STMicroelectronics STD80N340K6

Overview

STD80N340K6 from STMicroelectronics is an N-channel 800 V, 285 mΩ typ. (340 mΩ max.), 12 A MDmesh K6 superjunction Power MOSFET in DPAK (TO-252) package, designed for high-voltage flyback converters in tablet/notebook adapters and LED lighting drivers where high power density and low conduction/switching losses are critical.

For engineers reviewing the STD80N340K6 datasheet, STD80N340K6 pinout, STD80N340K6 application, or STD80N340K6 equivalent, key selection criteria include its 17.8 nC total gate charge, 1.36 °C/W junction-to-case thermal resistance, 130 mJ single-pulse avalanche energy, and Zener-protected gate structure - all validated for rugged 800 V operation in continuous switching topologies.

Technical Context

This device implements ST's sixth-generation MDmesh K6 superjunction architecture, featuring optimized charge compensation pillars to achieve best-in-class R_DS(on) × area and figure-of-merit (FOM). Its 950 pF input capacitance and 18 pF energy-related output capacitance (Co_er) support fast, low-loss switching at high dv/dt (120 V/ns MOSFET ruggedness).

The integrated Zener-protected gate enables ±30 V gate-source voltage tolerance and eliminates external gate clamping in noisy environments. Its 305 ns reverse recovery time (T_rr) and 4.3 µC Q_rr at 12 A ensure reliable body diode commutation in discontinuous conduction mode (DCM) flyback designs.

Key Specifications

Pinout & Package

DPAK (TO-252) package with exposed drain tab for enhanced thermal performance and mechanical mounting. Standard 3-pin configuration: Gate (G), Drain (D), Source (S), with Drain connected to the large copper tab on the underside.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STD80N340K6, STP80NF55-08 offers far lower on-resistance but fails at 800 V stress, while IPP60R099C7 delivers better FOM below 600 V but cannot replace it in 800 V flyback designs without redesigning transformer turns ratio and surge protection.

Availability

STD80N340K6 is available at Aetrix Electronics and suitable for flyback converter designs, notebook/tablet AC adapters, and LED lighting drivers requiring stable component supply across multi-year production cycles.

Supply support for STD80N340K6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, with R&D and manufacturing operations across Europe, Asia, and the Americas.

This device belongs to ST's MDmesh K6 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-power-density offline SMPS in consumer and industrial power supplies.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STD80N340K6 supports 7.5 A continuous drain current when the case temperature is maintained at 100 °C, as defined by its safe operating area (SOA) limits and thermal resistance (R_thJC = 1.36 °C/W). This derating ensures junction temperature remains within 150 °C under sustained load, verified per Figure 1 SOA curve in DS14092 Rev 2.

Does this MOSFET include integrated gate protection?

Yes - the STD80N340K6 integrates a Zener diode between gate and source, rated for ±30 V, which clamps transient overvoltage and prevents gate oxide damage during ESD events or gate drive faults. This eliminates the need for external gate protection components in most adapter and lighting applications.

Can it be used in hard-switched PFC circuits?

No - while rated for 800 V, the STD80N340K6 is optimized for flyback and quasi-resonant topologies, not continuous conduction mode (CCM) PFC. Its 340 mΩ R_DS(on) and 17.8 nC Q_g result in excessive conduction and switching losses above 100 kHz in boost PFC stages; ST recommends the STL11N80K5 or similar for that application.

What is the recommended PCB footprint for thermal performance?

ST specifies a minimum 1 inch² (645 mm²) FR-4 board with 2 oz copper for R_thJA = 50 °C/W. For optimal thermal performance, the DPAK drain tab must connect to a large copper pour tied to internal ground planes via ≥6 thermal vias (0.3 mm diameter, 0.6 mm pitch), per Figure 24 footprint in DS14092 Rev 2.