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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD70N02L

Name: STD70N02L
Brand: STMicroelectronics
SKU: STD70N02L
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD70N02L

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD70N02L.pdf

Description:: MOSFET N-CH 25V 60A DPAK

Quantity:: RFQ Add To RFQ list

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Inventory:8,172

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Product details

Overview

STD70N02L from STMicroelectronics is an N-channel 25V, 60A, 6.8mΩ logic-level Power MOSFET in DPAK package, utilizing STripFET™ III technology for ultra-low R_DS(on) × Q_g. It serves as a high-efficiency low-side switch in synchronous buck converters, delivering <0.008Ω on-resistance at V_GS = 10V and 30A, 1.8V gate threshold, and 24nC total gate charge - enabling high-frequency switching with minimized conduction and switching losses in DC-DC power stages.

For engineers reviewing the STD70N02L datasheet, STD70N02L pinout, STD70N02L application, or STD70N02L equivalent, key selection criteria include verified R_DS(on) at 5V/10V drive, avalanche energy rating (280mJ), thermal resistance (2.5°C/W junction-to-case), safe operating area under inductive loads, and compatibility with standard DPAK PCB footprints and reflow profiles.

Technical Context

This MOSFET employs ST's STripFET™ III trench-gate process to achieve industry-leading R_DS(on) × Q_g product - critical for minimizing combined conduction and gate-drive losses in high-current, high-frequency switching. Its logic-level gate (V_GS(th) = 1.0–1.8V) ensures full enhancement with 3.3V or 5V controllers without level-shifting.

The device is optimized for low-side operation in synchronous buck topologies: low C_oss (400pF) and Q_rr (36nC) reduce turn-on loss in the high-side FET, while its robust 240A pulsed drain current and 280mJ single-pulse avalanche energy support reliable operation under transient overloads and unclamped inductive switching.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	25V - Maximum blocking voltage compatible with 24V input rails and 30V absolute max spike tolerance
R_DS(on) @ V_GS=10V	0.0068Ω - Enables ≤0.6W conduction loss at 30A continuous, critical for thermally constrained DC-DC designs
I_D (T_C=25°C)	60A - Sustains high output current in compact power stages when mounted on adequate copper area
Q_g	24nC - Low gate charge allows fast switching with modest gate drivers (e.g., 1A peak), reducing transition losses
R_thj-case	2.5°C/W - Junction-to-case thermal resistance enables 60W dissipation with ≤15°C rise above heatsink temperature
E_AS	280mJ - Single-pulse avalanche capability supports robustness against inductive kickback in non-clamped circuits
V_GS(th)	1.0–1.8V - Logic-level threshold ensures full turn-on with 3.3V microcontroller GPIO or PWM controller outputs

Pinout & Package

DPAK (TO-252) package: surface-mount, single-drain-tab design with exposed drain pad for thermal and electrical connection. Standard 3-pin layout (G-D-S) compatible with IPC-7351B footprint.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Power return path and reference node	Connected to ground plane; carries full load current and defines local 0V reference for gate drive
2 (Gate)	Control terminal for channel modulation	High-impedance input requiring low-inductance routing; sensitive to noise and ringing due to 27S transconductance
3 (Drain)	Main power output terminal	Exposed metal tab - must be soldered to large copper pour for thermal management and low-inductance current path

Key Features

Feature	Design Value
STripFET™ III trench architecture	Delivers benchmark R_DS(on) × Q_g ratio for optimal trade-off between conduction and switching loss in 25V-class FETs
Logic-level gate drive	Guaranteed turn-on with 3.3V/5V controllers - eliminates need for gate driver ICs in many low-voltage applications
Low Q_rr (36nC) and soft-recovery body diode	Minimizes cross-conduction risk and high-side FET turn-on loss in synchronous rectification
ECOPACK® RoHS-compliant packaging	Lead-free second-level interconnect with JEDEC JESD97 marking - meets global environmental compliance requirements
175°C maximum junction temperature	Enables operation in high-ambient environments (e.g., automotive under-hood, industrial enclosures) with proper thermal design

Applications

Server VRM Power Stage

Industrial PLC Output Module

Use Scenario: High-current, multi-phase 12V→0.8V conversion supplying CPU cores in datacenter servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 300–600kHz with precise dead-time control.

Use Value: 6.8mΩ R_DS(on) reduces conduction loss by >35% vs. legacy 10mΩ FETs at 60A, directly improving VRM efficiency and thermal margin.

Use Scenario: Solid-state relay replacement in programmable logic controller digital output cards driving 24V solenoids and indicators.

IC Role / Device Role / Timing Role: Load switch with fast turn-on (<21.6ns fall time) and integrated body diode for inductive kickback clamping.

