM60N-1 datasheet, STD6NM60N-1 pinout, STD6NM60N-1 application, or STD6NM60N-1 equivalent, key selection criteria include R_DS(on) at 10 V, unclamped inductive switching capability, thermal resistance (R_thj-case = 5 °C/W), and IPAK package suitability for medium-power board-level thermal management.

Technical Context

This device implements ST's second-generation MDmesh™ vertical structure combined with strip layout to minimize conduction and switching losses simultaneously. Its 600 V V_DSS, 0.85 Ω R_DS(on) (V_GS = 10 V, I_D = 2.3 A), and 13 nC total gate charge enable high-frequency operation in flyback and LLC resonant converters.

The IPAK package provides a thermally optimized leaded alternative to DPAK/TO-220FP, with R_thj-case = 5 °C/W and 2.9 A continuous drain current at T_C = 100 °C. Its source-drain diode exhibits 1.3 V forward voltage at 4.6 A and 300 ns reverse recovery time under standard test conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Withstands full mains rectified voltage in universal-input offline converters without derating.
R_DS(on) max	0.92 Ω @ V_GS = 10 V, I_D = 2.3 A - Ensures <1.5 W conduction loss at 4.6 A in continuous mode.
Q_g	13 nC - Enables efficient gate drive with low-power controllers and reduces switching loss at ≥100 kHz.
C_iss	420 pF @ V_DS = 50 V - Low input capacitance minimizes Miller effect and improves EMI behavior in hard-switched topologies.
R_thj-case	5 °C/W - Supports 4.6 A continuous operation with modest heatsinking in IPAK footprint.
E_AS	65 mJ - Confirmed single-pulse avalanche energy allows robust operation during transient overloads without snubbers.

Pinout & Package

STD6NM60N-1 is housed in IPAK (TO-251) package: three-lead, surface-mount compatible with through-hole reflow or wave soldering; drain-connected tab enables direct thermal coupling to PCB copper pour or heatsink.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	High-impedance control terminal; requires ≤10 V drive for full enhancement; gate input resistance = 6 Ω.
2 (D)	Drain	Main high-voltage power terminal; internally connected to exposed metal tab for thermal and electrical conduction.
3 (S)	Source	Power return path and reference for gate drive; forms common node with internal body diode cathode.

Key Features

Feature	Design Value
MDmesh™ II technology	Combines low R_DS(on) and low Q_g via optimized vertical superjunction structure-enables >94% efficiency in 65–100 kHz flyback designs.
100% avalanche rated	Guaranteed single-pulse E_AS = 65 mJ at T_j = 25 °C-eliminates need for external clamping in cost-sensitive AC-DC adapters.
Low gate input resistance	6 Ω-reduces gate oscillation risk and simplifies RC damping network design in high-dv/dt environments.
ECOPACK® compliant	Meets RoHS and halogen-free requirements-supports industrial and consumer product compliance without process change.

Applications

AC-DC Adapter Primary Switch

Industrial PFC Boost Stage

Use Scenario: 36 W universal-input (90–264 VAC) adapter operating in discontinuous conduction mode (DCM) at 65 kHz.

IC Role / Device Role / Timing Role: Main power switch controlling energy transfer from primary winding to secondary; driven by PWM controller with 10 V gate drive.

Use Value: 0.85 Ω R_DS(on) limits conduction loss to <0.9 W at peak 4.6 A, while 13 nC Q_g keeps gate drive loss below 15 mW at 65 kHz.

Use Scenario: 300 W active boost PFC stage in programmable logic controller (PLC) power supply.

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost converter; synchronized to line frequency zero-crossing.

Use Value: 600 V rating accommodates 400 V DC bus with margin; 5 °C/W R_thj-case enables stable operation at 70 °C ambient with 2 oz copper thermal pad.

LED Driver Flyback Switch

Server Auxiliary Power Supply

Use Scenario: 25 W constant-current LED driver for street lighting, operating in quasi-resonant (QR) mode.

IC Role / Device Role / Timing Role: Primary-side switching element turned on at valley point to minimize turn-on loss; handles 400 V reflected output voltage.

Use Value: 40 V/ns dv/dt capability ensures reliable operation during QR transitions; 300 ns trr supports clean diode commutation without voltage spikes.

Use Scenario: +12 V standby rail in 1U server PSU, powered from main bulk capacitor via isolated flyback.

