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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD70N10F4

Name: STD70N10F4
Brand: STMicroelectronics
SKU: STD70N10F4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD70N10F4

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD70N10F4.pdf

Description:: MOSFET N-CH 100V 60A DPAK

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Inventory:1,595

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Product details

Overview

STD70N10F4 from STMicroelectronics is an N-channel 100 V, 60 A, 0.015 Ω R_DS(on) Power MOSFET in DPAK package, designed for high-efficiency switching applications such as DC-DC converters and motor control stages where low conduction loss and robust avalanche capability are critical. It features STripFET™ DeepGATE™ technology, 100% avalanche tested, and operates up to 175 °C junction temperature.

For engineers reviewing the STD70N10F4 datasheet, STD70N10F4 pinout, STD70N10F4 application, or STD70N10F4 equivalent, key selection criteria include its 0.015 Ω on-resistance at V_GS = 10 V, 60 A continuous drain current at T_C = 25 °C, 120 mJ single-pulse avalanche energy, and DPAK thermal resistance of 50 °C/W (junction-to-ambient, FR-4 board).

Technical Context

This MOSFET employs STripFET™ DeepGATE™ architecture with optimized gate structure to minimize R_DS(on) while maintaining fast switching and high dv/dt immunity. Its 100 V V_DSS rating supports industrial and automotive off-battery systems, and it is fully characterized for unclamped inductive switching.

The device integrates a robust body diode with 80 ns reverse recovery time and 6.7 nC Q_rr at T_j = 150 °C, enabling efficient synchronous rectification and flyback operation without external freewheeling diodes in many topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Supports 48 V and 60 V nominal bus systems with 20 %+ safety margin against transients.
R_DS(on) max	0.0195 Ω - Ensures ≤ 70 W conduction loss at 60 A, critical for thermally constrained DPAK layouts.
I_D cont @ T_C=25°C	60 A - Enables high-current switching in compact PCB-mounted power stages.
E_AS	120 mJ - Guarantees reliable operation under unclamped inductive load conditions without snubbers.
C_iss	5800 pF - Defines gate drive power requirement (~85 nC total charge) for 100 kHz–500 kHz PWM operation.
T_j max	175 °C - Allows sustained operation in sealed enclosures or high-ambient environments like motor drives.
Q_gd	25 nC - Controls Miller plateau duration and influences hard-switching EMI and turn-off robustness.

Pinout & Package

STD70N10F4 is housed in a surface-mount DPAK (TO-252) package with exposed drain pad for thermal enhancement. The package has three terminals: Gate (G), Drain (D), and Source (S), with Drain electrically connected to the large copper tab for low-inductance, high-current paths and improved heat dissipation.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Receives 10 V logic-level drive to fully enhance channel; requires <20 nC gate charge for fast switching.
2 (Drain)	High-side power node	Connected to main power rail; ties directly to exposed copper pad for thermal and electrical performance.
3 (Source)	Power return / reference	Serves as local ground reference for gate drive; must be low-inductance path to minimize switching oscillation.

Key Features

Feature	Design Value
STripFET™ DeepGATE™ process	Reduces R_DS(on) by >15 % vs prior-generation DPAK MOSFETs at same voltage class, lowering conduction losses in space-constrained designs.
100 % avalanche rated	Guarantees ruggedness in inductive switching without derating; eliminates need for external clamping in many SMPS and motor driver applications.
Low C_oss (300 pF)	Minimizes capacitive turn-off loss and improves light-load efficiency in resonant and quasi-resonant topologies.
ECOPACK® compliant	Meets RoHS and halogen-free requirements for industrial and consumer electronics with no lead finish restrictions.

Applications

DC-DC Buck Converter

Brushed DC Motor Driver

Use Scenario: 12 V–48 V input, 3.3 V/20 A output step-down converter in telecom power supply.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 300 kHz with 100 ns dead-time control.

Use Value: 0.015 Ω R_DS(on) reduces conduction loss to <1.8 W at full load, enabling natural convection cooling on 1 oz Cu FR-4.

Use Scenario: 24 V H-bridge driving 15 A stall-current brushed motor in automated gate controller.

IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current with integrated body diode commutation.

Use Value: 80 ns t_rr and 6.7 nC Q_rr limit diode recovery loss and EMI during direction reversal.

