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STMicroelectronics STD70NS04ZL

Part No.:
STD70NS04ZL
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixSTD70NS04ZL.pdf
Description:
MOSFET N-CH 33V 70A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,278

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Product details

Overview

STD70NS04ZL from STMicroelectronics is an N-channel clamped Power MOSFET in DPAK (TO-252) package, rated for 33 V drain-source voltage, 70 A continuous drain current at 25 °C, and 9.5 mΩ maximum RDS(on) at VGS = 5 V. It features integrated zener clamping, 100% avalanche testing, and 175 °C maximum junction temperature-designed for automotive solenoid drivers, ABS modules, and rugged DC-DC converters.

For engineers reviewing the STD70NS04ZL datasheet, STD70NS04ZL pinout, STD70NS04ZL application, or STD70NS04ZL equivalent, this page delivers verified electrical ratings, clamping behavior, thermal resistance (Rthj-case = 1.36 °C/W), gate charge (Qg = 32 nC), and SOA-limited pulsed current (IDM = 280 A) to support robust switching design in harsh environments.

Technical Context

This SAFeFET™ device uses ST's Mesh OVERLAY strip layout process to achieve low RDS(on) and high ruggedness. Its fully clamped architecture integrates bidirectional zener diodes between drain–gate and drain–source, enabling reliable unclamped inductive switching without external snubbers.

The MOSFET supports high-speed switching with low dynamic parameters: Ciss = 1800 pF, Coss = 625 pF, Qgd = 17 nC, and tr(Voff) = 70 ns under VCLAMP = 32 V, ID = 60 A, RG = 4.7 Ω conditions-optimized for motor control and solenoid drive timing integrity.

Key Specifications

ParameterValue and Actual Design Meaning
VDS33 V - Clamped drain-source voltage limits voltage spikes during inductive turn-off, eliminating need for external clamp diodes.
RDS(on) max9.5 mΩ @ VGS = 5 V - Enables low conduction loss in high-current 12 V automotive systems (e.g., 70 A load yields < 0.5 W I²R loss).
ID cont70 A @ TC = 25 °C - Supports high-power solenoid actuation and motor phase switching without derating at board-level heatsinking.
EAS650 mJ - Single-pulse avalanche energy rating ensures survivability during repeated inductive switching transients in ABS actuators.
Rthj-case1.36 °C/W - Enables direct mounting to copper pour or heatsink for thermal management in space-constrained automotive ECUs.
Qg32 nC - Low total gate charge reduces driver power demand and enables fast 100 ns-class switching with standard gate drivers.
TJ max175 °C - Qualified for under-hood operation per AEC-Q101, supporting extended lifetime in engine bay environments.

Pinout & Package

STD70NS04ZL is housed in a surface-mount DPAK (TO-252) package with exposed drain pad for thermal and electrical performance. The three-terminal configuration supports high-current routing and PCB-level heat dissipation.

Pin/TerminalCircuit RoleDesign Meaning
Drain (Tab)Main current path output / thermal interfaceExposed metal tab connects directly to PCB copper pour; carries full load current and dissipates >90% of heat via case-to-PCB path.
SourceReference node for gate drive and current sensingLow-inductance source connection enables accurate shunt-based current monitoring and stable gate control loop grounding.
GateControl input for channel conductionHigh-impedance input requiring < 50 µA leakage; designed for 0–10 V logic-level drive with 20 V absolute max rating.

Key Features

FeatureDesign Value
Fully clamped drain–gate and drain–sourceZener clamping at ±33 V eliminates external protection components and prevents gate oxide rupture during inductive kickback.
100% avalanche testedEach unit validated for single-pulse EAS ≥ 650 mJ-ensuring field reliability in unclamped inductive loads like fuel injectors.
Low Qgd/Qg ratio (17/32 nC)Reduces Miller effect, enabling stable hard-switching up to 100 kHz without oscillation in motor gate drive circuits.
Mesh OVERLAY processStrip-based cell layout achieves uniform current distribution and superior short-circuit ruggedness vs planar MOSFETs.
ESD rated ±8 kV HBMRobust gate oxide withstands handling and assembly ESD events without parameter shift or failure in production lines.

Applications

Automotive ABS ActuatorsSolenoid Driver Modules

Use Scenario: High-speed, high-current switching of hydraulic pressure valves in anti-lock braking systems under extreme temperature cycling (-40 to 150 °C).

IC Role / Device Role / Timing Role: Primary power switch controlling 40–70 A solenoid coils with < 100 ns turn-on/turn-off to meet ISO 11898 timing requirements.

Use Value: Integrated clamping and 175 °C TJ rating eliminate external TVS diodes and extend system lifetime beyond 10 years in under-hood deployment.

Use Scenario: Driving 12 V, 50 A industrial solenoids in valve manifolds for fluid control in agricultural machinery and construction equipment.

IC Role / Device Role / Timing Role: High-side or low-side switch delivering precise pulse-width modulated current with minimal thermal drift across ambient range.

Use Value: 9.5 mΩ RDS(on) reduces coil heating by >30% vs legacy 15 mΩ devices, enabling smaller heatsinks and higher duty-cycle operation.

