STMicroelectronics STD7LN80K5

Overview

STD7LN80K5 from STMicroelectronics is a high-voltage N-channel Power MOSFET using MDmesh K5 vertical structure technology, rated for 800 V V_DS, 0.95 Ω typical R_DS(on) at V_GS = 10 V and 2.5 A, with 12 nC total gate charge and 100% avalanche tested. It serves as a primary switching device in high-efficiency offline SMPS, PFC stages, and industrial AC-DC converters operating up to 150 °C junction temperature.

For engineers reviewing the STD7LN80K5 datasheet, STD7LN80K5 pinout, STD7LN80K5 application, or STD7LN80K5 equivalent, key selection criteria include its ultra-low R_DS(on) × area FoM, 50 V/ns MOSFET dv/dt ruggedness, Zener-protected gate, and DPAK (TO-252) thermal resistance of 1.47 °C/W junction-to-case - critical for high-density power supply designs requiring robust unclamped inductive switching capability.

Technical Context

This MOSFET employs ST's proprietary MDmesh K5 vertical superjunction architecture, enabling 800 V breakdown voltage while minimizing specific on-resistance and gate charge. Its optimized cell layout delivers industry-leading figure of merit (R_DS(on) × Q_g) of 11.4 Ω·nC, directly supporting high-frequency operation above 100 kHz in resonant and hard-switched topologies.

The device integrates a monolithic Zener diode between gate and source for ESD and overvoltage protection, and features a fully characterized body diode with 276 ns reverse recovery time (T_J = 25 °C) and 2.13 µC Q_rr, enabling reliable operation in continuous conduction mode (CCM) PFC and flyback snubberless designs.

Key Specifications

Pinout & Package

STD7LN80K5 is housed in a DPAK (TO-252) package with exposed drain tab (Tab) for thermal and electrical connection. The package uses standard Type A2 mechanical dimensions per DS11434 Rev 2, with 6.0–6.2 mm width (D), 6.4–6.6 mm length (E), and 9.35–10.10 mm height (H). The drain tab occupies the full underside center region and must be soldered to a large copper pour for thermal performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP7LN80K5 and IPP60R190C7, STD7LN80K5 uniquely balances 800 V capability, DPAK mountability, and 12 nC gate charge - making it the only SMT-compatible option delivering full-rated avalanche robustness and Zener gate protection without thermal or layout compromise.

Availability

STD7LN80K5 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, server & telecom rectifiers, and LED streetlight drivers requiring stable component supply, long-term lifecycle support, and traceable sourcing for high-reliability deployments.

Supply support for STD7LN80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in automotive, industrial, and power discrete solutions with over 40 years of high-voltage MOSFET innovation.

STD7LN80K5 belongs to ST's MDmesh K5 high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-power-density offline switching applications where low R_DS(on) × Q_g FoM and avalanche ruggedness are mandatory design requirements.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous drain current (I_D) at T_C = 100 °C is 3.4 A, as specified in Table 1 of DS11434 Rev 2. This value accounts for thermal derating due to reduced channel conductivity and increased R_DS(on) at elevated temperatures, and must be used with the 1.47 °C/W R_thJC to calculate allowable power dissipation in thermal design.

Does STD7LN80K5 include integrated gate protection?

Yes - STD7LN80K5 integrates a monolithic Zener diode between gate and source, rated for ±30 V V_GS absolute maximum. This provides inherent protection against electrostatic discharge and gate overvoltage events during handling, PCB assembly, and system operation, eliminating the need for external gate clamping components in most designs.

Can STD7LN80K5 replace older MDmesh K3 or K4 devices in existing designs?

Yes, STD7LN80K5 is a direct drop-in replacement for STD7N80K3 and STD7N80K4 in DPAK footprint, offering identical pinout and improved parameters: 15% lower R_DS(on), 20% lower Q_g, and enhanced 50 V/ns dv/dt ruggedness. No layout or gate drive changes are required, though efficiency gains may allow reduction of heatsink size or increase in switching frequency.

What is the safe operating area (SOA) limitation at 100 µs pulse width?

At t_p = 100 µs, the SOA curve (Figure 1) limits continuous operation to approximately 4.5 A at 400 V V_DS and 2.5 A at 600 V V_DS, bounded by R_DS(on) conduction and thermal constraints. This defines the maximum non-repetitive surge current capability during startup, overload, or fault conditions without device failure.