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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD80N6F7

Name: STD80N6F7
Brand: STMicroelectronics
SKU: STD80N6F7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD80N6F7

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD80N6F7.pdf

Description:: MOSFET N-CH 60V 40A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STD80N6F7 from STMicroelectronics is an N-channel 60 V, 40 A Power MOSFET in DPAK (TO-252) package, featuring 6.8 mΩ typ. R_DS(on) at V_GS = 10 V, 25 °C, low Crss/Ciss ratio (50/1600 pF), and 60 mJ single-pulse avalanche energy - deployed in high-efficiency DC-DC converters and motor drive half-bridges.

For engineers reviewing the STD80N6F7 datasheet, STD80N6F7 pinout, STD80N6F7 application, or STD80N6F7 equivalent, key selection criteria include R_DS(on) vs. temperature stability, gate charge (25 nC total), diode recovery performance (39.6 ns trr), and thermal resistance (1.5 °C/W junction-to-case).

Technical Context

This device uses STripFET™ F7 trench-gate technology to achieve ultra-low on-resistance while reducing internal capacitance (Ciss = 1600 pF, Crss = 50 pF) and gate charge (Qg = 25 nC), enabling fast switching with reduced EMI sensitivity. Its low Crss/Ciss ratio (3.1%) enhances noise immunity during hard-switching.

The integrated body diode delivers 1.2 V forward voltage at 40 A and exhibits controlled reverse recovery (Qrr = 36 nC, IRRM = 1.8 A), supporting synchronous rectification and inductive load commutation without external freewheeling diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - supports 48 V nominal bus systems with 20% margin for transients.
R_DS(on) max	8.0 mΩ at V_GS = 10 V, T_C = 25 °C - enables <1.3 W conduction loss at 40 A.
Q_g	25 nC - allows efficient gate driving with standard 1-A peak drivers at >100 kHz.
E_AS	60 mJ - withstands unclamped inductive switching events up to 20 A, 40 V.
t_r/t_f	17.6 ns / 7.8 ns - supports <500 kHz hard-switching with minimal overlap loss.
R_thj-case	1.5 °C/W - enables 66 W continuous power dissipation at T_C = 100 °C.
V_SD	1.2 V at I_SD = 40 A - reduces freewheeling loss versus discrete Schottky solutions.

Pinout & Package

DPAK (TO-252) package with exposed drain tab (pin 2) for enhanced thermal conduction; thermally optimized for PCB mounting on 1 in², 2 oz Cu FR-4.

Pin/Terminal	Circuit Role	Design Meaning
D (Tab)	Drain	Exposed metal tab - primary thermal path to PCB; electrically connected to drain node.
G	Gate	Control terminal - requires 2–4 V threshold; driven with 10 V for full enhancement.
S	Source	Reference node for gate drive and current sensing; tied to power ground in low-side configurations.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	6.8 mΩ typ. at 10 V - cuts conduction loss by >30% vs. prior-generation 60 V MOSFETs.
Low Crss/Ciss ratio	3.1% (50/1600 pF) - suppresses Miller-induced shoot-through in bridge topologies.
High avalanche ruggedness	60 mJ single-pulse - eliminates need for external snubbers in flyback and buck-boost designs.
Fast body diode	39.6 ns trr, 36 nC Qrr - enables synchronous rectification without cross-conduction risk.
Enhanced thermal performance	R_thj-case = 1.5 °C/W - sustains 40 A continuous current with <75 °C case rise at 100 W.

Applications

DC-DC Converters

Motor Drive Half-Bridge

Use Scenario: 48 V input, 12 V output synchronous buck converter operating at 250 kHz.

IC Role / Device Role / Timing Role: Low-side power switch handling continuous 40 A output current with forced-air cooling.

Use Value: 6.8 mΩ R_DS(on) limits conduction loss to 10.9 W, enabling >96% efficiency at full load.

Use Scenario: 24 V brushed DC motor driver with PWM control and regenerative braking.

IC Role / Device Role / Timing Role: High-current low-side switch in H-bridge, commutating 35 A peak motor current.

Use Value: 60 mJ avalanche rating absorbs inductive kickback during rapid PWM turn-off without clamping diodes.

