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STMicroelectronics STD80N6F6
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- Part No.:
- STD80N6F6
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
STD80N6F6.pdf
- Description:
- MOSFET N-CH 60V 80A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:6,854
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Product details
Overview
STD80N6F6 from STMicroelectronics is an automotive-grade N-channel 60 V, 4.4 mΩ typ. RDS(on), 80 A Power MOSFET in DPAK (TO-252) package, using STripFET™ F6 trench-gate technology. It delivers high avalanche ruggedness and low gate charge (147 nC), enabling efficient high-current switching in motor control and DC-DC converters.
For engineers reviewing the STD80N6F6 datasheet, STD80N6F6 pinout, STD80N6F6 application, or STD80N6F6 equivalent, key selection criteria include its AEC-Q101 qualification, 1.25 °C/W junction-to-case thermal resistance, 320 A pulsed drain current capability, and suitability for 48 V automotive power distribution systems.
Technical Context
This MOSFET employs a trench-gate STripFET™ F6 structure optimized for low conduction and switching losses. Its 4.4 mΩ typical RDS(on) at VGS = 10 V and 40 A, combined with 44 nC gate-source charge and 46 nC gate-drain charge, supports fast, low-loss switching in hard-switched topologies.
The device features a robust body diode with 1.3 V forward voltage at 80 A and 46 ns reverse recovery time under 100 A/µs di/dt - critical for synchronous rectification and inductive load handling in automotive subsystems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum drain-source blocking voltage for 48 V system-level overvoltage protection |
| RDS(on) typ. | 4.4 mΩ at VGS = 10 V, ID = 40 A - Enables <1.8 W conduction loss at 80 A continuous operation |
| ID cont. | 80 A at TC = 25 °C - Package-limited current rating suitable for high-power solenoid and pump drivers |
| Qg | 147 nC - Total gate charge determines drive strength requirement and switching energy loss |
| Rthj-case | 1.25 °C/W - Enables 96 W power dissipation at 120 °C case temperature with 150 °C max junction limit |
| tr/tf | 71 ns / 40 ns - Fast edge rates support >100 kHz PWM in buck converters and motor phase control |
| VSD | 1.3 V at ISD = 80 A - Low body diode forward drop reduces freewheeling loss in half-bridge configurations |
Pinout & Package
Package: DPAK (TO-252), surface-mount, single-ended heat sink tab. Tab is electrically connected to drain (D).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D (Tab) | Drain | Main high-side power terminal; thermally and electrically tied to PCB copper pour for heat dissipation |
| G | Gate | Control input requiring 10 V drive for full enhancement; sensitive to ESD (±20 V absolute max) |
| S | Source | Power return path and reference node for gate drive; connects to low-side switch or ground plane |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine control, transmission, and ADAS power stages |
| Very low RDS(on) | 4.4 mΩ typ. enables <2 W conduction loss at 70 A - reduces heatsink size and cost in 12–48 V systems |
| Low gate charge | 147 nC total charge minimizes driver IC power consumption and allows use of low-cost gate drivers |
| High avalanche ruggedness | Unclamped inductive switching rated per JEDEC JESD24-1 - supports reliable operation in relay/snubberless designs |
| Low Rthj-pcb | 50 °C/W on 1-in² 2 oz Cu FR-4 - enables effective natural-convection cooling without dedicated heatsink |
Applications
| Automotive Body Control Module (BCM) | 48 V Mild Hybrid DC-DC Converter |
|---|---|
Use Scenario: High-side power switching for headlight, HVAC blower, and seat-motor control. IC Role / Device Role / Timing Role: N-channel high-side switch with integrated freewheeling diode for bidirectional motor commutation. Use Value: 80 A continuous rating and 320 A pulsed capability handle inrush currents of automotive loads without derating. | Use Scenario: Synchronous rectifier in secondary-side of isolated 48 V–12 V bi-directional DC-DC converter. IC Role / Device Role / Timing Role: Low-RDS(on) power MOSFET operating in synchronous rectification mode with precise gate timing. Use Value: 1.3 V body diode forward voltage and 46 ns trr minimize reverse recovery loss and improve efficiency above 95%. |
| Electric Power Steering (EPS) Motor Driver | Industrial 24 V DC Power Distribution Unit |
