STMicroelectronics STD78N75F4

Overview

STD78N75F4 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in DPAK package, rated for 75 V drain-source voltage, 0.0092 Ω typical R_DS(on) at V_GS = 10 V and I_D = 35 A, and 70 A continuous drain current at T_C = 25 °C. It delivers low gate charge (76 nC) and high avalanche ruggedness (185 mJ single-pulse), making it suitable for high-efficiency DC-DC converters and motor drive half-bridges.

For engineers reviewing the STD78N75F4 datasheet, STD78N75F4 pinout, STD78N75F4 application, or STD78N75F4 equivalent, key selection criteria include its DPAK thermal resistance (R_thj-pcb = 50 °C/W on FR-4), fast switching (t_d(off) = 61 ns typ), and integrated source-drain diode with 67 ns reverse recovery time - critical for synchronous rectification and inductive load control.

Technical Context

This device employs ST's STripFET™ DeepGATE™ process, featuring a refined gate structure to reduce specific on-resistance while maintaining robust safe operating area (SOA) performance up to 280 A pulsed drain current. Its 100% avalanche-rated design ensures reliability under unclamped inductive switching stress.

The MOSFET operates with a gate threshold voltage of 2–4 V and supports ±20 V gate-source voltage, enabling direct drive from standard logic-level controllers. Its low C_iss (5015 pF) and C_rss (218 pF) support high-frequency PWM operation above 100 kHz without excessive gate driver losses.

Key Specifications

Pinout & Package

STD78N75F4 is housed in a surface-mount DPAK (TO-252) package with three terminals: Gate (G), Drain (D), and Source (S). The package features exposed drain tab for thermal conduction to PCB copper, and is lead-free and RoHS-compliant per ECOPACK® specifications.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRFZ44NPBF, STD78N75F4 delivers 67 % lower conduction loss and 20 % faster switching, justifying its use in thermally constrained, high-efficiency designs; versus STP78N75F4, it trades 11 % lower continuous current for 30 % smaller footprint and superior PCB thermal coupling.

Availability

STD78N75F4 is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC power supplies, uninterruptible power systems, and solenoid control requiring stable component supply across multi-year production cycles.

Supply support for STD78N75F4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STD78N75F4 belongs to ST's STripFET™ F4 high-voltage Power MOSFET product line, engineered specifically for high-current, high-frequency switching in compact SMT power stages where thermal density and avalanche robustness are critical.

FAQ

What is the maximum recommended gate-source voltage for STD78N75F4?

The absolute maximum V_GS is ±20 V, but ST recommends limiting gate drive to +10 V to ensure long-term reliability and avoid accelerated gate oxide degradation. Operation at 12–15 V is possible for transient conditions but reduces lifetime due to increased gate leakage and hot-carrier injection.

Can STD78N75F4 be used in linear (analog) mode operation?

No - STD78N75F4 is not characterized or guaranteed for linear mode operation. Its SOA curve shows limited safe operating area below 10 V V_DS, and prolonged operation in the linear region risks thermal runaway due to positive temperature coefficient of R_DS(on) and insufficient thermal feedback.

Is the source-drain diode suitable for reverse polarity protection?

No - the integrated body diode has V_SD = 1.5 V at 70 A and is not optimized for reverse-biased blocking. For reverse polarity protection, a dedicated low-V_F Schottky or MOSFET-based ideal diode circuit is required to avoid excessive forward drop and power loss.

Does STD78N75F4 require a gate resistor for stability?

Yes - a series gate resistor (typically 4.7–10 Ω) is required to dampen ringing caused by gate loop inductance and Miller capacitance interaction. Without it, parasitic oscillation can exceed V_GS ratings and cause erratic switching or device failure, especially at high dV/dt edges (>50 V/ns).