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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD7N90K5

Name: STD7N90K5
Brand: STMicroelectronics
SKU: STD7N90K5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD7N90K5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD7N90K5.pdf

Description:: MOSFET N-CH 900V 7A DPAK

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Product details

Overview

STD7N90K5 from STMicroelectronics is a high-voltage N-channel Power MOSFET based on MDmesh K5 vertical structure, delivering 900 V V_DS, 0.81 Ω R_DS(on) max at 10 V V_GS, and 7 A continuous drain current at T_C = 25 °C. It serves as a primary switching device in high-efficiency offline SMPS, PFC stages, and industrial HV DC-DC converters.

For engineers reviewing the STD7N90K5 datasheet, STD7N90K5 pinout, STD7N90K5 application, or STD7N90K5 equivalent, key selection criteria include avalanche ruggedness (230 mJ E_AS), ultra-low Q_g (12 nC), dv/dt immunity (50 V/ns), and Zener-protected gate integrity-critical for reliable operation in hard-switched 400–800 V bus systems.

Technical Context

This MOSFET employs ST's proprietary MDmesh K5 technology, featuring a refined vertical charge-balance structure that reduces specific on-resistance by ~30% versus prior K3/K4 generations while maintaining robust 900 V breakdown. Its optimized cell layout minimizes C_iss (425 pF) and Crss (1.2 pF), enabling fast, low-loss switching with minimal Miller-induced oscillation risk.

The integrated Zener-protected gate ensures ±30 V V_GS tolerance and eliminates external gate clamping in high-noise environments. Avalanche testing confirms 2.4 A repetitive I_AR and 230 mJ single-pulse E_AS at T_j = 25 °C-validating suitability for unclamped inductive switching in flyback and resonant topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	900 V - supports direct connection to 600–800 V DC bus without series stacking
R_DS(on) max	0.81 Ω at V_GS = 10 V, I_D = 3.5 A - enables <1.5 W conduction loss at 7 A
Q_g	12 nC - reduces gate drive power and allows use of low-current drivers (e.g., 1–2 A peak)
E_AS	230 mJ - sustains repeated unclamped inductive energy without failure in PFC boost chokes
dv/dt ruggedness	50 V/ns - prevents false turn-on during high-slew transient events in bridge-leg configurations
T_j range	−55 to +150 °C - qualified for industrial and outdoor power supply operation
R_thJC	1.38 °C/W - enables 90 W dissipation with modest heatsinking (e.g., 15 °C rise at 65 W)

Pinout & Package

STD7N90K5 is housed in a DPAK (TO-252) package with exposed drain tab for thermal and electrical connection. The case is electrically connected to the drain terminal, requiring isolation from heatsink unless referenced to drain potential.

Pin/Terminal	Circuit Role	Design Meaning
Tab (D)	Drain	Primary high-side power path; thermally coupled to PCB copper pour or heatsink
Pin 1 (G)	Gate	Control input; requires ≤±30 V drive; Zener-clamped internally
Pin 3 (S)	Source	Reference node for gate drive and current sensing; tied to low-side return path

Key Features

Feature	Design Value
Industry's lowest R_DS(on) × area	Enables compact 7 A/900 V switch design in DPAK-no need for larger TO-220 or TO-247
Ultra-low gate charge (12 nC)	Reduces driver IC stress and switching losses; supports >100 kHz operation with minimal gate loss
100% avalanche tested	Guarantees robustness in real-world overvoltage transients without derating
Zener-protected gate	Eliminates external gate protection components, simplifying layout and improving reliability
MDmesh K5 vertical architecture	Delivers superior FoM (R_DS(on) × Q_g) vs. competing 900 V MOSFETs-key for high-density PFC

Applications

Industrial AC-DC Power Supplies

Server & Telecom Rectifiers

Use Scenario: Primary switch in 1–3 kW active clamp forward or LLC resonant converter operating from 380–400 V DC bus.

IC Role / Device Role / Timing Role: High-voltage main power switch handling full load current with minimal conduction and switching loss.

Use Value: 0.81 Ω R_DS(on) and 12 nC Q_g reduce total losses by ≥12% versus legacy 900 V MOSFETs, improving efficiency from 94.2% to 95.1% at full load.

Use Scenario: Boost PFC stage in 2 kW telecom rectifier with universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: Critical switching element in continuous conduction mode (CCM) boost circuit, stressed by high di/dt and voltage overshoot.

