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STMicroelectronics STD8N60DM2

Name: STD8N60DM2
Brand: STMicroelectronics
SKU: STD8N60DM2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD8N60DM2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD8N60DM2.pdf

Description:: MOSFET N-CH 600V 8A DPAK

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Product details

Overview

STD8N60DM2 from STMicroelectronics is a high-voltage N-channel Power MOSFET in the MDmesh DM2 series, featuring 600 V V_DS, 600 mΩ R_DS(on) max, 8 A continuous drain current at T_C = 25 °C, 85 W power dissipation, and fast-recovery body diode with 80 ns trr at 25 °C. It is engineered for high-efficiency bridge topologies and ZVS phase-shift converters.

For engineers reviewing the STD8N60DM2 datasheet, STD8N60DM2 pinout, STD8N60DM2 application, or STD8N60DM2 equivalent, key selection criteria include avalanche ruggedness (430 mJ E_AS), low Q_g (13.5 nC), dv/dt immunity (50 V/ns), and Zener-protected gate-critical for hard-switching SMPS and resonant converter designs.

Technical Context

This device employs ST's MDmesh DM2 silicon process optimized for high-voltage switching with integrated fast-recovery body diode. Its low Q_rr (188 nC typ. at 25 °C) and tight trr distribution (80–160 ns across temperature) minimize commutation losses in synchronous rectification and LLC resonant stages.

The MOSFET delivers stable R_DS(on) (550 mΩ typ.) up to 100 °C junction temperature and maintains 50 V/ns dv/dt ruggedness under unclamped inductive switching-verified by 100% avalanche testing per I_AR = 2.5 A and E_AS = 430 mJ conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports primary-side switching in 400 V DC bus and 3-phase rectified applications without derating.
R_DS(on) max	600 mΩ - enables low conduction loss at 8 A ID, critical for <100 W–500 W high-density AC/DC adapters.
Q_g	13.5 nC - reduces gate drive power and allows use of low-power drivers in isolated flyback controllers.
trr	80 ns (T_j = 25 °C) - limits reverse recovery tail current, suppressing voltage overshoot in half-bridge freewheeling paths.
E_AS	430 mJ - ensures robustness against single-pulse inductive energy spikes in PFC and motor drive snubbers.
dv/dt ruggedness	50 V/ns - sustains reliable operation during fast voltage transients in high-frequency ZVS circuits.
Thermal R_thJC	1.47 °C/W - enables 85 W dissipation with ≤125 °C case rise above ambient when mounted on 1-in² 2 oz Cu PCB.

Pinout & Package

DPAK (TO-252) package with exposed drain tab for thermal and electrical connection; thermally enhanced plastic surface-mount outline compliant with JEDEC MO-238.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal requiring ≤±25 V bias; low C_iss (449 pF) minimizes Miller effect in high-dV/dt environments.
2 (TAB/D)	Drain (exposed tab)	Main high-voltage power path; tab must be soldered to large copper pour for thermal management and low-inductance return.
3 (S)	Source	Reference node for gate drive and current sensing; connects to low-side switch node or shunt resistor ground reference.

Key Features

Feature	Design Value
Fast-recovery body diode	trr = 80 ns @ 25 °C, Q_rr = 188 nC - eliminates need for external anti-parallel SiC Schottky in medium-frequency LLC sync rectifiers.
Extremely low gate charge	Q_g = 13.5 nC - cuts gate driver losses by >40% vs. legacy 600 V MOSFETs, enabling higher PWM frequencies up to 500 kHz.
Zener-protected gate	Integrated 25 V gate oxide protection - prevents ESD-induced failure during board assembly and in-system hot-plug events.
100% avalanche tested	E_AS = 430 mJ, I_AR = 2.5 A - guarantees single-pulse survivability in unclamped inductive turn-off, e.g., PFC boost choke discharge.
High dv/dt ruggedness	50 V/ns rated - avoids false turn-on in high-side configurations with rapid bus transients, eliminating need for negative gate bias.

Applications

Server PSU Primary Switch

Industrial PLC Output Stage

Use Scenario: High-efficiency 80 PLUS Titanium server power supply operating at 300–500 kHz with active clamp forward or phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 400 V DC input; synchronized with ZVS control to minimize switching loss.

Use Value: Low Q_rr and fast trr reduce dead-time losses and enable tighter timing margins, improving efficiency by ≥0.4% at full load.

Use Scenario: Solid-state relay output stage in programmable logic controller driving 24 V DC solenoids and indicator loads with frequent on/off cycling.

IC Role / Device Role / Timing Role: Low-side load switch with integrated body diode clamping inductive kickback during de-energization.

