STMicroelectronics STD80N4F6

Overview

STD80N4F6 from STMicroelectronics is an automotive-grade N-channel 40 V Power MOSFET in DPAK (TO-252) package, featuring 5.5 mΩ typ. R_DS(on), 80 A continuous drain current at T_C = 25 °C, and AEC-Q101 qualification. It serves as a high-current, low-loss switching element in 12 V automotive power rails, including motor control and DC-DC converter primary-side switches.

For engineers reviewing the STD80N4F6 datasheet, STD80N4F6 pinout, STD80N4F6 application, or STD80N4F6 equivalent, key selection criteria include its 2.14 °C/W junction-to-case thermal resistance, 36 nC total gate charge, 149 mJ single-pulse avalanche energy, and suitability for high-reliability 40 V battery-system switching where low conduction loss and rugged unclamped inductive switching are required.

Technical Context

This MOSFET employs ST's 6th-generation STripFET™ VI DeepGATE™ technology with an optimized gate structure to minimize R_DS(on) and gate charge simultaneously. Its design targets high-current automotive switching where thermal performance and avalanche robustness are critical.

The device operates with ±20 V gate-source voltage rating and delivers 1.3 V forward diode voltage at 40 A, enabling efficient synchronous rectification or freewheeling in half-bridge topologies. Safe operating area (SOA) is defined up to 10 ms at T_C = 25 °C with 100 A peak current capability.

Key Specifications

Pinout & Package

Package: DPAK (TO-252), surface-mount, 3-terminal configuration with exposed drain tab for thermal and electrical connection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V Power MOSFET applications.

Compared with IRF8720PbF, STD80N4F6 adds AEC-Q101 compliance and 0.5 mΩ lower R_DS(on); compared with STL80N4F6, it trades 0.44 °C/W higher thermal resistance for broader DPAK compatibility and legacy footprint reuse.

Availability

STD80N4F6 is available at Aetrix Electronics and suitable for automotive body control modules, engine cooling fan drivers, 12 V/48 V DC-DC converters, and start-stop system solenoid interfaces requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for STD80N4F6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

STD80N4F6 belongs to ST's STripFET™ VI DeepGATE™ Power MOSFET product line, engineered specifically for high-current, high-reliability 12 V automotive power switching with emphasis on low R_DS(on), rugged avalanche behavior, and AEC-Q101 compliance.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STD80N4F6 supports 56 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limitations of the DPAK package and ensures safe operation within the 175 °C maximum junction temperature limit under sustained high-temperature conditions.

Does this MOSFET include an integrated body diode, and what are its key parameters?

Yes, STD80N4F6 features a built-in source-drain diode rated for 80 A continuous and 320 A pulsed current. Its forward voltage is 1.3 V at 40 A and 25 °C, with reverse recovery time of 41.1 ns and charge of 43.6 nC - characteristics critical for freewheeling and synchronous rectification performance.

Can STD80N4F6 replace older STripFET™ IV or V devices in existing designs?

Yes, STD80N4F6 is a direct drop-in replacement for earlier STD80N4LH5 (STripFET™ V) and STD80N4LH6 (STripFET™ IV) in DPAK packages, offering identical pinout, improved R_DS(on) (5.5 mΩ vs. 6.2–6.8 mΩ), and enhanced avalanche energy (149 mJ vs. 120–135 mJ).

What is the recommended PCB layout practice for thermal management?

For optimal thermal performance, connect the exposed drain tab (Pin 3) to ≥250 mm² of 2 oz copper on the top layer, using ≥6 thermal vias (0.3 mm diameter) to inner ground/power planes. Maintain minimum 0.5 mm clearance from adjacent traces and avoid solder mask over the tab area to maximize heat transfer.