Use Value: 280mJ avalanche rating eliminates need for external TVS, simplifying BOM and board space in DIN-rail mounted I/O modules.

USB-C PD Fast Charging

Automotive Body Control Module

Use Scenario: Secondary-side synchronous rectification in 100W USB-C PD adapters using GaN primary-side controllers.

IC Role / Device Role / Timing Role: Low-side switch in forward or active-clamp flyback topology, driven by isolated gate signal.

Use Value: 24nC Q_g enables clean 500kHz+ switching with minimal gate driver power consumption and reduced EMI filtering burden.

Use Scenario: Power distribution switch for lighting, HVAC, and window lift subsystems in 12V automotive architectures.

IC Role / Device Role / Timing Role: Protected high-current load switch with built-in overtemperature and short-circuit detection interface.

Use Value: 175°C T_j(max) and -55°C T_stg ensure AEC-Q101 readiness when paired with external protection ICs, supporting extended vehicle life cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 25V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLZ44NPBF	R_DS(on) = 0.028Ω @ 10V (4× higher); Q_g = 67nC (2.8× higher); TO-220 package	Higher conduction loss limits use to ≤25A continuous; through-hole mounting increases layout complexity and thermal resistance	Select only if DPAK footprint is unavailable and thermal budget allows ≥2× higher I²R loss
DMN2020LSD-13	R_DS(on) = 0.0055Ω @ 4.5V; SO-8 package; lower ID (12A); no avalanche rating specified	SO-8 limits current handling; absence of E_AS spec restricts use in unclamped inductive loads	Prefer for space-constrained, low-current logic-level apps where avalanche robustness is not required

Compared with IRLZ44NPBF and DMN2020LSD-13, STD70N02L uniquely balances high current (60A), ultra-low R_DS(on), logic-level drive, and certified avalanche capability in a thermally efficient DPAK package - making it optimal for high-power density, reliability-critical synchronous buck and load-switching designs.

Availability

STD70N02L is available at Aetrix Electronics and suitable for server VRM power stages, industrial PLC output modules, and USB-C PD fast charging systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STD70N02L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STD70N02L belongs to ST's STripFET™ III Power MOSFET product line, engineered specifically for high-efficiency, high-current DC-DC conversion in computing, industrial automation, and portable power applications.

FAQ

Is STD70N02L suitable for high-side switching configurations?

No - STD70N02L is optimized as a low-side switch. Its logic-level gate and low R_DS(on) are ideal for ground-referenced loads, but high-side operation would require a floating gate driver capable of delivering >25V V_GS to overcome source potential, which is not supported by its ±20V V_GS rating. Use dedicated high-side or half-bridge drivers for such topologies.

What is the maximum recommended PCB copper area for thermal performance?

For continuous 60A operation at T_C = 25°C, ST recommends ≥1000 mm² of 2-oz copper connected to the drain tab via ≥6 thermal vias (0.3mm diameter, 0.8mm pitch). This achieves the rated 2.5°C/W R_thj-case; reducing copper area increases junction temperature proportionally per the derating factor of 0.4 W/°C.

Does STD70N02L have built-in ESD protection?

No - STD70N02L lacks integrated ESD protection circuitry. Gate oxide is rated for ±20V V_GS, but human-body-model (HBM) ESD withstand is not specified. Implement external 10kΩ gate resistor and 12V Zener clamp between gate and source during handling and PCB assembly to prevent electrostatic damage.

Can STD70N02L replace STD70N02L-1 in existing designs?

Yes - STD70N02L and STD70N02L-1 share identical electrical specifications (V_DSS, R_DS(on), I_D, Q_g, etc.) and thermal characteristics. The only difference is packaging: STD70N02L uses DPAK in tape-and-reel, while STD70N02L-1 uses IPAK in tube. Footprint and soldering profiles differ; verify mechanical compatibility before substitution.

STD70N02L Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ III

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 8mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 1.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1400 pF @ 16 V

FET Feature:: -

Power Dissipation (Max):: 60W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD70N02L FAQ

1.How can I place an order for STD70N02L through Aetrix?

Please submit a Request for Quotation (RFQ) for STD70N02L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD70N02L reliable?

The price and inventory of STD70N02L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD70N02L is usually 5 days.

3.What payment methods are accepted for STD70N02L?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD70N02L transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD70N02L?

STD70N02L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD70N02L order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD70N02L?

For technical support, including STD70N02L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD70N02L requirements.

6.How does Aetrix verify that STD70N02L is sourced from the original manufacturer or authorized distributors?

All STD70N02L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD70N02L meets industry standards.

7.What is the process for return or replacement of STD70N02L?

All STD70N02L units undergo pre-shipment inspection (PSI). If there is an issue with STD70N02L, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD70N02L part is unused and in its original packaging.

Return procedure for STD70N02L:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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