Use Value: Zener-protected gate and 100% avalanche rating ensure long-term reliability under repetitive 100 V inductive spikes without external TVS.

EV Onboard Charger PFC

Medical Imaging Power Module

Use Scenario: Boost PFC stage in 6.6 kW EV onboard charger converting 230 V AC to 400 V DC, operating at 65–100 kHz.

IC Role / Device Role / Timing Role: Fast-switching boost switch with body diode conducting during zero-current intervals in discontinuous conduction mode.

Use Value: 600 mΩ R_DS(on) and 550 mΩ typ. reduce conduction loss at 15 A peak, while low C_oss (24 pF) minimizes capacitive turn-on loss.

Use Scenario: Isolated high-voltage DC-DC module powering X-ray detector bias rails in portable imaging systems requiring ultra-low EMI.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in resonant LLC converter, replacing Schottky diodes to cut forward drop and heat.

Use Value: Body diode V_SD = 1.6 V @ 8 A and 80 ns trr suppress ringing and conducted noise, meeting CISPR-11 Class B limits without added filtering.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP8N60DM2	TO-220 package, identical die and electrical specs; R_thJC = 1.25 °C/W vs. DPAK's 1.47 °C/W.	Better thermal performance but larger footprint; unsuitable for space-constrained SMT-only designs.	Select when board-level heatsinking is available and manual assembly is acceptable.
FDPF6N60NZ	600 V, 650 mΩ R_DS(on), 16.5 nC Q_g, no integrated Zener gate protection.	Higher gate charge increases driver loss; lacks avalanche certification and body diode optimization.	Acceptable only in cost-sensitive non-critical applications where EMI and reliability margins are relaxed.

Compared with STP8N60DM2, STD8N60DM2 trades 0.22 °C/W higher junction-to-case resistance for surface-mount compatibility and automated assembly; versus FDPF6N60NZ, it delivers verified avalanche robustness, lower Q_g, and faster trr-directly enabling higher efficiency and smaller magnetics in regulated SMPS.

Availability

STD8N60DM2 is available at Aetrix Electronics and suitable for server power supplies, industrial PLC outputs, EV onboard chargers, and medical imaging power modules requiring stable component supply, consistent parametric performance, and long-term lifecycle support.

Supply support for STD8N60DM2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to the MDmesh DM2 high-voltage Power MOSFET product line, developed specifically for high-efficiency, high-frequency switched-mode power supplies demanding low Q_rr, rugged dv/dt behavior, and integrated gate protection.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STD8N60DM2 supports 5 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS11054 Rev 5. This derating reflects thermal limitations of the DPAK package and ensures safe operation within SOA boundaries at elevated temperatures.

Does this MOSFET require an external gate resistor for stability in hard-switching applications?

A gate resistor of 4.7 Ω is used in the official switching time test circuit (Figure 13), confirming stable turn-on/turn-off behavior without oscillation. While not mandatory, a 4.7–10 Ω resistor is recommended to dampen ringing caused by PCB trace inductance and gate driver output impedance.

Is the body diode suitable for synchronous rectification in LLC resonant converters?

Yes-the body diode exhibits 80 ns trr at 25 °C and 160 ns at 150 °C, with low Q_rr (188–640 nC) and soft recovery characteristics. These traits are validated in LLC half-bridge evaluation boards using MDmesh DM2 devices, enabling efficient synchronous rectification without external diodes.

What is the meaning of "Zener-protected" in the gate specification?

Zener protection refers to an integrated gate-source Zener diode rated for ±25 V, clamping transient overvoltage before oxide breakdown. This feature eliminates the need for external gate protection components in applications subject to ESD or inductive coupling, such as motor drives and industrial I/O modules.

STD8N60DM2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ DM2

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 4A, 10V

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 13.5 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 375 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 85W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD8N60DM2 FAQ

1.How can I place an order for STD8N60DM2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD8N60DM2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD8N60DM2 reliable?

The price and inventory of STD8N60DM2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD8N60DM2 is usually 5 days.

3.What payment methods are accepted for STD8N60DM2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD8N60DM2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD8N60DM2?

STD8N60DM2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD8N60DM2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD8N60DM2?

For technical support, including STD8N60DM2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD8N60DM2 requirements.

6.How does Aetrix verify that STD8N60DM2 is sourced from the original manufacturer or authorized distributors?

All STD8N60DM2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD8N60DM2 meets industry standards.

7.What is the process for return or replacement of STD8N60DM2?

All STD8N60DM2 units undergo pre-shipment inspection (PSI). If there is an issue with STD8N60DM2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD8N60DM2 part is unused and in its original packaging.

Return procedure for STD8N60DM2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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