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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD7NS20T4

Name: STD7NS20T4
Brand: STMicroelectronics
SKU: STD7NS20T4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD7NS20T4

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD7NS20T4.pdf

Description:: MOSFET N-CH 200V 7A DPAK

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Product details

Overview

STD7NS20T4 from STMicroelectronics is an N-channel 200 V, 7 A, 0.35 Ω R_DS(on) DPAK (TO-252) power MOSFET with MESH OVERLAY™ technology, designed for high-speed switching in DC-DC converters and lighting ballasts. It features 100% avalanche tested ruggedness, 5 V/ns dv/dt capability, and low intrinsic capacitances (C_iss = 540 pF, C_oss = 90 pF).

For engineers reviewing the STD7NS20T4 datasheet, STD7NS20T4 pinout, STD7NS20T4 application, or STD7NS20T4 equivalent, key selection factors include its 200 V breakdown voltage, 7 A continuous drain current at T_C = 25°C, 2.7 °C/W junction-to-case thermal resistance, and tape-and-reel packaging (T4 suffix) for automated assembly.

Technical Context

This MOSFET employs ST's proprietary MESH OVERLAY™ process and STrip layout with edge termination to achieve high voltage robustness and fast switching. Its 150 °C max junction temperature, 60 mJ single-pulse avalanche energy (E_AS), and 170 ns reverse recovery time (t_rr) support reliable operation under inductive load transients.

The device integrates a built-in body diode with 1.5 V forward voltage (V_SD) at 7 A and 11 A peak reverse recovery current (I_RRM). Gate charge parameters-Q_g = 31–45 nC, Q_gd = 9 nC-enable efficient gate drive design for SMPS operating up to several hundred kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	200 V - Withstands 200 V drain-source blocking voltage before avalanche conduction.
R_DS(on)	0.35 Ω (typ) - Low on-resistance minimizes conduction loss at 3.5 A, enabling <1.2 W I²R loss at full rated current.
I_D (cont)	7 A at T_C = 25°C - Supports high-current switching in compact heatsinked layouts.
t_rr	170 ns - Fast body diode recovery reduces switching losses and EMI in hard-switched topologies.
Q_g	31–45 nC - Total gate charge determines required driver current and influences turn-on/turn-off timing control.
R_thj-case	2.7 °C/W - Enables direct mounting to PCB copper or heatsink for thermal management without forced air.
E_AS	60 mJ - Single-pulse avalanche energy rating ensures survivability during unclamped inductive switching events.

Pinout & Package

Package: TO-252 (DPAK), surface-mount, 3-pin, exposed drain pad for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Source terminal of N-channel MOSFET	Reference node for gate drive; connects to low-side return path and PCB ground plane.
2 (Gate)	Control electrode	Receives 10 V logic-level gate drive; requires <45 nC charge for full enhancement.
3 (Drain)	Main current-carrying terminal	Connected to high-voltage rail; electrically and thermally tied to large copper area via exposed pad.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees robustness against unclamped inductive switching stress without derating.
Extremely high dv/dt capability	5 V/ns rating prevents spurious turn-on during fast voltage transients in high-noise environments.
Low intrinsic capacitances	C_iss = 540 pF, C_oss = 90 pF - Reduces capacitive switching losses and improves efficiency at high frequencies.
MESH OVERLAY™ process	Enables optimized cell density and edge termination for superior R_DS(on)/V_DSS trade-off vs. conventional planar MOSFETs.

Applications

LED Driver Ballasts

Telecom DC-DC Converters

Use Scenario: High-efficiency buck-based LED drivers for street lighting and industrial luminaires requiring >100 kHz switching.

IC Role / Device Role / Timing Role: Main power switch controlling current through high-brightness LED strings.

Use Value: 0.35 Ω R_DS(on) and 170 ns t_rr reduce conduction and recovery losses, improving system efficiency by ~2.1% at 5 A output.

Use Scenario: Isolated forward or active-clamp forward converters in 48 V telecom power supplies.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier or main switch handling 7 A pulsed loads.

Use Value: 200 V V_DSS and 60 mJ E_AS ensure safe operation during line surges and transformer leakage spikes.

Industrial SMPS

Lighting Equipment Inverters

Use Scenario: 300–500 W AC-DC front-end PFC stages and secondary-side DC-DC regulation in factory automation systems.

IC Role / Device Role / Timing Role: High-side or low-side switching element in continuous conduction mode (CCM) topologies.

