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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD70N2LH5

Name: STD70N2LH5
Brand: STMicroelectronics
SKU: STD70N2LH5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD70N2LH5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD70N2LH5.pdf

Description:: MOSFET N-CH 25V 48A DPAK

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Product details

Overview

STD70N2LH5 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in DPAK package, rated for 25 V V_DS, 48 A continuous drain current at T_C = 25 °C, and 0.0071 Ω max R_DS(on) at V_GS = 10 V. It features STripFET™ V technology, low gate charge (Q_g typ. 8 nC), and high avalanche ruggedness-designed for high-efficiency, high-power-density DC-DC converters.

For engineers reviewing the STD70N2LH5 datasheet, STD70N2LH5 pinout, STD70N2LH5 application, or STD70N2LH5 equivalent, key selection criteria include its 25 V breakdown voltage, sub-7.1 mΩ on-resistance, thermal resistance of 2.5 °C/W (j-case), gate threshold voltage of 1 V min, and suitability for synchronous rectification and primary-side switching in compact power supplies.

Technical Context

This MOSFET implements ST's 5th-generation STripFET™ V process, optimizing the R_DS(on) × Q_g figure-of-merit to minimize conduction and switching losses simultaneously. Its low 0.006 Ω typical R_DS(on) at V_GS = 10 V and 24 A enables high-current operation with minimal I²R heating.

The device supports ±22 V gate drive, exhibits 1300 pF input capacitance (C_iss) at V_DS = 25 V, and delivers 192 A pulsed drain current (I_DM) under SOA-limited conditions-making it suitable for hard-switched topologies requiring fast turn-on/turn-off and robust unclamped inductive switching capability.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum drain-source blocking voltage; defines use in ≤24 V system rails and automotive 12 V/24 V applications.
R_DS(on) max	0.0071 Ω @ V_GS = 10 V, I_D = 24 A - Enables <1.7 W conduction loss at 48 A, critical for thermally constrained PCB layouts.
I_D cont.	48 A @ T_C = 25 °C - High current handling with standard heatsinking; derates to 43 A at 100 °C case temperature.
Q_g	8 nC typ. - Low total gate charge reduces driver power demand and enables efficient 500 kHz+ switching in DC-DC stages.
R_thj-case	2.5 °C/W max - Allows direct mounting to copper pour or heatsink for thermal management without forced air.
V_GS(th)	1 V min - Ensures reliable turn-on with 3.3 V or 5 V logic-level gate drivers, supporting low-voltage control interfaces.
E_AS	TBD - Rated for single-pulse avalanche energy (tested at I_D = 24 A, V_DD = 12 V, T_j = 25 °C); confirms ruggedness in inductive load transients.

Pinout & Package

DPAK (TO-252) package: surface-mount, 3-terminal, single-die configuration with exposed drain pad for thermal and electrical connection. Standard footprint per JEDEC MO-247.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives gate drive signal; requires <22 V absolute max rating; low input capacitance (1300 pF) eases driver design.
2 (Source)	Reference node	Common return path for load current; tied to power ground in low-side switch configurations.
3 (Drain)	Power output node	Connected to high-side rail or inductive load; electrically and thermally linked to exposed backside metal pad.

Key Features

Feature	Design Value
R_DS(on) × Q_g benchmark	Industry-leading FoM enabling simultaneous reduction of conduction and switching losses in high-frequency SMPS.
High avalanche ruggedness	Rated for unclamped inductive switching events without failure-critical for flyback and buck-boost converter reliability.
Low gate drive power loss	Q_g = 8 nC minimizes driver IC power dissipation and allows use of cost-effective SOT-23 gate drivers.
ECOPACK® compliance	Lead-free second-level interconnect and RoHS-compliant packaging meeting JEDEC JESD97 environmental standards.

Applications

Server VRM

Automotive Body Control Module

Use Scenario: Point-of-load (POL) buck converter supplying core voltage to multi-phase CPU/GPU.

IC Role / Device Role: Synchronous rectifier MOSFET in high-side or low-side position.

Use Value: Sub-7.1 mΩ R_DS(on) and 2.5 °C/W thermal resistance enable >95% efficiency at 40–50 A loads without heatsinks.

Use Scenario: 12 V DC-DC step-down for lighting, window lift, and seat control subsystems.

IC Role / Device Role: Primary switching element in isolated or non-isolated buck regulator.

Use Value: 25 V rating and ±22 V gate tolerance ensure robust operation across automotive load-dump transients (up to ±20 V).

