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STMicroelectronics STD8NM50N
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- Part No.:
- STD8NM50N
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
STD8NM50N.pdf
- Description:
- MOSFET N-CH 500V 5A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:3,272
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Product details
Overview
STD8NM50N from STMicroelectronics is an N-channel 500 V, 5 A Power MOSFET in DPAK (TO-252) package, featuring 0.79 Ω max RDS(on) at VGS = 10 V, 14 nC total gate charge, and 100% avalanche tested performance - deployed in high-efficiency AC-DC flyback and PFC converters.
For engineers reviewing the STD8NM50N datasheet, STD8NM50N pinout, STD8NM50N application, or STD8NM50N equivalent, key selection criteria include its MDmesh™ II vertical structure enabling low conduction and switching losses, thermal resistance of 2.78 °C/W (j-case), and robust 140 mJ single-pulse avalanche energy rating.
Technical Context
This device uses ST's second-generation MDmesh™ technology, combining a vertical power structure with strip layout to minimize RDS(on) and gate charge simultaneously. Its 364 pF input capacitance and 5.4 Ω intrinsic gate resistance support fast, controlled switching in hard-switched topologies.
The integrated body diode delivers 187 ns reverse recovery time at 5 A/100 A/µs, with 1.5 µC Qrr at Tj = 150 °C - enabling reliable operation in discontinuous conduction mode (DCM) and quasi-resonant (QR) SMPS designs without external snubbing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 500 V - supports 400 VAC mains-input designs with ≥20% safety margin against voltage transients |
| RDS(on) max | 0.79 Ω @ VGS = 10 V - enables <1.5 W conduction loss at 5 A continuous drain current |
| Qg | 14 nC - reduces gate drive power requirement and allows use of low-power controllers like L6565 |
| EAS | 140 mJ - ensures ruggedness under unclamped inductive switching in PFC boost stages |
| Rth(j-case) | 2.78 °C/W - permits 45 W dissipation at 25 °C case temperature, supporting compact heatsink design |
| Ciss | 364 pF - balances switching speed and EMI control in 65–100 kHz SMPS applications |
| ID (Tc = 100 °C) | 3 A - defines usable current derating for sealed enclosures or high ambient environments |
Pinout & Package
DPAK (TO-252) package with exposed drain tab (Pin 2) for thermal and electrical connection; surface-mount footprint optimized for FR-4 PCBs with 1 inch² 2 oz copper pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D (Tab, Pin 2) | Drain | High-voltage power node; electrically and thermally connected to PCB copper pour for heat dissipation |
| G (Pin 1) | Gate | Control terminal requiring <5.4 Ω series resistance to damp ringing during fast switching |
| S (Pin 3) | Source | Reference node for gate drive; connects to power ground plane with low-inductance path |
Key Features
| Feature | Design Value |
|---|---|
| MDmesh™ II vertical structure | Reduces RDS(on) × Qg figure-of-merit by >30% vs. planar MOSFETs, improving efficiency in 65–130 kHz converters |
| 100% avalanche rated | Guarantees operation under transient overvoltage conditions without parameter shift or failure |
| Low Coss eq. (147.5 pF) | Minimizes turn-off energy loss and improves light-load efficiency in QR flyback topologies |
| Fast body diode (trr = 187 ns) | Reduces switching loss and EMI in DCM PFC, eliminating need for external ultrafast diode |
| ECOPACK® compliant | Meets RoHS and halogen-free requirements for industrial and consumer power supplies |
Applications
| AC-DC Adapter | PFC Boost Converter |
|---|---|
Use Scenario: 36 W universal-input offline adapter with QR flyback topology. IC Role / Device Role: Primary-side high-voltage switch handling 500 V blocking and 5 A peak current. Use Value: Low Qg and RDS(on) reduce no-load consumption to <75 mW and improve full-load efficiency to >88%. |
Use Scenario: Active boost PFC stage in 150 W LED driver. IC Role / Device Role: Switching element in continuous conduction mode (CCM) boost converter operating at 65 kHz. Use Value: Avalanche ruggedness and low Coss enable stable operation under line surges and reduce thermal stress on heatsink. |
| Industrial SMPS | Server PSU Front-End |
Use Scenario: 200 W isolated DC-DC converter for PLC I/O modules. IC Role / Device Role: Main switch in half-bridge configuration driving resonant LLC tank. Use Value: Tight RDS(on) distribution (0.73 Ω typ.) ensures balanced current sharing between paralleled devices. |