Use Value: 50 V/ns dv/dt ruggedness and 230 mJ E_AS prevent failure during line surges and inductor saturation events.

EV Charging Station Modules

High-Voltage Industrial Motor Drives

Use Scenario: DC-link switching in 7–11 kW AC/DC OBC modules interfacing 400–800 V battery packs.

IC Role / Device Role / Timing Role: Bidirectional switch in isolated DC-DC stage or auxiliary HV supply regulation.

Use Value: −55 to +150 °C T_j rating and 1.38 °C/W R_thJC support sustained 7 A operation in sealed, convection-cooled enclosures.

Use Scenario: Brake chopper or pre-charge control in 400–690 V three-phase drives for pumps and compressors.

IC Role / Device Role / Timing Role: Fast-acting energy-dump switch triggered during overvoltage fault conditions.

Use Value: 28 A pulsed I_DM and 2.4 A avalanche current capability ensure safe absorption of regenerative energy spikes up to 230 mJ.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP7N90K5	TO-220 package; identical die but higher R_thJA (62 °C/W vs. 50 °C/W) and no tape-and-reel option	Better suited for prototyping or low-volume heatsink-mounted designs where manual assembly is acceptable	Select when board space permits TO-220 footprint and volume procurement is not required
IPP70R950P7XKSA1	700 V rating, 0.95 Ω R_DS(on), 13.5 nC Q_g; CoolMOS™ P7, no internal Zener	Limited to ≤600 V DC bus; requires external gate protection and tighter layout control	Choose only if system voltage is capped at 600 V and lower cost per watt is prioritized over ruggedness

Compared with STP7N90K5, STD7N90K5 offers superior board-level thermal performance and automated assembly compatibility; versus IPP70R950P7XKSA1, it provides higher voltage margin, built-in gate protection, and proven avalanche endurance-critical for industrial reliability.

Availability

STD7N90K5 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, server & telecom rectifiers, and EV charging station modules requiring stable component supply across multi-year production cycles.

Supply support for STD7N90K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, with manufacturing, R&D, and sales operations across Europe, Asia, and the Americas.

This device belongs to ST's MDmesh™ K5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-power-density offline power conversion in industrial, computing, and renewable energy systems.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

A gate resistor of 4.7 Ω is validated in the datasheet test circuit for resistive load switching. For hard-switched PFC or LLC, values between 2.2 Ω and 6.8 Ω balance EMI suppression and switching speed. Exceeding 10 Ω increases turn-off time and may compromise dv/dt immunity under high-current transients.

Can STD7N90K5 replace older STD7N80K5 in existing designs?

Yes-STD7N90K5 is a direct upgrade: same DPAK package, pinout, and gate drive requirements, but with 900 V rating (vs. 800 V), 0.81 Ω R_DS(on) (vs. 0.95 Ω), and improved E_AS. No layout changes are needed, and system margin improves for 400 V AC input surges and 700+ V DC bus transients.

Is the source-drain diode suitable for synchronous rectification?

No-the body diode has 352 ns trr and 3.63 µC Q_rr at 25 °C, making it unsuitable for high-frequency synchronous rectification. It is designed for freewheeling and clamping only. External Schottky or SiC diodes are required for >100 kHz SR applications.

Does the "Zener-protected" gate require external TVS clamping?

No-internal Zener clamps gate-to-source to ±20 V typical, validated across temperature and process variation. External clamping is unnecessary unless system-level ESD exceeds IEC 61000-4-2 Level 4 (15 kV air/8 kV contact), in which case a low-capacitance TVS on the gate trace is advised.

STD7N90K5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ K5

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 900 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD7N90K5 FAQ

1.How can I place an order for STD7N90K5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD7N90K5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD7N90K5 reliable?

The price and inventory of STD7N90K5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD7N90K5 is usually 5 days.

3.What payment methods are accepted for STD7N90K5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD7N90K5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD7N90K5?

STD7N90K5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD7N90K5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD7N90K5?

For technical support, including STD7N90K5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD7N90K5 requirements.

6.How does Aetrix verify that STD7N90K5 is sourced from the original manufacturer or authorized distributors?

All STD7N90K5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD7N90K5 meets industry standards.

7.What is the process for return or replacement of STD7N90K5?

All STD7N90K5 units undergo pre-shipment inspection (PSI). If there is an issue with STD7N90K5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD7N90K5 part is unused and in its original packaging.

Return procedure for STD7N90K5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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