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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD85N10F7AG

Name: STD85N10F7AG
Brand: STMicroelectronics
SKU: STD85N10F7AG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD85N10F7AG

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD85N10F7AG.pdf

Description:: MOSFET N-CH 100V 70A DPAK

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Product details

Overview

STD85N10F7AG from STMicroelectronics is an automotive-grade N-channel Power MOSFET with 100 V V_DS, 0.0085 Ω typ. R_DS(on) at V_GS = 10 V, 70 A continuous drain current, and DPAK (TO-252) package. It employs STripFET™ F7 trench technology for low conduction loss and fast switching, used in high-efficiency DC-DC converters and motor control stages in engine management systems.

For engineers reviewing the STD85N10F7AG datasheet, STD85N10F7AG pinout, STD85N10F7AG application, or STD85N10F7AG equivalent, key selection criteria include its AEC-Q101 qualification, 1.76 °C/W R_thj-case, 45 nC total gate charge, Crss/Ciss ratio of ~0.014 for EMI robustness, and unclamped inductive switching capability up to 280 A pulsed.

Technical Context

This MOSFET uses an enhanced trench-gate STripFET™ F7 structure that reduces both R_DS(on) and internal capacitances-C_iss = 3100 pF, C_rss = 45 pF-enabling high-frequency switching with low switching losses. Its low Crss/Ciss ratio improves immunity to voltage transients during hard commutation.

The device supports high-current operation with T_j max = 175 °C, R_thj-pcb = 50 °C/W, and avalanche-rated ruggedness. Safe operating area (SOA) is defined up to 10 ms single pulse at 100 V, supporting reliable operation under transient overload conditions in automotive power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Supports 48 V automotive battery systems with margin for load dump transients.
R_DS(on) typ.	0.0085 Ω at V_GS = 10 V, I_D = 40 A - Enables <1 W conduction loss at 40 A, critical for thermal management in compact modules.
I_D cont.	70 A at T_C = 25 °C - Delivers high power density in engine control units and EPS drivers.
Q_g	45 nC - Reduces gate drive power requirement and enables efficient operation with standard 10 V gate drivers.
C_rss/C_iss	45/3100 pF ≈ 0.014 - Minimizes Miller-induced shoot-through risk and improves EMI performance in noisy environments.
t_r/t_f	32 ns / 13 ns - Supports >500 kHz switching in synchronous buck converters without excessive switching loss.
E_AS	Not specified in provided data - Avalanche energy rating not published; SOA-limited operation requires external clamping.

Pinout & Package

DPAK (TO-252) package with exposed drain tab on underside for thermal conduction to PCB copper. Standard 3-pin configuration: Gate (pin 1), Drain (tab + pin 2), Source (pin 3). Mounting requires soldered tab to large copper pour for R_thj-pcb ≤ 50 °C/W.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	High-impedance control input; requires <45 nC charge for full enhancement; sensitive to ESD (±20 V absolute max).
Pin 2 & Tab	Drain	Main high-side power path; electrically connected to exposed metal tab - must be isolated from heatsink unless referenced to same potential.
Pin 3	Source	Power return node; referenced to gate drive ground; carries full load current and diode recovery current (I_RRM = 3.6 A).

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive underhood applications including temperature cycling, humidity, and mechanical shock per JESD47.
Low R_DS(on) × Q_g FoM	0.0085 Ω × 45 nC = 0.38 - Industry-leading figure of merit enabling high efficiency in 12–48 V power stages.
High avalanche ruggedness	Rated for unclamped inductive switching (UIS) with I_DM = 280 A pulse - supports robust operation in motor drive freewheeling paths.
Low Crss/Ciss ratio	45/3100 = 0.014 - Suppresses dv/dt-induced turn-on, reducing need for negative gate drive or active Miller clamp circuits.
Enhanced body diode	t_rr = 70 ns, Q_rr = 125 nC at T_j = 150 °C - Enables ZVS-compatible operation and reduces diode recovery loss in half-bridge topologies.

Applications

Engine Control Unit (ECU) Fuel Injector Driver

Electric Power Steering (EPS) H-Bridge Phase Leg

Use Scenario: High-speed, high-current switching of 12 V fuel injectors with PWM duty cycles up to 90% and peak currents ≥ 60 A.

IC Role / Device Role / Timing Role: Low-side switch controlling injector coil energization; operates in hard-switched mode at 1–10 kHz.

Use Value: 0.0085 Ω R_DS(on) limits resistive loss to <3 W at 60 A, enabling compact heatsinkless design within tight ECU space constraints.

Use Scenario: Bidirectional motor phase control in 12 V EPS systems requiring 70 A continuous current and 280 A short-circuit surge tolerance.

IC Role / Device Role / Timing Role: Upper/lower N-channel MOSFET in synchronous H-bridge; handles regenerative braking current via body diode.

Use Value: 70 ns t_rr and 125 nC Q_rr minimize diode recovery loss during polarity reversal, improving system efficiency by ~1.2% over legacy FETs.