Use Scenario: Hold-up capacitor charging circuit in 80 PLUS Titanium server PSU. IC Role / Device Role: High-side switch controlling bulk capacitor pre-charge sequence. Use Value: 20 A pulsed drain current rating supports inrush limiting without external current sense. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 500 V Power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP8NM50N | Same die, TO-220 package; Rth(j-case) = 2.78 °C/W identical, but higher Rth(j-amb) (62.5 vs. 50 °C/W on PCB) | Preferred for prototyping or low-volume through-hole assembly; less suitable for dense SMT layouts | Select when manual soldering, heatsink mounting, or legacy board compatibility is required |
| IPP60R099C6 | 600 V, 0.099 Ω RDS(on), 33 nC Qg; CoolMOS™ C6 technology, higher voltage margin but larger gate drive demand | Better suited for 480 VAC industrial systems; requires stronger gate driver due to higher Qg | Choose only if 600 V rating is mandatory and system can accommodate increased drive loss |
Compared with STP8NM50N, STD8NM50N offers superior PCB thermal coupling and smaller footprint; versus IPP60R099C6, it trades voltage headroom for lower gate drive burden and proven cost-effective performance in 400 VAC designs.
Availability
STD8NM50N is available at Aetrix Electronics and suitable for AC-DC adapters, PFC boost converters, and industrial SMPS requiring stable component supply and long-term production continuity.
Supply support for STD8NM50N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.
STD8NM50N belongs to ST's MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching power supplies where low RDS(on) × Qg and avalanche robustness are critical.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
The STD8NM50N supports 3 A continuous drain current when the case temperature is maintained at 100 °C, as specified in Table 1 of DS6808 Rev 7. This derating reflects thermal limits of the DPAK package and ensures safe operation within the SOA boundary at elevated temperatures.
Does this MOSFET require a gate resistor for stability?
Yes - a 5–10 Ω gate resistor is recommended to damp high-frequency oscillation caused by interaction between the 5.4 Ω intrinsic gate resistance and PCB parasitic inductance. Layout best practices include minimizing gate loop area and using Kelvin source connection for critical applications.
Is the body diode suitable for synchronous rectification?
No - the body diode is optimized for freewheeling in PFC and flyback topologies, not synchronous rectification. Its 1.5 V forward voltage and 187 ns trr exceed typical SR FET requirements; dedicated low-VF MOSFETs or Schottky diodes are preferred for secondary-side rectification.
Can STD8NM50N replace STP8NM50N in existing designs?
Yes, with PCB layout adaptation: both share identical electrical specs and die, but STD8NM50N uses DPAK (surface-mount) while STP8NM50N uses TO-220 (through-hole). Thermal performance is comparable when the DPAK tab is properly soldered to a 1-inch² 2 oz copper pad per DS6808 Section 4.2.
STD8NM50N Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ II
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 790mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 364 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 45W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
STD8NM50N FAQ
1.How can I place an order for STD8NM50N through Aetrix?
Please submit a Request for Quotation (RFQ) for STD8NM50N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STD8NM50N reliable?
The price and inventory of STD8NM50N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD8NM50N is usually 5 days.
3.What payment methods are accepted for STD8NM50N?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD8NM50N transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STD8NM50N?
STD8NM50N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STD8NM50N order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STD8NM50N?
For technical support, including STD8NM50N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD8NM50N requirements.
6.How does Aetrix verify that STD8NM50N is sourced from the original manufacturer or authorized distributors?
All STD8NM50N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD8NM50N meets industry standards.
7.What is the process for return or replacement of STD8NM50N?
All STD8NM50N units undergo pre-shipment inspection (PSI). If there is an issue with STD8NM50N, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STD8NM50N part is unused and in its original packaging.
Return procedure for STD8NM50N:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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