My Inquiry
My Account
STMicroelectronics STD7NM80-1
- Part No.:
- STD7NM80-1
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Datasheet:
-
STD7NM80-1.pdf
- Description:
- MOSFET N-CH 800V 6.5A IPAK
- Quantity:
- Payment:
- Shipping:
Inventory:100
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
STD7NM80-1 from STMicroelectronics is an N-channel 800 V, 0.95 Ω typ. (1.05 Ω max.), 6.5 A MDmesh™ Power MOSFET in DPAK (TO-252) package, designed for high-voltage switching in offline SMPS, PFC stages, and industrial motor drives where avalanche ruggedness and low gate charge are critical.
For engineers reviewing the STD7NM80-1 datasheet, STD7NM80-1 pinout, STD7NM80-1 application, or STD7NM80-1 equivalent, key selection factors include its 100% avalanche-tested rating, 18 nC total gate charge, 620 pF input capacitance, 1.4 °C/W junction-to-case thermal resistance, and compatibility with standard DPAK PCB footprints.
Technical Context
This device leverages ST's MDmesh™ multi-drain process combined with PowerMESH™ horizontal layout to achieve ultra-low RDS(on) while maintaining high dv/dt immunity (≥50 V/ns) and robust unclamped inductive switching capability. Its strip-based cell structure enables superior dynamic performance versus conventional planar MOSFETs at 800 V.
The integrated body diode exhibits 1.3 V forward voltage at 6.5 A and 460–680 ns reverse recovery time with 4–6 µC Qrr, supporting hard-switched and resonant topologies. Gate threshold voltage is tightly specified at 3–5 V, ensuring reliable turn-on with standard 10 V gate drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 800 V - supports primary-side switching in universal-input AC-DC converters up to 380 V DC bus |
| RDS(on) max | 1.05 Ω - limits conduction loss to ≤7 W at 6.5 A continuous drain current |
| Qg | 18 nC - enables fast switching with moderate gate drive power (e.g., <100 mW at 100 kHz) |
| EAS | 240 mJ - withstands single-pulse inductive energy without failure under SOA-limited conditions |
| RthJC | 1.4 °C/W - allows ≥64 W power dissipation with 90 °C case temperature rise above ambient |
| Ciss | 620 pF - reduces Miller effect and improves noise immunity in high-dv/dt environments |
| ID (TC=100°C) | 4 A - defines practical continuous current limit in thermally constrained PCB layouts |
Pinout & Package
DPAK (TO-252) package: surface-mount, 3-terminal, exposed drain tab for thermal and electrical connection; standardized footprint per Figure 20 (DS4854 Rev 5, p.12); ECOPACK® compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Tab (Pin 2) | Drain (D) | Primary high-voltage power path; electrically and thermally connected to PCB copper pour |
| Pin 1 | Gate (G) | Control terminal; requires ≤±30 V bias; 7 Ω gate input resistance minimizes oscillation risk |
| Pin 3 | Source (S) | Reference node for gate drive; carries full load current and body diode return path |
Key Features
| Feature | Design Value |
|---|---|
| 100% avalanche tested | Guarantees single-pulse EAS = 240 mJ at TJ = 25 °C, eliminating need for external snubbers in flyback/PFC designs |
| Low Ciss & Qg | 620 pF / 18 nC enables >100 kHz operation with minimal driver loss and reduced EMI filtering burden |
| MDmesh™ technology | Delivers 20% lower RDS(on) × area vs. prior-generation 800 V MOSFETs, improving power density in compact adapters |
| Low gate input resistance | 7 Ω intrinsic Rg damps parasitic oscillations without external gate resistor, simplifying layout |
Applications
| AC-DC Adapter Primary Switch | Industrial PFC Boost Stage |
|---|---|
Use Scenario: 65 W universal-input offline flyback converter operating at 65 kHz with 380 V DC bus. IC Role / Device Role / Timing Role: Main high-side switch handling full primary current and voltage stress during each switching cycle. Use Value: 1.05 Ω RDS(on) limits conduction loss to 4.5 W; 240 mJ EAS absorbs leakage inductance spikes without clamping. | Use Scenario: 1 kW two-stage industrial PFC using boost topology with 100 kHz switching. IC Role / Device Role / Timing Role: Fast-switching, high-voltage switch in continuous conduction mode (CCM) boost stage. Use Value: 18 nC Qg enables efficient gate driving; 620 pF Ciss ensures stable operation under 1 kV/µs dv/dt transients. |
| Motor Drive Inverter Leg | LED Driver High-Voltage Switch |
