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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD75N3LLH6

Name: STD75N3LLH6
Brand: STMicroelectronics
SKU: STD75N3LLH6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD75N3LLH6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD75N3LLH6.pdf

Description:: MOSFET N-CH 30V 75A DPAK

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Product details

Overview

STD75N3LLH6 from STMicroelectronics is an N-channel 30 V, 75 A Power MOSFET in DPAK (TO-252) package with R_DS(on) = 4.2 mΩ @ V_GS = 10 V and 37.5 A, high avalanche ruggedness, and low gate charge (Q_g = 17–23.8 nC). It serves as a primary switching element in high-current DC-DC converters and motor drive half-bridges.

For engineers reviewing the STD75N3LLH6 datasheet, STD75N3LLH6 pinout, STD75N3LLH6 application, or STD75N3LLH6 equivalent, key selection criteria include on-resistance at 4.5 V gate drive, thermal resistance junction-to-case (2.5 °C/W), safe operating area under unclamped inductive load, and compatibility with standard DPAK PCB footprints.

Technical Context

This device implements ST's STripFET™ VI DeepGATE™ architecture, featuring a refined gate structure that reduces R_DS(on) × Q_g product-the industry benchmark for switching efficiency. Its optimized cell layout delivers lowest R_DS(on) across DPAK, TO-220, IPAK, and Short IPAK packages.

The MOSFET supports high-pulsed drain current (I_DM = 300 A), exhibits robust unclamped inductive switching capability, and maintains stable V_GS(th) (1.0–2.5 V) and R_DS(on) over −55 °C to 175 °C junction temperature range-enabling reliable operation in thermally demanding power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V nominal bus systems and automotive 12 V/24 V applications.
R_DS(on) max	4.2 mΩ @ V_GS = 10 V, I_D = 37.5 A - Enables <1.2 W conduction loss at 75 A continuous drain current with adequate heatsinking.
I_D (cont)	75 A @ T_C = 25 °C - Supports high-current loads such as BLDC motor phases or high-power synchronous rectifiers.
Q_g	17–23.8 nC - Low gate charge reduces driver power loss and enables fast switching with standard gate drivers (e.g., STMicroelectronics STL120N).
R_thj-case	2.5 °C/W - Allows 60 W dissipation at ΔT = 150 °C, supporting compact thermal design in DPAK-mounting configurations.
Safe Operating Area	Rated for unclamped inductive switching (UIS) up to E_AS = 220 mJ - Confirmed per Figure 2 and Figure 16 test circuit; critical for motor control fault tolerance.
V_GS(th)	1.0–2.5 V - Ensures turn-on with logic-level gate drivers (3.3 V/5 V) while maintaining noise immunity via defined threshold window.

Pinout & Package

DPAK (TO-252) package: surface-mount, single-row 3-lead outline with exposed drain tab for thermal and electrical connection. Tab is electrically connected to Drain (Pin 2).

Pin/Terminal	Circuit Role	Design Meaning
1	Gate (G)	Control terminal; requires ≤±20 V gate-source voltage; low input capacitance (C_iss = 1350–2030 pF) eases driver selection.
2	Drain (D) / Tab	Main power output node; tab provides low-thermal-resistance path to PCB copper pour; must be isolated from other potentials unless referenced to system ground.
3	Source (S)	Power return path; referenced to gate drive common; source inductance directly impacts switching overshoot and dV/dt immunity.

Key Features

Feature	Design Value
R_DS(on) × Q_g benchmark	Industry-leading figure-of-merit enabling high-efficiency switching at 100–500 kHz in synchronous buck converters.
High avalanche ruggedness	Rated for repetitive unclamped inductive switching (E_AS = 220 mJ); eliminates need for external snubbers in motor phase-leg designs.
Low gate drive power loss	Q_g = 17–23.8 nC at V_DD = 15 V ensures <15 mW average gate power at 100 kHz, reducing driver IC thermal load.
Thermal performance	R_thj-case = 2.5 °C/W allows full 75 A rating with minimal heatsink-ideal for space-constrained industrial power modules.
Logic-level compatible	V_GS(th) range (1.0–2.5 V) guarantees turn-on with 3.3 V microcontroller GPIOs without level-shifting circuitry.

Applications

Motor Drive Half-Bridge

High-Current DC-DC Converter

Use Scenario: High-side and low-side switching in 24 V BLDC motor controllers for HVAC blowers and industrial pumps.

IC Role / Device Role / Timing Role: Power switch in half-bridge topology; handles 75 A peak phase current with <100 ns switching transitions.

Use Value: Low R_DS(on) minimizes I²R losses during PWM conduction; high UIS rating withstands back-EMF transients during commutation faults.

Use Scenario: Synchronous rectifier in 24 V input → 5 V/30 A isolated DC-DC module for telecom power shelves.

IC Role / Device Role / Timing Role: Secondary-side synchronous FET; operates at 300 kHz with 5 V gate drive from transformer-coupled driver.

