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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD7NM60N

Name: STD7NM60N
Brand: STMicroelectronics
SKU: STD7NM60N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD7NM60N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD7NM60N.pdf

Description:: MOSFET N-CH 600V 5A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STD7NM60N from STMicroelectronics is an N-channel 600 V, 5 A Power MOSFET in IPAK (TO-251) package, featuring 800 mΩ typical R_DS(on), 14 nC total gate charge, and 100% avalanche-tested ruggedness. It employs MDmesh™ II vertical strip architecture for high-efficiency SMPS, PFC, and industrial switching converters operating up to 150 °C junction temperature.

For engineers reviewing the STD7NM60N datasheet, STD7NM60N pinout, STD7NM60N application, or STD7NM60N equivalent, key selection criteria include its 600 V V_DS, low 363 pF C_iss, 2.78 °C/W R_thJC, 213 ns diode t_rr, and suitability for hard-switched flyback and resonant LLC topologies requiring robust unclamped inductive switching capability.

Technical Context

This device implements ST's second-generation MDmesh technology-combining a high-voltage vertical drift region with optimized strip layout-to simultaneously minimize R_DS(on) and gate charge. Its 1.1 pF Crss and 14 nC Q_g enable fast, low-loss switching at high frequencies while maintaining stable 600 V breakdown voltage across temperature.

The integrated body diode delivers 5 A continuous source-drain current with 1.3 V forward drop and 1.5 µC Q_rr at 25 °C, supporting synchronous rectification and freewheeling roles in offline converters. Avalanche ruggedness is validated to 2 A repetitive I_AR and 119 mJ E_AS under defined test conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports universal AC input (85–265 VAC) offline converters without derating
R_DS(on) max	900 mΩ at V_GS = 10 V, I_D = 2.5 A - enables <1.5 W conduction loss at 5 A in TO-251 thermal envelope
Q_g	14 nC - reduces gate drive power and allows use of low-current drivers in high-frequency designs
C_iss	363 pF - minimizes Miller effect and improves noise immunity in high-dv/dt environments
t_rr	213 ns at T_J = 25 °C - limits switching losses during diode commutation in bridge-leg configurations
R_thJC	2.78 °C/W - permits 45 W dissipation at 25 °C case temperature, critical for compact heatsink designs
E_AS	119 mJ - ensures reliable operation under unclamped inductive load transients in motor drives

Pinout & Package

STD7NM60N is housed in an IPAK (TO-251) type C package with exposed drain tab for thermal and electrical connection. The 3-pin configuration features gull-wing leads compatible with through-hole and surface-mount assembly.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Pin 2)	Drain (D)	Electrically and thermally connected to internal die drain; requires insulated mounting or direct heatsink contact
Pin 1	Gate (G)	High-impedance control terminal; 5.4 Ω intrinsic gate resistance limits ringing and simplifies snubber design
Pin 3	Source (S)	Reference node for gate drive and current sensing; ties to PCB ground plane for low-inductance return path

Key Features

Feature	Design Value
100% avalanche tested	Validated to 2 A repetitive I_AR and 119 mJ single-pulse E_AS - eliminates need for external clamping in inductive switching
Low gate charge (Q_g = 14 nC)	Reduces driver power consumption by >40% vs. comparable 600 V MOSFETs - extends battery life in auxiliary supplies
Low input capacitance (C_iss = 363 pF)	Enables clean turn-on/turn-off waveforms at >300 kHz without excessive gate resistor damping
MDmesh™ II architecture	Delivers 800 mΩ R_DS(on) in IPAK - achieves same on-resistance as larger DPAK devices in 30% smaller footprint
150 °C max junction temperature	Supports operation in sealed enclosures or high-ambient industrial environments without forced air cooling

Applications

Server PSU Primary Switch

Industrial PLC Output Stage

Use Scenario: High-density 1 kW server power supply using active clamp flyback topology with 100 kHz switching frequency.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 600 V DC bus and delivering 5 A peak current per pulse.

Use Value: 900 mΩ R_DS(on) and 14 nC Q_g reduce conduction + switching losses to <2.1 W, enabling >92% efficiency at full load.

Use Scenario: Solid-state relay output stage in programmable logic controller driving 24 VDC solenoid loads with frequent on/off cycling.

IC Role / Device Role / Timing Role: Low-inductance, avalanche-rugged switch interfacing microcontroller GPIO to inductive load.