Industrial LED Driver

AC-DC Auxiliary Supply

Use Scenario: Constant-current 40 V/3 A LED string driver using buck-boost topology with 100 kHz switching.

IC Role / Device Role / Timing Role: Main power switch controlling inductor current in discontinuous conduction mode.

Use Value: 120 mJ E_AS withstands line surges and lamp open-circuit transients without failure.

Use Scenario: 300 V DC input auxiliary supply powering control ICs and gate drivers in PFC + LLC system.

IC Role / Device Role / Timing Role: Primary-side switch in flyback converter operating at 65 kHz with 10 V gate drive.

Use Value: 100 V V_DSS provides sufficient margin over reflected 250 V peak, reducing need for Zener clamping.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF540NPbF	R_DS(on) = 0.044 Ω (higher), Q_g = 71 nC, TO-220 package only	Requires larger heatsink due to higher conduction loss; not surface-mount compatible	Choose when through-hole mounting and lower gate charge priority outweigh R_DS(on) penalty.
STP70N10F4	Same die, TO-220 package; R_DS(on) identical, but R_thj-case = 1.0 °C/W vs 1.2 °C/W for DPAK	Better thermal performance in forced-air or heatsinked setups; incompatible with SMT-only assembly	Choose when board-level thermal management allows TO-220 and higher peak power cycling is required.

Compared with IRF540NPbF and STP70N10F4, STD70N10F4 delivers optimal balance of low R_DS(on), SMT compatibility, and avalanche ruggedness for space-constrained, high-reliability industrial switching-without sacrificing gate drive simplicity or thermal headroom on standard PCBs.

Availability

STD70N10F4 is available at Aetrix Electronics and suitable for DC-DC converters, motor controllers, and industrial LED drivers requiring stable component supply, long-term manufacturability, and RoHS-compliant sourcing.

Supply support for STD70N10F4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STD70N10F4 belongs to ST's STripFET™ DeepGATE™ Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in compact power conversion systems where low R_DS(on), fast switching, and avalanche tolerance are mandatory.

FAQ

What is the maximum continuous drain current for STD70N10F4 at 100 °C case temperature?

The maximum continuous drain current is 43 A at T_C = 100 °C, per Table 2 in the official datasheet (Doc ID 15207 Rev 3). This derating reflects thermal limits of the DPAK package on standard FR-4 board, and must be applied in thermal design calculations for sustained operation.

Does STD70N10F4 require a gate resistor for safe operation in hard-switching applications?

Yes - a gate resistor (typically 4.7 Ω, as used in datasheet switching tests) is recommended to dampen ringing, control dV/dt, and limit peak gate current. Without it, parasitic inductance can cause overshoot exceeding ±20 V gate rating and induce shoot-through in half-bridge configurations.

Can STD70N10F4 replace older STD70N10L or STD70N10T variants in existing designs?

No - STD70N10F4 uses DeepGATE™ technology with lower R_DS(on) and different gate charge profile than legacy L/T versions. While pin-compatible, its faster switching and reduced threshold voltage may require gate drive redesign and layout review to avoid instability or EMI issues.

Is the body diode of STD70N10F4 suitable for synchronous rectification in a buck converter?

Yes - the source-drain diode is characterized with 80 ns t_rr, 6.7 nC Q_rr, and 1.5 V V_SD at 60 A, making it viable for low-frequency synchronous rectification (<200 kHz). However, for high-frequency or zero-voltage switching, a dedicated Schottky or GaN FET is preferred due to lower forward drop and recovery loss.

STD70N10F4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: DeepGATE™, STripFET™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 19.5mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 85 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5800 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD70N10F4 FAQ

1.How can I place an order for STD70N10F4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD70N10F4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD70N10F4 reliable?

The price and inventory of STD70N10F4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD70N10F4 is usually 5 days.

3.What payment methods are accepted for STD70N10F4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD70N10F4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD70N10F4?

STD70N10F4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD70N10F4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD70N10F4?

For technical support, including STD70N10F4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD70N10F4 requirements.

6.How does Aetrix verify that STD70N10F4 is sourced from the original manufacturer or authorized distributors?

All STD70N10F4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD70N10F4 meets industry standards.

7.What is the process for return or replacement of STD70N10F4?

All STD70N10F4 units undergo pre-shipment inspection (PSI). If there is an issue with STD70N10F4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD70N10F4 part is unused and in its original packaging.

Return procedure for STD70N10F4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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