Use Scenario: Half-bridge leg in three-phase inverter driving brushless EPS assist motor. IC Role / Device Role / Timing Role: Low-loss switching element with fast 71 ns rise time and 40 ns fall time for 20–40 kHz PWM. Use Value: 1.25 °C/W Rthj-case allows direct mounting to aluminum chassis, eliminating discrete heatsinks in space-constrained EPS modules. | Use Scenario: Solid-state replacement for electromechanical relays in programmable logic controller (PLC) output modules. IC Role / Device Role / Timing Role: High-reliability, high-cycle-count electronic switch for 24 V industrial loads up to 80 A. Use Value: AEC-Q101 qualification ensures long-term reliability under vibration, thermal cycling, and surge conditions per IEC 61000-4-5. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF8721PBF | RDS(on) = 5.2 mΩ (typ.), Qg = 16 nC lower, no AEC-Q101 qualification | Not approved for automotive safety-critical systems; limited to industrial/commercial use | Select when cost sensitivity outweighs automotive qualification requirements |
| STL80N6F6 | Same die, but in PowerFLAT 5x6 package; Rthj-pcb = 25 °C/W (vs. 50 °C/W), no exposed drain tab | Better PCB thermal performance but requires double-sided cooling; unsuitable where mechanical mounting to heatsink is needed | Select for ultra-thin, high-density PCB layouts where board-level thermal management dominates |
Compared with IRF8721PBF and STL80N6F6, STD80N6F6 uniquely balances AEC-Q101 compliance, DPAK mechanical robustness, and 1.25 °C/W junction-to-case thermal path - making it optimal for mechanically anchored, thermally demanding automotive power stages.
Availability
STD80N6F6 is available at Aetrix Electronics and suitable for automotive body control modules, 48 V mild hybrid converters, and electric power steering motor drivers requiring stable component supply across multi-year production cycles.
Supply support for STD80N6F6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.
STD80N6F6 belongs to the STripFET™ F6 Power MOSFET product line, engineered specifically for high-efficiency, high-reliability 12–48 V automotive power conversion and load switching applications.
FAQ
Is STD80N6F6 suitable for high-frequency switching above 200 kHz?
No - while its 71 ns rise time supports operation up to ~100 kHz in hard-switched topologies, its 8325 pF input capacitance and 147 nC gate charge increase driver losses significantly above that frequency. For >200 kHz applications, consider ST's MDmesh™ series or silicon carbide alternatives with lower Ciss and Qg.
Can STD80N6F6 be used in a high-side configuration with standard gate drivers?
Yes, but only with a bootstrap or isolated gate driver - its source is not referenced to ground in high-side use. The 10 V gate threshold and ±20 V VGS rating require level-shifted drive; direct connection to microcontroller GPIO is unsafe and non-functional.
What is the maximum PCB copper area required for thermal performance at 80 A continuous?
Per datasheet Figure 20, the recommended footprint uses a 1-inch² (645 mm²) 2 oz copper pad connected to the drain tab. With this layout and still-air conditions, junction temperature stays within 150 °C at 80 A, assuming ambient ≤ 70 °C and no additional heatsink.
Does STD80N6F6 have integrated ESD protection on the gate?
No - the gate oxide is unprotected against human-body-model (HBM) ESD. Gate-source leakage is specified at ±100 nA at ±20 V, confirming absence of integrated clamping. External TVS diodes or RC snubbers are required during PCB handling and assembly to prevent gate rupture.
STD80N6F6 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- DeepGATE™, STripFET™ VI
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 6.5mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 122 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 7480 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 120W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
STD80N6F6 FAQ
1.How can I place an order for STD80N6F6 through Aetrix?
Please submit a Request for Quotation (RFQ) for STD80N6F6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STD80N6F6 reliable?
The price and inventory of STD80N6F6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD80N6F6 is usually 5 days.
3.What payment methods are accepted for STD80N6F6?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD80N6F6 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STD80N6F6?
STD80N6F6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STD80N6F6 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STD80N6F6?
For technical support, including STD80N6F6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD80N6F6 requirements.
6.How does Aetrix verify that STD80N6F6 is sourced from the original manufacturer or authorized distributors?
All STD80N6F6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD80N6F6 meets industry standards.
7.What is the process for return or replacement of STD80N6F6?
All STD80N6F6 units undergo pre-shipment inspection (PSI). If there is an issue with STD80N6F6, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STD80N6F6 part is unused and in its original packaging.
Return procedure for STD80N6F6:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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