Use Value: 119 mJ E_AS withstands repeated inductive kickback without snubber, extending relay lifetime beyond 1 million cycles.

LED Streetlight Driver

Appliance Motor Inverter

Use Scenario: Isolated constant-current LED driver for outdoor street lighting operating in -40 to +85 °C ambient.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier MOSFET in LLC resonant converter, conducting 5 A continuously.

Use Value: 1.3 V V_SD and 213 ns t_rr minimize conduction loss and reverse recovery loss, improving thermal margin at high ambient.

Use Scenario: Half-bridge leg in 200 W variable-speed washing machine motor inverter with 12 V gate drive.

IC Role / Device Role / Timing Role: Low-side switching element controlling PWM phase current with fast 12 ns fall time.

Use Value: 5.4 Ω R_G and 7.7 nC Q_gd ensure crisp 26 ns turn-off delay, reducing shoot-through risk in high-side/lower-side overlap.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 600 V Power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP7NM60N	Same die, DPAK package (R_thJA = 62 °C/W vs. 100 °C/W); higher R_DS(on) (1.1 Ω typ.)	Better thermal performance in board-level convection cooling; unsuitable for IPAK-restricted layouts	Select when PCB space allows DPAK and case temperature must stay below 80 °C
FQP7N60C	600 V, 7 A, 1.2 Ω R_DS(on), 22 nC Q_g; no avalanche rating published	Higher current rating but slower switching and unverified avalanche ruggedness	Select only for non-critical, low-frequency (<50 kHz), non-avalanche-exposed applications

Compared with STP7NM60N and FQP7N60C, STD7NM60N offers superior thermal resistance in compact IPAK, lower gate charge for high-frequency operation, and guaranteed avalanche capability-making it optimal for space-constrained, high-reliability industrial SMPS where transient robustness is mandatory.

Availability

STD7NM60N is available at Aetrix Electronics and suitable for server power supplies, industrial PLC outputs, LED streetlight drivers, and appliance motor inverters requiring stable component supply and long-term manufacturing continuity.

Supply support for STD7NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STD7NM60N belongs to ST's MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching power supplies where low R_DS(on), low Q_g, and avalanche reliability are critical system requirements.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STD7NM60N supports 3 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS6523 Rev 6. This derating reflects thermal limitations of the IPAK package and ensures safe operation within SOA boundaries at elevated temperatures without exceeding 150 °C junction temperature.

Does STD7NM60N have a built-in body diode, and what are its key parameters?

Yes, STD7NM60N integrates a fast-recovery body diode rated for 5 A continuous source-drain current. Key parameters include 1.3 V forward voltage at 5 A, 213 ns reverse recovery time at 25 °C, and 1.5 µC reverse recovery charge-enabling efficient freewheeling in buck, flyback, and half-bridge topologies without external diodes.

Can STD7NM60N be used in zero-voltage switching (ZVS) circuits?

Yes-its low 1.1 pF Crss and 363 pF Ciss support ZVS operation in resonant LLC and phase-shifted full-bridge converters. The 14 nC Q_g ensures minimal dead-time requirement, while the 15 V/ns dv/dt rating guarantees reliable turn-off during high-slew-rate transitions without spurious triggering.

Is the IPAK package lead-free and RoHS-compliant?

Yes, STD7NM60N is supplied in an ECOPACK®-compliant IPAK (TO-251) type C package meeting RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. ST confirms lead-free terminations and halogen-free molding compound per DS6523 Rev 6 section 4 and www.st.com/ecopack.

STD7NM60N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 900mOhm @ 2.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 363 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 45W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD7NM60N FAQ

1.How can I place an order for STD7NM60N through Aetrix?

Please submit a Request for Quotation (RFQ) for STD7NM60N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD7NM60N reliable?

The price and inventory of STD7NM60N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD7NM60N is usually 5 days.

3.What payment methods are accepted for STD7NM60N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD7NM60N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD7NM60N?

STD7NM60N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD7NM60N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD7NM60N?

For technical support, including STD7NM60N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD7NM60N requirements.

6.How does Aetrix verify that STD7NM60N is sourced from the original manufacturer or authorized distributors?

All STD7NM60N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD7NM60N meets industry standards.

7.What is the process for return or replacement of STD7NM60N?

All STD7NM60N units undergo pre-shipment inspection (PSI). If there is an issue with STD7NM60N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD7NM60N part is unused and in its original packaging.

Return procedure for STD7NM60N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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