Use Value: 2.7 °C/W R_thj-case allows direct PCB thermal coupling, eliminating need for additional thermal interface material in space-constrained enclosures.

Use Scenario: Resonant half-bridge inverters driving cold-cathode fluorescent lamps (CCFL) or electronic ballasts.

IC Role / Device Role / Timing Role: Fast-switching power transistor managing high-frequency AC output generation.

Use Value: 5 V/ns dv/dt immunity prevents false triggering during zero-crossing transitions, enhancing lamp ignition reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 200 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP7NK20Z	Higher R_DS(on) (0.42 Ω typ), Zener-protected gate, TO-220 package	Lacks tape-and-reel (T4) option; larger footprint and higher thermal resistance (R_thj-case = 3.5 °C/W)	Preferred where gate protection is critical and manual assembly or heatsink mounting is used.
IRF640NPBF	Same V_DSS (200 V), but higher R_DS(on) (0.18 Ω @ V_GS = 10 V is misstated-actual is 0.18 Ω only at 10 V and 25°C; real-world R_DS(on) rises to ~0.22 Ω at 100°C), TO-220	No avalanche rating specified; not 100% avalanche tested; unsuitable for unclamped inductive loads	Acceptable only in non-avalanche-critical, lower-temperature, lower-duty-cycle applications.

Compared with STP7NK20Z and IRF640NPBF, STD7NS20T4 delivers lower conduction loss, guaranteed avalanche ruggedness, and DPAK tape-and-reel compatibility-making it optimal for automated, high-reliability lighting and telecom power designs.

Availability

STD7NS20T4 is available at Aetrix Electronics and suitable for LED driver ballasts, telecom DC-DC converters, and industrial SMPS requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.

Supply support for STD7NS20T4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, power, MCU, and sensor solutions for industrial, automotive, and consumer markets.

STD7NS20T4 belongs to ST's high-voltage power MOSFET product line, engineered specifically for rugged, high-frequency switching in lighting, telecom, and industrial power conversion systems.

FAQ

What is the maximum gate-source voltage rating for STD7NS20T4?

The absolute maximum V_GS is ±20 V. Exceeding this risks permanent gate oxide damage. Recommended operating V_GS is 10 V for full enhancement, with typical threshold voltage (V_GS(th)) ranging from 2 V to 4 V at I_D = 250 µA. Gate drive circuits must include clamping or zener protection if transient overshoot is possible.

Does STD7NS20T4 have a built-in body diode, and what are its key characteristics?

Yes-it integrates a fast-recovery body diode with 1.5 V forward voltage at 7 A (V_SD), 170 ns reverse recovery time (t_rr), and 0.95 µC reverse recovery charge (Q_rr). These values are measured at T_j = 150°C, making it suitable for synchronous rectification and freewheeling in hard-switched topologies without external diodes.

Can STD7NS20T4 be used in avalanche mode, and what is its rated avalanche energy?

Yes-STD7NS20T4 is 100% avalanche tested. Its single-pulse avalanche energy (E_AS) is 60 mJ when starting from T_j = 25°C, with I_AR = 7 A and V_DD = 50 V. Repetitive avalanche is not rated; designers must ensure pulse duty cycle and thermal limits prevent junction overheating during repeated events.

What is the thermal resistance from junction to case, and how should it be applied in layout?

R_thj-case is 2.7 °C/W maximum. This value assumes full soldering of the exposed drain pad to ≥10 cm² of 2-oz copper on the PCB. Layout must use multiple thermal vias under the pad, connected to internal ground or power planes, to realize this rating. Without proper copper area and vias, effective thermal resistance may exceed 5 °C/W.

STD7NS20T4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MESH OVERLAY™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 400mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 540 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 45W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD7NS20T4 FAQ

1.How can I place an order for STD7NS20T4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD7NS20T4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD7NS20T4 reliable?

The price and inventory of STD7NS20T4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD7NS20T4 is usually 5 days.

3.What payment methods are accepted for STD7NS20T4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD7NS20T4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD7NS20T4?

STD7NS20T4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD7NS20T4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD7NS20T4?

For technical support, including STD7NS20T4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD7NS20T4 requirements.

6.How does Aetrix verify that STD7NS20T4 is sourced from the original manufacturer or authorized distributors?

All STD7NS20T4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD7NS20T4 meets industry standards.

7.What is the process for return or replacement of STD7NS20T4?

All STD7NS20T4 units undergo pre-shipment inspection (PSI). If there is an issue with STD7NS20T4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD7NS20T4 part is unused and in its original packaging.

Return procedure for STD7NS20T4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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