Use Value: 4.2 mΩ R_DS(on) reduces conduction loss by >40% vs. comparable 5 mΩ devices, improving full-load efficiency from 92.1% to 93.4%.

Automotive Body Control Module

Industrial Solenoid Driver

Use Scenario: Load switch for 12 V/24 V solenoids and lamps in vehicle door modules and seat control units.

IC Role / Device Role / Timing Role: High-side driver with integrated charge pump; controlled via CAN/LIN interface MCU GPIO.

Use Value: Logic-level V_GS(th) enables direct drive from 3.3 V MCU outputs; 300 A pulsed rating supports inrush current of 200 ms solenoid actuation.

Use Scenario: High-reliability 48 V solenoid actuator driver in factory automation valves and pneumatic controls.

IC Role / Device Role / Timing Role: Single-ended switch with flyback diode clamping; driven by optocoupled PWM signal.

Use Value: 175 °C max T_j and 2.5 °C/W R_thj-case sustain 100% duty cycle operation in sealed enclosures without forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 4.5 mΩ @ 10 V, Q_g = 26 nC, TO-252 package, V_DS = 30 V	Higher Q_g increases gate drive loss; slightly higher R_DS(on) raises conduction loss at >50 A	Acceptable where gate drive strength exceeds 2 A peak and thermal margin >10 °C exists.
DMT3006LPS-13	R_DS(on) = 4.0 mΩ @ 10 V, Q_g = 21 nC, PowerDI3333 package, V_DS = 30 V	Lower R_DS(on) but smaller thermal pad area (R_thj-pcb = 42 °C/W vs. 35 °C/W for STD75N3LLH6)	Preferred for ultra-compact layouts with aggressive PCB copper; less suitable for sustained >60 A operation without enhanced cooling.

Compared with IRF7470PBF and DMT3006LPS-13, STD75N3LLH6 offers optimal balance of low R_DS(on), moderate Q_g, and proven DPAK thermal performance-making it the preferred choice for industrial motor drives requiring both efficiency and ruggedness.

Availability

STD75N3LLH6 is available at Aetrix Electronics and suitable for motor drive half-bridges, high-current DC-DC converters, and automotive body control modules requiring stable component supply and long-term industrial lifecycle support.

Supply support for STD75N3LLH6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MEMS, power, and microcontroller solutions for industrial, automotive, and consumer markets.

STD75N3LLH6 belongs to ST's STripFET™ VI Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 12–48 V power systems-including motor control, power supplies, and load switching.

FAQ

What is the maximum continuous drain current for STD75N3LLH6 at 100 °C case temperature?

The maximum continuous drain current is 47 A at T_C = 100 °C, as specified in Table 2 of the official datasheet (Doc ID 15978 Rev 4). This derating reflects thermal limits imposed by R_thj-case = 2.5 °C/W and P_TOT = 60 W at 25 °C, with linear derating of 0.4 W/°C above 25 °C.

Does STD75N3LLH6 require a gate resistor for safe operation in hard-switching applications?

Yes-a gate resistor (typically 4.7 Ω) is recommended to control dV/dt and suppress ringing, as validated in Figure 13 test circuit. The device's C_iss = 1350–2030 pF and Q_g = 17–23.8 nC make it sensitive to parasitic oscillation without proper gate damping, especially at >100 kHz switching frequencies.

Can STD75N3LLH6 be used in parallel configurations for higher current handling?

Yes-its positive temperature coefficient of R_DS(on) (see Figure 11) ensures inherent current sharing when paralleled. However, matched layout symmetry (equal trace inductance/resistance), individual gate resistors, and thermal coupling via shared heatsink are mandatory to avoid imbalance and localized overheating.

Is STD75N3LLH6 compliant with RoHS and REACH regulations?

Yes-STD75N3LLH6 is manufactured in STMicroelectronics' ECOPACK®-compliant DPAK package, meeting RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. Full compliance documentation is available via ST's quality portal using order code STD75N3LLH6.

STD75N3LLH6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: DeepGATE™, STripFET™ VI

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.5mOhm @ 37.5A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1690 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 60W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD75N3LLH6 FAQ

1.How can I place an order for STD75N3LLH6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD75N3LLH6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD75N3LLH6 reliable?

The price and inventory of STD75N3LLH6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD75N3LLH6 is usually 5 days.

3.What payment methods are accepted for STD75N3LLH6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD75N3LLH6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD75N3LLH6?

STD75N3LLH6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD75N3LLH6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD75N3LLH6?

For technical support, including STD75N3LLH6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD75N3LLH6 requirements.

6.How does Aetrix verify that STD75N3LLH6 is sourced from the original manufacturer or authorized distributors?

All STD75N3LLH6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD75N3LLH6 meets industry standards.

7.What is the process for return or replacement of STD75N3LLH6?

All STD75N3LLH6 units undergo pre-shipment inspection (PSI). If there is an issue with STD75N3LLH6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD75N3LLH6 part is unused and in its original packaging.

Return procedure for STD75N3LLH6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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