Industrial Power Supplies

LED Constant-Current Drivers

Use Scenario: 36 V industrial SMPS with active PFC front-end and LLC resonant output stage.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier in LLC secondary, conducting 30 A RMS.

Use Value: 1.2 V V_SD and 39.6 ns trr minimize conduction and recovery losses, improving thermal margin by 12 °C.

Use Scenario: 48 V constant-current LED string driver for street lighting (10 A, 36 V drop).

IC Role / Device Role / Timing Role: PWM-controlled current sink switch modulating 10 A LED current at 1–5 kHz.

Use Value: 25 nC Qg ensures clean 100 ns turn-on/off edges, eliminating LED flicker and EMI above 150 kHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFZ44NPBF	R_DS(on) = 28 mΩ (higher), Qg = 67 nC (2.7×), no avalanche rating specified.	Limited to lower-frequency (<100 kHz), lower-current (<20 A) linear-regulated supplies.	Select only when cost is primary constraint and thermal headroom exceeds 40 °C.
STP80NF55-08	R_DS(on) = 8.0 mΩ same, but TO-220 package (R_thj-case = 1.0 °C/W), higher Ciss (2200 pF).	Better thermal dissipation but larger footprint; unsuitable for space-constrained DPAK layouts.	Choose when board-level airflow is limited and case temperature must stay below 85 °C.

Compared with IRFZ44NPBF and STP80NF55-08, STD80N6F7 uniquely balances ultra-low R_DS(on), low gate charge, and robust avalanche capability in a surface-mount DPAK - making it optimal for compact, high-frequency, high-reliability 48 V power stages.

Availability

STD80N6F7 is available at Aetrix Electronics and suitable for DC-DC converters, motor drive half-bridges, and industrial power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STD80N6F7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STD80N6F7 belongs to the STripFET™ F7 power MOSFET product line, engineered specifically for high-efficiency, high-density 48 V power conversion systems demanding low conduction loss, fast switching, and field-proven ruggedness.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STD80N6F7 supports 40 A continuous drain current at T_C = 100 °C, as confirmed in Table 1 of DS11885 Rev 5. This rating is package-limited and remains unchanged from the 25 °C rating due to its thermally robust DPAK construction and 1.5 °C/W junction-to-case resistance.

Does STD80N6F7 have a specified avalanche energy rating?

Yes - STD80N6F7 is rated for 60 mJ single-pulse avalanche energy (E_AS) under conditions of T_j = 25 °C, I_AS = 20 A, and V_DD = 40 V, per Table 1 in the official datasheet. This rating is validated through unclamped inductive switching tests and supports reliable operation in flyback and boost converters.

Can STD80N6F7 be used in synchronous rectification applications?

Yes - its body diode exhibits 39.6 ns reverse recovery time (t_rr) and 36 nC reverse recovery charge (Q_rr) at I_D = 40 A, di/dt = 100 A/μs, and V_DD = 48 V (Table 6). These values enable clean commutation in LLC and forward converters without external Schottky diodes.

What is the gate threshold voltage range and how does it vary with temperature?

V_GS(th) is specified from 2 V to 4 V at 25 °C (Table 3), and Figure 8 shows normalized V_GS(th) decreases to ~0.7× at 175 °C. This negative temperature coefficient ensures inherent current sharing stability in paralleled configurations and predictable turn-on behavior across the full -55 to 175 °C junction range.

STD80N6F7 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ F7

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1600 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 100W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252 (DPAK)

STD80N6F7 FAQ

1.How can I place an order for STD80N6F7 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD80N6F7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD80N6F7 reliable?

The price and inventory of STD80N6F7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD80N6F7 is usually 5 days.

3.What payment methods are accepted for STD80N6F7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD80N6F7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD80N6F7?

STD80N6F7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD80N6F7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD80N6F7?

For technical support, including STD80N6F7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD80N6F7 requirements.

6.How does Aetrix verify that STD80N6F7 is sourced from the original manufacturer or authorized distributors?

All STD80N6F7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD80N6F7 meets industry standards.

7.What is the process for return or replacement of STD80N6F7?

All STD80N6F7 units undergo pre-shipment inspection (PSI). If there is an issue with STD80N6F7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD80N6F7 part is unused and in its original packaging.

Return procedure for STD80N6F7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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