STMicroelectronics STD7N65M2
- Part No.:
- STD7N65M2
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
STD7N65M2.pdf
- Description:
- MOSFET N-CH 650V 5A DPAK
- Quantity:
- Payment:

- Shipping:

Inventory:68
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Product details
Overview
STD7N65M2 from STMicroelectronics is an N-channel 650 V, 0.98 Ω typ. RDS(on), 5 A MDmesh™ M2 Power MOSFET in DPAK (TO-252) package. It delivers low gate charge (9 nC), optimized Coss profile (14.5 pF typ.), and 100% avalanche tested ruggedness. It serves as a primary switching device in high-efficiency AC-DC adapters and offline SMPS.
For engineers reviewing the STD7N65M2 datasheet, STD7N65M2 pinout, STD7N65M2 application, or STD7N65M2 equivalent, key selection criteria include its 650 V V(BR)DSS, 1.15 Ω max RDS(on) at 10 VGS, 2.08 °C/W Rthj-case, and Zener-protected gate structure for robust gate drive integrity.
Technical Context
This MOSFET employs ST's MDmesh™ M2 strip-based vertical structure to simultaneously minimize conduction loss and switching loss. Its low Ciss (270 pF typ.) and ultra-low Qgd/Qgs ratio (4.3/2.3 nC) enable fast, controllable turn-on/turn-off with reduced Miller effect.
The device integrates a monolithic Zener diode between gate and source for ±25 VGS protection, and features a fully characterized body diode with 275 ns trr (Tj = 25°C) and 1.62 µC Qrr, supporting hard-switched and quasi-resonant topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 650 V - Withstands full mains-referenced DC bus in universal-input 85–265 VAC converters. |
| RDS(on) max | 1.15 Ω @ VGS = 10 V - Enables <1.5 W conduction loss at 5 A continuous drain current. |
| Qg | 9 nC - Reduces gate driver power requirement and enables efficient operation at >100 kHz switching frequencies. |
| Coss | 14.5 pF typ. - Minimizes capacitive turn-off loss and improves light-load efficiency in flyback and LLC designs. |
| Tj max | 150 °C - Supports reliable operation in enclosed industrial power supplies with limited airflow. |
| EAS | 103 mJ - Provides unclamped inductive switching margin for transformer reset and snubberless designs. |
| Rthj-case | 2.08 °C/W - Allows 60 W total dissipation at TC = 25°C, enabling compact heatsink integration. |
Pinout & Package
DPAK (TO-252) package: surface-mount, single-die layout with exposed drain tab for thermal and electrical connection. Tab is electrically connected to Drain (Pin 2).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Pin 1) | Gate control input | Low-impedance node requiring <9 nC charge for full enhancement; Zener-protected to ±25 V. |
| S (Pin 3) | Source reference | Common return path for load current and gate drive loop; connects to PCB ground plane. |
| D / TAB (Pin 2) | Drain output & thermal interface | High-voltage output terminal and primary thermal conduction path to heatsink or copper pour. |
Key Features
| Feature | Design Value |
|---|---|
| MDmesh™ M2 technology | Enables 0.98 Ω RDS(on) at 650 V rating-25% lower on-resistance than prior-generation 650 V superjunction MOSFETs. |
| 100% avalanche tested | Guarantees single-pulse EAS ≥ 103 mJ per unit, eliminating need for external clamping in flyback transformer reset. |
| Zener-protected gate | Integrated 25 V bidirectional Zener prevents gate oxide rupture during layout parasitic ringing or hot-swap transients. |
| Optimized Coss profile | Coss remains stable across 0–520 V, reducing voltage-dependent switching loss in resonant converters. |
Applications
| Server PSU Primary Switch | Industrial AC-DC Adapter |
|---|---|
Use Scenario: High-density 1U server power supply operating at 100 kHz with active clamp forward topology. IC Role / Device Role / Timing Role: Main switch controlling energy transfer from bulk DC bus to transformer primary. Use Value: 1.15 Ω RDS(on) and 9 nC Qg reduce combined conduction + switching loss to <2.1 W at 5 A/380 V, enabling >94% efficiency at full load. | Use Scenario: DIN-rail mounted 24 V/15 A industrial adapter with universal AC input and reinforced isolation. IC Role / Device Role / Timing Role: Primary-side switching element in discontinuous conduction mode (DCM) flyback converter. Use Value: 103 mJ EAS withstands transformer leakage inductance spikes without snubber, simplifying BOM and improving reliability. |
| LED Driver Secondary Side | EV Onboard Charger Stage |
