STMicroelectronics STD90N4F3

Overview

STD90N4F3 from STMicroelectronics is an N-channel 40 V, 5.0 mΩ (typ), 80 A continuous drain current, DPAK-packaged STripFET™ III Power MOSFET designed for high-efficiency switching applications. It features standard gate threshold drive (2–4 V), 100% avalanche tested ruggedness, and low R_DS(on) optimized for power conversion stages in DC-DC converters and motor drives.

For engineers reviewing the STD90N4F3 datasheet, STD90N4F3 pinout, STD90N4F3 application, or STD90N4F3 equivalent, key selection criteria include its 40 V V_DSS, 5.0 mΩ on-resistance at V_GS = 10 V/ID = 40 A, 110 W total dissipation, 8 V/ns dv/dt capability, and DPAK thermal resistance of 1.36 °C/W (junction-to-case).

Technical Context

This MOSFET employs STripFET™ III technology to minimize conduction loss while maintaining fast switching performance. Its 100% avalanche-tested construction ensures robustness under unclamped inductive load conditions, with EAS = 400 mJ at T_j = 25 °C, ID = 40 A, V_DD = 30 V.

Dynamic parameters include Q_g = 54 nC, Q_gd = 8 nC, and C_iss = 2200 pF at V_DS = 25 V - enabling efficient gate driving with moderate external R_G (e.g., 4.7 Ω). The source-drain diode supports synchronous rectification with t_rr = 45 ns and Q_rr = 60 nC under specified test conditions.

Key Specifications

Pinout & Package

DPAK (TO-252) package: surface-mount, 3-terminal, single-die power MOSFET with exposed drain pad for thermal conduction. Standard pin assignment: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRF3205PbF, STD90N4F3 delivers 38% lower R_DS(on) and superior thermal performance in SMT form; versus STP90N4F3, it offers identical electrical behavior in a smaller, reflow-solderable DPAK package - critical for high-density power modules.

Availability

STD90N4F3 is available at Aetrix Electronics and suitable for DC-DC converters, BLDC motor inverters, and automotive body control modules requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STD90N4F3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power, analog, MEMS, and microcontroller technologies for industrial, automotive, and consumer markets.

STD90N4F3 belongs to the STripFET™ III Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in medium-power applications up to 1 kW - emphasizing low R_DS(on), fast switching, and rugged avalanche performance.

FAQ

What is the maximum gate-source voltage rating for STD90N4F3?

The absolute maximum V_GS is ±20 V. Exceeding this risks permanent gate oxide damage. For reliable operation, gate drive should be limited to –10 V to +15 V, with typical logic-level drive at 0 V (off) and 10 V (on) - compatible with standard 3.3 V or 5 V microcontrollers via appropriate level shifting if needed.

Can STD90N4F3 be used in synchronous rectification topologies?

Yes - its integrated source-drain diode has t_rr = 45 ns and Q_rr = 60 nC at T_j = 150 °C, enabling efficient synchronous rectification in LLC and phase-shifted full-bridge converters. However, external Schottky diodes may still be preferred in ultra-high-frequency (>1 MHz) designs due to lower Q_rr and forward voltage.

What is the thermal resistance from junction to ambient for STD90N4F3 in standard PCB layout?

R_thj-a is 50 °C/W when mounted on a 1-inch² FR-4 board with 2 oz copper. This value assumes full soldering of the exposed drain pad to a thermal plane. Without proper thermal land design, R_thj-a degrades to 100 °C/W - making thermal pad layout critical for achieving rated 80 A current capability.

Is STD90N4F3 suitable for automotive applications?

STD90N4F3 is not AEC-Q101 qualified and is not recommended for safety-critical automotive functions. However, it is commonly used in non-safety automotive subsystems such as interior lighting, seat controls, and auxiliary pumps - provided system-level validation confirms compliance with temperature, vibration, and EMC requirements per ISO 16750.