STMicroelectronics STD7NM80

Overview

STD7NM80 from STMicroelectronics is an N-channel 800 V, 6.5 A Power MOSFET in DPAK (TO-252) package, featuring 0.95 Ω typical R_DS(on), 18 nC total gate charge, and 100% avalanche tested performance. It delivers high dv/dt immunity and low input capacitance for robust high-voltage switching in offline SMPS and industrial motor drives.

For engineers reviewing the STD7NM80 datasheet, STD7NM80 pinout, STD7NM80 application, or STD7NM80 equivalent, key selection criteria include its 800 V V_DS, 1.4 °C/W R_thJC, 240 mJ single-pulse avalanche energy, and DPAK thermal performance on FR-4 PCBs.

Technical Context

This MDmesh™-based MOSFET uses ST's proprietary strip layout and multiple drain process to achieve ultra-low on-resistance while maintaining high voltage capability. Its 620 pF C_iss, 15 pF Crss, and 7 Ω gate input resistance enable fast, controllable switching with reduced EMI risk in hard-switched topologies.

The device integrates a robust intrinsic body diode with 1.3 V forward voltage at 6.5 A and 460–680 ns reverse recovery time-critical for snubberless flyback and resonant converters where diode recovery behavior directly impacts efficiency and stress.

Key Specifications

Pinout & Package

DPAK (TO-252) package with exposed drain tab for thermal and electrical connection; standard 3-lead surface-mount outline conforming to JEDEC MO-247.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP7NM80 and IPP60R190C7, STD7NM80 uniquely balances 800 V capability, DPAK thermal performance, and avalanche ruggedness-making it optimal for space-constrained, high-reliability offline converters where voltage margin and board-level robustness are non-negotiable.

Availability

STD7NM80 is available at Aetrix Electronics and suitable for offline SMPS, industrial motor drives, AC-DC PFC stages, and solenoid/relay drivers requiring stable component supply across long-lifecycle industrial programs.

Supply support for STD7NM80 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

STD7NM80 belongs to ST's MDmesh™ high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in industrial power conversion systems operating up to 800 V DC.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The STD7NM80 supports 4 A continuous drain current at T_C = 100°C, as specified in Table 1 of DS4854 Rev 5. This derating reflects thermal limitations of the DPAK package under sustained high-power operation and must be validated with actual PCB copper area and ambient conditions.

Does STD7NM80 have a built-in gate protection diode?

No, STD7NM80 does not integrate a gate protection Zener diode. Its absolute maximum V_GS rating is ±30 V, and external gate protection (e.g., 18 V Zener clamp) is required in noisy environments or when using high-side gate drivers with potential overshoot.

Can STD7NM80 replace STF7NM80 in existing designs?

Yes-STD7NM80 and STF7NM80 share identical electrical specs and DPAK packaging, differing only in lead-frame plating (STD = standard, STF = full-mold). No layout or thermal changes are needed, though STF7NM80 offers enhanced moisture resistance per J-STD-020.

What is the recommended PCB footprint for thermal performance?

Per Figure 20 in DS4854 Rev 5, use a minimum 1-inch² (645 mm²) 2 oz copper pour connected to the exposed drain tab, with ≥6 thermal vias (0.3 mm diameter, 0.8 mm pitch) to inner ground planes. This achieves the specified 1.4 °C/W R_thJC and prevents thermal runaway at full 6.5 A load.