Industrial PLC I/O Driver

USB-C PD Power Path

Use Scenario: High-current digital output stage driving solenoids, relays, or small motors.

IC Role / Device Role: Low-side power switch with integrated freewheeling diode conduction.

Use Value: 192 A pulsed current rating and 1.1 V forward diode drop support short-duration inductive kickback without external snubbers.

Use Scenario: 5–20 V bidirectional power path switching in USB-C PD sink applications.

IC Role / Device Role: Reverse-blocking or forward-conducting pass transistor in power delivery controller interface.

Use Value: 1 V gate threshold ensures compatibility with 3.3 V microcontroller GPIOs; low R_DS(on) limits voltage drop during 3 A–5 A charging currents.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLZ44N	R_DS(on) = 0.028 Ω @ V_GS = 5 V; higher on-resistance, lower V_DS (55 V); TO-220 package.	Less suited for high-current, space-constrained DC-DC converters due to larger footprint and higher conduction loss.	Select when 55 V rating and through-hole assembly are required over ultra-low R_DS(on).
STP75NF75	V_DS = 75 V; R_DS(on) = 0.009 Ω @ V_GS = 10 V; TO-220 package; higher Q_g (120 nC).	Designed for higher-voltage industrial motor drives-not optimized for 24 V/48 A high-frequency POL conversion.	Prefer for 48 V bus systems where voltage margin and ruggedness outweigh switching speed requirements.

Compared with IRLZ44N and STP75NF75, STD70N2LH5 offers the lowest R_DS(on) × Q_g product in a surface-mount DPAK, delivering superior power density and thermal performance specifically for 24 V-class high-efficiency DC-DC converters.

Availability

STD70N2LH5 is available at Aetrix Electronics and suitable for server VRMs, automotive body control modules, and industrial PLC I/O drivers requiring stable component supply and long-term production continuity.

Supply support for STD70N2LH5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and analog ICs for industrial, automotive, and consumer markets.

STD70N2LH5 belongs to ST's STripFET™ V Power MOSFET product line-engineered to maximize power density and efficiency in high-frequency switching applications such as point-of-load regulators and automotive DC-DC converters.

FAQ

Is STD70N2LH5 suitable for 5 V gate drive?

Yes-its gate threshold voltage is specified from 1 V min, and R_DS(on) remains low (0.008–0.0104 Ω) at V_GS = 5 V and I_D = 24 A. This enables direct interfacing with 5 V microcontrollers or logic-level drivers without level-shifting circuitry.

What is the maximum junction temperature rating?

The device is rated for continuous operation from –55 °C to +175 °C junction temperature. The absolute maximum T_j is 175 °C, and thermal derating begins at 25 °C case temperature with a slope of 0.4 W/°C beyond 60 W total dissipation.

Does STD70N2LH5 have integrated ESD protection?

No-STD70N2LH5 does not include on-chip ESD protection diodes. External gate protection (e.g., 10–22 Ω series resistor + 12 V Zener clamp) is recommended when exposed to handling or system-level ESD events per IEC 61000-4-2.

Can STD70N2LH5 replace STU70N2LH5 in a design?

Yes-both share identical electrical specs and die, differing only in package: STD70N2LH5 uses DPAK (TO-252), STU70N2LH5 uses IPAK (TO-251). Footprint and thermal interface differ; DPAK offers better thermal resistance (2.5 vs. ~3.0 °C/W), but IPAK may suit specific board thickness constraints.

STD70N2LH5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ V

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 48A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 7.1mOhm @ 24A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8 nC @ 5 V

Vgs (Max):: ±22V

Input Capacitance (Ciss) (Max) @ Vds:: 1300 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 60W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD70N2LH5 FAQ

1.How can I place an order for STD70N2LH5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD70N2LH5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD70N2LH5 reliable?

The price and inventory of STD70N2LH5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD70N2LH5 is usually 5 days.

3.What payment methods are accepted for STD70N2LH5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD70N2LH5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD70N2LH5?

STD70N2LH5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD70N2LH5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD70N2LH5?

For technical support, including STD70N2LH5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD70N2LH5 requirements.

6.How does Aetrix verify that STD70N2LH5 is sourced from the original manufacturer or authorized distributors?

All STD70N2LH5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD70N2LH5 meets industry standards.

7.What is the process for return or replacement of STD70N2LH5?

All STD70N2LH5 units undergo pre-shipment inspection (PSI). If there is an issue with STD70N2LH5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD70N2LH5 part is unused and in its original packaging.

Return procedure for STD70N2LH5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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