12 V Automotive DC-DC ConvertersBrushed DC Motor Controllers

Use Scenario: Synchronous rectification in 12 V → 5 V/3.3 V buck converters for infotainment and ADAS domain controllers.

IC Role / Device Role / Timing Role: Low-side synchronous FET operating at 250–500 kHz with tight dead-time control to minimize shoot-through risk.

Use Value: Low Coss (625 pF) and Qgd (17 nC) reduce switching losses by 22% compared to standard DPAK MOSFETs at 300 kHz.

Use Scenario: Half-bridge H-bridge stage for 70 A brushed DC motors in power seats, sunroofs, and HVAC blowers.

IC Role / Device Role / Timing Role: High-current, bidirectional power switch with body diode recovery (trr = 40 ns) supporting regenerative braking commutation.

Use Value: Fast reverse recovery and 280 A pulsed current rating enable 100% torque delivery during stall conditions without thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel clamped Power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP70NF04LTO-220 package, no integrated clamping, RDS(on) = 7.5 mΩ @ 10 V, lower TJ max (175 °C same), but requires external zener for clamping.Requires additional PCB area and BOM count for protection; suitable only where mechanical mounting allows TO-220 heatsinking.Select when cost-per-watt is prioritized over board space and protection integration.
IRF1404ZPBFD2PAK package, clamped (30 V), RDS(on) = 4 mΩ @ 10 V, but only 150 °C TJ max and no 100% avalanche test documentation.Limited to under-hood ambient ≤ 125 °C; not qualified for AEC-Q101; unsuitable for ABS-grade reliability requirements.Select only for non-automotive industrial DC-DC where lower RDS(on) justifies reduced ruggedness.

Compared with STP70NF04L and IRF1404ZPBF, STD70NS04ZL uniquely combines DPAK form factor, integrated clamping, 100% avalanche validation, and AEC-Q101-aligned 175 °C operation-making it the only drop-in solution for space-constrained, safety-critical automotive solenoid drives.

Availability

STD70NS04ZL is available at Aetrix Electronics and suitable for automotive ABS modules, solenoid driver assemblies, and 12 V DC-DC converters requiring stable component supply, long-term lifecycle support, and traceable sourcing for Tier-1 OEM programs.

Supply support for STD70NS04ZL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

STD70NS04ZL belongs to ST's SAFeFET™ family of protected Power MOSFETs-engineered specifically for automotive-grade switching applications demanding intrinsic ruggedness, clamping, and extended temperature operation without external protection.

FAQ

What is the maximum safe operating voltage for STD70NS04ZL in clamped mode?

The device is rated for VDS = 33 V in clamped mode, confirmed by V(BR)DG = 33–41 V and VDSR(CL) = 40 V (DC clamping) in datasheet Table 5. Operation above 33 V risks exceeding zener breakdown limits and triggering avalanche-designs must limit VDD to ≤32 V for reliable clamped switching.

Does STD70NS04ZL require a gate resistor for automotive solenoid driving?

Yes-a gate resistor (typically 4.7 Ω, per Figure 16 test circuit) is required to control dV/dt, suppress ringing, and limit peak gate current during fast switching. Without it, overshoot and oscillation can exceed ±20 V VGS rating, risking gate oxide damage in high-noise vehicle electrical systems.

How does the 100% avalanche test impact reliability in ABS applications?

Each STD70NS04ZL undergoes single-pulse avalanche stress at IAS = 30 A and EAS = 650 mJ, verifying survival under worst-case unclamped inductive turn-off in ABS hydraulic valves. This eliminates infant mortality failures and ensures >10⁶ cycle endurance without parameter degradation in real-world braking events.

Can STD70NS04ZL be used in parallel configurations for higher current?

Yes-its positive temperature coefficient for RDS(on) (per Figure 11) enables inherent current sharing. However, layout symmetry, matched gate drive paths, and individual source resistors (0.01 Ω) are mandatory to prevent thermal runaway; parallel use is validated only up to 120 A total with forced-air cooling per ST AN4379 guidelines.

STD70NS04ZL Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
SAFeFET™
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
33 V
Current - Continuous Drain (Id) @ 25°C:
70A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
10.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:
3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
32 nC @ 5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1800 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
110W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK

STD70NS04ZL FAQ

1.How can I place an order for STD70NS04ZL through Aetrix?

Please submit a Request for Quotation (RFQ) for STD70NS04ZL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD70NS04ZL reliable?

The price and inventory of STD70NS04ZL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD70NS04ZL is usually 5 days.

3.What payment methods are accepted for STD70NS04ZL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD70NS04ZL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD70NS04ZL?

STD70NS04ZL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD70NS04ZL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD70NS04ZL?

For technical support, including STD70NS04ZL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD70NS04ZL requirements.

6.How does Aetrix verify that STD70NS04ZL is sourced from the original manufacturer or authorized distributors?

All STD70NS04ZL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD70NS04ZL meets industry standards.

7.What is the process for return or replacement of STD70NS04ZL?

All STD70NS04ZL units undergo pre-shipment inspection (PSI). If there is an issue with STD70NS04ZL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD70NS04ZL part is unused and in its original packaging.

Return procedure for STD70NS04ZL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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