Use Scenario: Constant-current LED driver for street lighting using quasi-resonant buck-boost architecture. IC Role / Device Role / Timing Role: Synchronous rectifier and PWM-controlled current regulator in secondary-side regulation loop. Use Value: Low Coss (14.5 pF) and fast trr (275 ns) minimize reverse recovery loss during zero-voltage switching transitions. | Use Scenario: Interleaved PFC front-end stage in 6.6 kW EV onboard charger with 650 V DC link. IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM) PFC circuit handling 10 A peak line current. Use Value: Rthj-case of 2.08 °C/W allows direct mounting to aluminum chassis, eliminating discrete heatsink and saving 12 cm² board area. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP7N65M2 | Same MDmesh™ M2 die, but TO-220 package with higher Rthj-case (1.5 °C/W) and no exposed tab soldering. | Requires bolted heatsink; unsuitable for space-constrained SMT layouts. | Select when mechanical mounting flexibility outweighs PCB area constraints and thermal performance is less critical. |
| FDPF7N65NZ | 650 V, 1.2 Ω RDS(on), 9.5 nC Qg, but no integrated gate Zener and only 75 mJ EAS. | Lacks built-in gate protection and avalanche margin; requires external gate clamp and snubber design. | Select only if cost sensitivity dominates and design team has proven expertise in gate drive layout and transient suppression. |
Compared with STP7N65M2 and FDPF7N65NZ, STD7N65M2 uniquely combines DPAK SMT compatibility, Zener-protected gate, and 103 mJ EAS-making it optimal for compact, high-reliability offline converters where layout simplicity and field robustness are prioritized.
Availability
STD7N65M2 is available at Aetrix Electronics and suitable for server PSUs, industrial AC-DC adapters, LED drivers, and EV onboard charger stages requiring stable component supply and long-term production continuity.
Supply support for STD7N65M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.
STD7N65M2 belongs to ST's MDmesh™ M2 high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-power-density offline SMPS and industrial motor drives operating up to 650 V.
FAQ
What is the maximum continuous drain current at 100°C case temperature?
The STD7N65M2 supports 3.2 A continuous drain current at TC = 100°C, as specified in Table 2 (Absolute Maximum Ratings). This derating reflects thermal limits under real-world heatsink conditions and must be verified against actual PCB copper area and ambient airflow in final layout.
Does the body diode support synchronous rectification in LLC resonant converters?
Yes-the body diode exhibits 275 ns reverse recovery time (trr) and 1.62 µC Qrr at Tj = 25°C, enabling use in self-driven synchronous rectification schemes. However, its VSD = 1.6 V at 5 A means external Schottky diodes may still be preferred for ultra-low-loss secondary-side designs.
Is the DPAK package lead-free and RoHS compliant?
Yes-STD7N65M2 is supplied in ECOPACK®-compliant DPAK (TO-252) packaging, meeting RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. The device uses matte tin plating on leads and halogen-free molding compound.
Can this MOSFET replace older STD7N60DM2 in existing designs?
No-STD7N65M2 has higher V(BR)DSS (650 V vs. 600 V) and slightly higher RDS(on) (1.15 Ω vs. 0.95 Ω), but identical pinout and gate drive requirements. Replacement is feasible only if system overvoltage margin permits and thermal design accommodates the 0.2 Ω increase; validation of EAS and dv/dt ruggedness is mandatory.
STD7N65M2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.15Ohm @ 2.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 9 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 270 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 60W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
STD7N65M2 FAQ
1.How can I place an order for STD7N65M2 through Aetrix?
Please submit a Request for Quotation (RFQ) for STD7N65M2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STD7N65M2 reliable?
The price and inventory of STD7N65M2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD7N65M2 is usually 5 days.
3.What payment methods are accepted for STD7N65M2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD7N65M2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STD7N65M2?
STD7N65M2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STD7N65M2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STD7N65M2?
For technical support, including STD7N65M2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD7N65M2 requirements.
6.How does Aetrix verify that STD7N65M2 is sourced from the original manufacturer or authorized distributors?
All STD7N65M2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD7N65M2 meets industry standards.
7.What is the process for return or replacement of STD7N65M2?
All STD7N65M2 units undergo pre-shipment inspection (PSI). If there is an issue with STD7N65M2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STD7N65M2 part is unused and in its original packaging.
Return procedure for STD7N65M2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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