STMicroelectronics STD8N65M5
- Part No.:
- STD8N65M5
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
STD8N65M5.pdf
- Description:
- MOSFET N-CH 650V 7A DPAK
- Quantity:
- Payment:

- Shipping:

Inventory:4,523
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Product details
Overview
STD8N65M5 from STMicroelectronics is an N-channel 650 V, 560 mΩ typ. (600 mΩ max.) MDmesh™ M5 Power MOSFET in DPAK (TO-252) package, rated for 7 A continuous drain current at TC = 25 °C and 70 W total power dissipation. It features 15 nC total gate charge, 690 pF input capacitance, and 100% avalanche-tested ruggedness-designed for high-efficiency AC-DC adapters and offline SMPS primary-side switching.
For engineers reviewing the STD8N65M5 datasheet, STD8N65M5 pinout, STD8N65M5 application, or STD8N65M5 equivalent, key selection criteria include its 650 V V(BR)DSS, low RDS(on) at 10 V gate drive, fast 200 ns diode reverse recovery time, and thermal resistance of 5.0 °C/W (junction-to-case), critical for compact high-voltage flyback and PFC designs.
Technical Context
This device employs ST's MDmesh M5 vertical superjunction process combined with PowerMESH horizontal layout to achieve ultra-low on-resistance while maintaining high voltage blocking capability. Its optimized charge characteristics-including 3.6 nC gate-source charge and 6 nC gate-drain charge-enable high-frequency operation up to 100 kHz in hard-switched topologies.
The integrated body diode exhibits 1.5 V forward voltage at 7 A and 200 ns reverse recovery time (TJ = 25 °C), supporting quasi-resonant and valley-switching control schemes. The 15 V/ns dv/dt immunity ensures robust operation during fast voltage transients in noisy industrial environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 650 V - Sustains full mains voltage surges in 230 VAC systems without breakdown. |
| RDS(on) max | 600 mΩ @ VGS = 10 V, ID = 3.5 A - Enables <1.5 W conduction loss at 7 A in continuous conduction mode. |
| ID cont @ TC = 25 °C | 7 A - Supports ≥60 W output power in single-transistor flyback converters with adequate heatsinking. |
| Qg | 15 nC - Reduces gate driver power requirement and enables efficient 65–100 kHz switching in compact adapters. |
| trr | 200 ns @ ISD = 7 A, di/dt = 100 A/µs - Limits switching losses and EMI during diode commutation in QR controllers. |
| RthJC | 5.0 °C/W - Allows direct mounting to PCB copper pour or small heatsink for thermal management in space-constrained designs. |
| EAS | 120 mJ - Withstands unclamped inductive switching events without failure in PFC boost stages. |
Pinout & Package
DPAK (TO-252) package: surface-mount, 3-terminal outline with exposed drain tab for thermal and electrical connection. Standard footprint per Figure 28 (DS6548 Rev 7, page 18).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | High-impedance control terminal requiring ≤10 V drive; low 2–8 Ω gate resistance minimizes ringing. |
| 2 (D / TAB) | Drain (exposed metal tab) | Main high-voltage power path; electrically and thermally connected to PCB copper pour for heat dissipation. |
| 3 (S) | Source | Reference node for gate drive and current sensing; ties to primary ground in flyback topologies. |
Key Features
| Feature | Design Value |
|---|---|
| MDmesh M5 superjunction technology | Delivers 560 mΩ typ. RDS(on) at 650 V rating-enabling >90% efficiency in 65 W adapter reference designs. |
| 100% avalanche tested | Guarantees single-pulse avalanche energy handling up to 120 mJ-eliminates need for external snubbers in cost-sensitive PFC stages. |
| Low Qgd/Qg ratio (0.4) | Improves Miller immunity and enables stable operation with minimal gate resistor value in high-dV/dt environments. |
| Fast body diode (trr = 200 ns) | Reduces turn-on losses in quasi-resonant controllers by minimizing dead-time conduction loss and EMI generation. |
| ECOPACK® compliant | Meets RoHS and halogen-free requirements without derating-qualified for industrial and consumer-grade production. |
Applications
| AC-DC Adapter Primary Switch | Industrial Flyback PSU |
|---|---|
|
Use Scenario: 45–65 W universal-input offline adapter for laptops and monitors. IC Role / Device Role / Timing Role: Primary-side high-voltage switch in discontinuous conduction mode (DCM) flyback converter. Use Value: 600 mΩ RDS(on) and 15 nC Qg enable >89% average efficiency across 90–264 VAC input range at full load. |
Use Scenario: 30–50 W isolated auxiliary supply in PLC backplanes and motor drives. IC Role / Device Role / Timing Role: Main switching element in ruggedized flyback topology operating at 65 kHz with wide ambient temperature range. Use Value: 150 °C max junction temperature rating and 5.0 °C/W RthJC support reliable operation without forced air cooling in sealed enclosures. |
| LED Driver PFC Stage | Server PSU Hold-up Circuit |
|
Use Scenario: Active boost PFC front-end for 100 W outdoor LED streetlight drivers. IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM) PFC controller with 50 kHz switching frequency. Use Value: 120 mJ EAS withstands line surge events per IEC 61000-4-5, eliminating need for redundant clamping components. |