Use Scenario: 750 W three-phase inverter for HVAC compressor control with 120 °C ambient. IC Role / Device Role / Timing Role: Low-side switch in IGBT/MOSFET hybrid half-bridge, managing regenerative current via body diode. Use Value: 1.3 V VSD and 460 ns trr minimize body diode conduction loss and reduce shoot-through risk during commutation. | Use Scenario: 150 W constant-current LED driver for street lighting with 400 V DC bus. IC Role / Device Role / Timing Role: Primary switching element in buck-boost or SEPIC topology handling high-voltage transients. Use Value: 800 V VDS rating eliminates need for series stacking; 1.4 °C/W RthJC supports >70 W dissipation on 2 oz copper. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP7NM80 | Same die, TO-220 package; higher RthJA (65 °C/W vs. 50 °C/W), no exposed tab | Better suited for forced-air-cooled discrete heatsink mounting, not SMT | Select when mechanical mounting flexibility outweighs PCB space constraints and thermal performance needs |
| FDPF8N50UN | 500 V rating, 0.75 Ω RDS(on), 8 A ID; lower voltage ceiling, higher current | Not suitable for 800 V bus applications; limited to ≤375 V DC systems | Choose only if system DC bus is ≤375 V and higher continuous current is required |
Compared with STP7NM80 and FDPF8N50UN, STD7NM80-1 uniquely balances 800 V capability, DPAK thermal efficiency, and avalanche ruggedness-making it optimal for space-constrained, high-reliability offline power supplies where voltage margin and board-level thermal management are critical.
Availability
STD7NM80-1 is available at Aetrix Electronics and suitable for AC-DC adapters, industrial PFC modules, and LED driver power stages requiring stable component supply and long-term manufacturing continuity.
Supply support for STD7NM80-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.
STD7NM80-1 belongs to ST's MDmesh™ high-voltage Power MOSFET product line, engineered specifically for energy-efficient, high-reliability switching in offline power conversion systems operating up to 800 V.
FAQ
What is the maximum safe operating temperature for STD7NM80-1?
The junction temperature must not exceed 150 °C. With RthJC = 1.4 °C/W and PTOT = 90 W at TC = 25 °C, sustained operation requires case temperature ≤90 °C. Derating is mandatory above 25 °C ambient-e.g., max 4 A continuous current at TC = 100 °C per Table 1.
Does STD7NM80-1 require a gate resistor for stability?
Yes-though its intrinsic gate resistance is 7 Ω, a 10–22 Ω external series gate resistor is recommended to damp ringing caused by PCB trace inductance and driver output impedance, especially in hard-switched topologies above 50 kHz.
Can STD7NM80-1 replace STD8NM80 in existing designs?
No-STD8NM80 has 0.75 Ω RDS(on) max and 8 A ID, offering lower conduction loss but identical 800 V rating and DPAK package. Direct replacement requires verification of thermal margin, gate drive capability, and SOA compliance under peak transient conditions.
Is the body diode suitable for synchronous rectification?
No-the body diode has 1.3 V forward drop and 460–680 ns reverse recovery time with significant Qrr (4–6 µC), making it unsuitable for synchronous rectification. External Schottky or MOSFET-based synchronous rectifiers are required for high-efficiency secondary-side switching.
STD7NM80-1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™
- Package/Case:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 800 V
- Current - Continuous Drain (Id) @ 25°C:
- 6.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.05Ohm @ 3.25A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 18 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 620 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 90W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-251 (IPAK)
STD7NM80-1 FAQ
1.How can I place an order for STD7NM80-1 through Aetrix?
Please submit a Request for Quotation (RFQ) for STD7NM80-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STD7NM80-1 reliable?
The price and inventory of STD7NM80-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD7NM80-1 is usually 5 days.
3.What payment methods are accepted for STD7NM80-1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD7NM80-1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STD7NM80-1?
STD7NM80-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STD7NM80-1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STD7NM80-1?
For technical support, including STD7NM80-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD7NM80-1 requirements.
6.How does Aetrix verify that STD7NM80-1 is sourced from the original manufacturer or authorized distributors?
All STD7NM80-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD7NM80-1 meets industry standards.
7.What is the process for return or replacement of STD7NM80-1?
All STD7NM80-1 units undergo pre-shipment inspection (PSI). If there is an issue with STD7NM80-1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STD7NM80-1 part is unused and in its original packaging.
Return procedure for STD7NM80-1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
STD7NM80-1 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