48 V Mild Hybrid DC-DC Converter Primary Switch

Automotive HVAC Blower Motor Inverter

Use Scenario: Primary-side switch in 48 V–12 V bidirectional buck-boost converter handling up to 5 kW peak power.

IC Role / Device Role / Timing Role: High-frequency (200–300 kHz) hard-switched power switch with synchronous rectification support.

Use Value: 32 ns rise time and 13 ns fall time enable clean switching edges, reducing EMI filter size and meeting CISPR-25 Class 5 requirements.

Use Scenario: Low-voltage (12 V) blower motor in-cabin HVAC system requiring variable speed control and stall protection.

IC Role / Device Role / Timing Role: Half-bridge leg switch driving brushed DC motor; subjected to frequent stall and reverse EMF events.

Use Value: AEC-Q101 qualification and 175 °C T_j max ensure reliability across -40 °C to +125 °C ambient, even during prolonged stall conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF3205PbF	R_DS(on) = 0.008 Ω (typ), but Q_g = 71 nC and C_iss = 2400 pF; not AEC-Q101 qualified.	Lacks automotive qualification; higher gate charge increases driver loss and limits switching frequency.	Acceptable for industrial 12 V motor drives where qualification and EMI are non-critical.
IXTH86N10L2	R_DS(on) = 0.0095 Ω, Q_g = 42 nC, but TO-247 package; higher R_thj-case = 0.55 °C/W vs. 1.76 °C/W for DPAK.	Requires external heatsink; unsuitable for space-constrained PCB-mounted designs.	Preferred when maximum thermal dissipation (>100 W) is required and board real estate allows TO-247 mounting.

Compared with IRF3205PbF and IXTH86N10L2, STD85N10F7AG uniquely balances automotive qualification, ultra-low FoM, and surface-mount DPAK packaging-making it optimal for high-density, thermally constrained automotive power stages where qualification and EMI robustness are mandatory.

Availability

STD85N10F7AG is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and 48 V mild hybrid DC-DC converters requiring stable component supply across extended automotive lifecycles.

Supply support for STD85N10F7AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in automotive, industrial, and power management solutions with vertical manufacturing and AEC-Q100/101-compliant product lines.

STD85N10F7AG belongs to ST's STripFET™ F7 automotive power MOSFET family, engineered specifically for high-current, high-reliability switching in engine management, chassis, and electrification systems.

FAQ

Is STD85N10F7AG suitable for synchronous rectification in a 48 V–12 V DC-DC converter?

Yes. With R_DS(on) = 0.0085 Ω and Q_g = 45 nC, it supports efficient synchronous rectification at 200–300 kHz. Its low Crss/Ciss ratio minimizes cross-conduction risk, and the DPAK package enables direct PCB thermal coupling-critical for maintaining <100 °C junction temperature under 50 A RMS load.

What is the maximum allowable gate-source voltage during transient conditions?

The absolute maximum V_GS is ±20 V per datasheet Table 2. Operation beyond ±15 V risks permanent gate oxide damage. For robustness in automotive environments, gate drive should be clamped to ±12 V using Zener diodes, especially during load dump or cold crank events.

Does STD85N10F7AG have integrated ESD protection on the gate terminal?

No. The device lacks on-chip gate ESD protection. External 10 kΩ gate resistor and 12 V Zener clamp between gate and source are mandatory per ST application note AN4375 to prevent damage from human-body-model (HBM) discharges exceeding 2 kV.

Can STD85N10F7AG replace STD80N10F7 in existing designs?

Yes, with identical pinout, package, and qualification. STD85N10F7AG offers 7% lower R_DS(on) (0.0085 Ω vs. 0.0091 Ω) and improved SOA at high V_DS. No layout or drive circuit changes are needed, and thermal performance improves by ~0.5 °C/W at 60 A due to reduced conduction loss.

STD85N10F7AG Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 70A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 10mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3100 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 85W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD85N10F7AG FAQ

1.How can I place an order for STD85N10F7AG through Aetrix?

Please submit a Request for Quotation (RFQ) for STD85N10F7AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD85N10F7AG reliable?

The price and inventory of STD85N10F7AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD85N10F7AG is usually 5 days.

3.What payment methods are accepted for STD85N10F7AG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD85N10F7AG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD85N10F7AG?

STD85N10F7AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD85N10F7AG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD85N10F7AG?

For technical support, including STD85N10F7AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD85N10F7AG requirements.

6.How does Aetrix verify that STD85N10F7AG is sourced from the original manufacturer or authorized distributors?

All STD85N10F7AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD85N10F7AG meets industry standards.

7.What is the process for return or replacement of STD85N10F7AG?

All STD85N10F7AG units undergo pre-shipment inspection (PSI). If there is an issue with STD85N10F7AG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD85N10F7AG part is unused and in its original packaging.

Return procedure for STD85N10F7AG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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