Use Scenario: High-reliability hold-up capacitor charging switch in 1U server PSUs during brownout conditions. IC Role / Device Role / Timing Role: Controlled high-voltage switch enabling soft-start and overvoltage protection in DC-DC intermediate bus stage. Use Value: 650 V V(BR)DSS and 1 µA IDSS ensure stable biasing and leakage control under 400 V DC bus stress for >10-year field life. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STB8N65M5 | D²PAK package; lower RthJC = 1.79 °C/W; same die, higher thermal performance. | Better suited for higher-power (>80 W) or convection-cooled designs where PCB real estate allows larger footprint. | Select when thermal margin is constrained and board space permits D²PAK mounting. |
| STF8N65M5 | TO-220FP package; RthJC = 1.79 °C/W but requires insulated mounting; 25 W PTOT rating. | Used in legacy through-hole designs or where mechanical robustness and serviceability outweigh surface-mount density. | Choose for repairable industrial equipment or when existing TO-220FP footprints must be retained. |
Compared with STB8N65M5 and STF8N65M5, STD8N65M5 offers optimal balance of thermal performance (5.0 °C/W), compact DPAK footprint, and 70 W power handling-making it the preferred choice for space-limited, mid-power SMPS where automated assembly and thermal pad integration are required.
Availability
STD8N65M5 is available at Aetrix Electronics and suitable for AC-DC adapters, industrial flyback PSUs, and LED driver PFC stages requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.
Supply support for STD8N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.
STD8N65M5 belongs to ST's MDmesh™ M5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-density offline power conversion in energy-efficient adapters, lighting, and industrial power supplies.
FAQ
What is the maximum recommended gate drive voltage for STD8N65M5?
The absolute maximum gate-source voltage is ±25 V, but ST specifies optimal switching performance at VGS = 10 V. Driving above 13 V yields diminishing RDS(on) improvement while increasing gate oxide stress risk. For reliability in industrial applications, 10–12 V gate drive with active clamping is recommended.
Can STD8N65M5 replace older STP8N65M5 in existing designs?
No-STP8N65M5 uses TO-220 package and different thermal characteristics (RthJC = 1.5 °C/W, PTOT = 125 W). STD8N65M5 has DPAK packaging, 5.0 °C/W RthJC, and 70 W rating. Direct replacement requires PCB layout revision, thermal analysis, and validation of peak current capability (IDM = 28 A vs. STP8N65M5's 32 A).
Is the body diode suitable for synchronous rectification?
No-the body diode is not optimized for synchronous rectification. Its 1.5 V forward voltage and 200 ns trr result in higher conduction and switching losses versus dedicated SR MOSFETs. It is intended for freewheeling and clamping in primary-side switching, not secondary-side rectification.
Does STD8N65M5 require a gate resistor for EMI suppression?
Yes-a 4.7 Ω gate resistor is specified in the datasheet for switching time characterization (Table 6). This value balances dv/dt control (limiting EMI) and switching loss. Lower values (<2.2 Ω) increase ringing and radiated emissions; higher values (>10 Ω) degrade efficiency and thermal performance at high frequencies.
STD8N65M5 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ V
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 600mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 690 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 70W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
STD8N65M5 FAQ
1.How can I place an order for STD8N65M5 through Aetrix?
Please submit a Request for Quotation (RFQ) for STD8N65M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STD8N65M5 reliable?
The price and inventory of STD8N65M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD8N65M5 is usually 5 days.
3.What payment methods are accepted for STD8N65M5?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD8N65M5 transactions.
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4.How is shipping managed for STD8N65M5?
STD8N65M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STD8N65M5 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STD8N65M5?
For technical support, including STD8N65M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD8N65M5 requirements.
6.How does Aetrix verify that STD8N65M5 is sourced from the original manufacturer or authorized distributors?
All STD8N65M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD8N65M5 meets industry standards.
7.What is the process for return or replacement of STD8N65M5?
All STD8N65M5 units undergo pre-shipment inspection (PSI). If there is an issue with STD8N65M5, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STD8N65M5 part is unused and in its original packaging.
Return procedure for STD8N65M5:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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