IC Role / Device Role / Timing Role: Primary-side switch in low-duty-cycle, high-reliability auxiliary converter; operates continuously during system sleep states.

Use Value: 100% avalanche testing guarantees survival during brown-out events and cold-start surges without failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NM60N	Same die, TO-220 package; R_thj-case = 2.78 °C/W; higher continuous current (4.6 A at T_C = 25 °C).	Better suited for forced-air-cooled industrial SMPS where mechanical mounting and heatsink interface dominate.	Select when thermal performance outweighs board space constraints and through-hole assembly is acceptable.
FDPF18N50FT	500 V rating, 0.32 Ω R_DS(on), 18 A ID; different superjunction generation; no guaranteed avalanche rating.	Targeted at lower-input-voltage (<277 VAC) systems where higher current and lower R_DS(on) reduce conduction loss.	Choose only if input voltage never exceeds 400 V DC and avalanche robustness is not required for system reliability.

Compared with STP6NM60N, STD6NM60N-1 trades thermal performance for compact IPAK footprint and surface-mount compatibility; versus FDPF18N50FT, it offers superior voltage margin and proven avalanche ruggedness at the cost of higher R_DS(on) and lower current rating.

Availability

STD6NM60N-1 is available at Aetrix Electronics and suitable for AC-DC adapters, industrial PFC modules, LED drivers, and server auxiliary power supplies requiring stable component supply and long-term manufacturability.

Supply support for STD6NM60N-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, delivering intelligent power, microcontrollers, sensors, and analog solutions across automotive, industrial, and consumer markets.

This device belongs to ST's MDmesh™ II high-voltage MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in cost-sensitive and thermally constrained applications.

FAQ

What is the maximum continuous drain current for STD6NM60N-1 at 100 °C case temperature?

The maximum continuous drain current is 2.9 A at T_C = 100 °C, as specified in Table 2 of the datasheet. This value is limited by junction temperature (T_j ≤ 150 °C) and package thermal resistance (R_thj-case = 5 °C/W). Derating curves in Figure 6 confirm this linear reduction from 4.6 A at 25 °C.

Does STD6NM60N-1 have an integrated body diode, and what are its key parameters?

Yes, it includes a monolithic source-drain body diode rated for 4.6 A continuous and 18.4 A pulsed current. Key parameters include 1.3 V forward voltage at 4.6 A and 300 ns reverse recovery time (T_j = 25 °C) with 2 µC reverse recovery charge, per Table 8 and Figure 20.

Can STD6NM60N-1 be used in zero-voltage switching (ZVS) topologies?

Yes-its low C_oss (30 pF) and C_rss (4 pF), combined with 420 pF C_iss, support ZVS operation in LLC resonant converters up to 300 kHz. The 40 V/ns dv/dt rating (Table 5) and 65 mJ E_AS ensure robustness during resonant transitions and fault conditions.

Is STD6NM60N-1 pin-compatible with other devices in the STx6NM60N family?

No-while electrically similar, STD6NM60N-1 uses IPAK (TO-251) with G-D-S pinout (1-2-3), whereas STD6NM60N (DPAK) and STP6NM60N (TO-220) share identical pin numbering but differ in mechanical footprint and thermal characteristics. Layout redesign is required for substitution.

STD6NM60N-1 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 4.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 920mOhm @ 2.3A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 420 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 45W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-251 (IPAK)

STD6NM60N-1 FAQ

1.How can I place an order for STD6NM60N-1 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD6NM60N-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD6NM60N-1 reliable?

The price and inventory of STD6NM60N-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD6NM60N-1 is usually 5 days.

3.What payment methods are accepted for STD6NM60N-1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD6NM60N-1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD6NM60N-1?

STD6NM60N-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD6NM60N-1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD6NM60N-1?

For technical support, including STD6NM60N-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD6NM60N-1 requirements.

6.How does Aetrix verify that STD6NM60N-1 is sourced from the original manufacturer or authorized distributors?

All STD6NM60N-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD6NM60N-1 meets industry standards.

7.What is the process for return or replacement of STD6NM60N-1?

All STD6NM60N-1 units undergo pre-shipment inspection (PSI). If there is an issue with STD6NM60N-1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD6NM60N-1 part is unused and in its original packaging.

Return procedure for STD6NM60N-1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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